TG 988 Search Results

tg9e

Abstract: tg 988
Contextual Info: 64*-4 >@097:7/?@=3 6756 <;B3= =38/C 4GDQROGP Jeha Qk6BI9;<=9? , , , , Vi]hh ]j` bkn ie_nks]ra kraj :8E osep_dejc _]l]^ehepu 96=LS :=8YEG ]llnkra` ^u XO op]j`]n` =gY eilqhoa sepdop]j` rkhp]ca 2^apsaaj _keh ]j` _kjp]_po3 , SGF 1 TG h]ukqpo , Ijrenkjiajp]h bneaj`hu lnk`q_p 2UkLV _kilhe]jp3

0,22 j 160 tgl 55163

Abstract: VEB M ik ro e le k tro n ik Scans-048 TGL-200 asterm DSAGER0002 DSAGER00027 TGL 200
Contextual Info: ondensatoren T s c CD c~ t CD c T O Q _ CD Program m übersicht K a p a z itä ts b e re ic h B a u fo rm Typ/TG L 3300 1000 330 1000 38 159 pF - 0,1 //F p F - 0 ,1 f jf pF - 0,022 ,F p F - 0 , 0 2 2 ,F Spannungsre ih e T o le ra n z P rü fkla sse A n w e n d u n g s k la s s e

3M 9890

Abstract: 9885 7007-048
Contextual Info: 162873 9890 4/19/99 12:54 PM Page 1 (Process Black plate) 3 Technical Bulletin TM System Design and Performance for 3M Thermally Conductive Tapes 9882, 9885, 9890 April, 1999 Notes on System Design and Performance This publication is intended to aid the user in optimizing the design and performance

TC-2707

Abstract: DP190 5589H Outgassing
Contextual Info: Technical Data January, 2010 3M Thermally Conductive Epoxy Adhesive TC-2707 Product Description 3M™ Thermally Conductive Epoxy Adhesive TC-2707 is an aluminum metal filled, two-part, thermally conductive epoxy adhesive. Key Features • Improved thermal conductivity.

DP460

Abstract: D1876 epoxy thinner Outgassing 5589H Outgass DP-460 ADHESIVE GAP PAD TC2810+37ML
Contextual Info: Technical Data January, 2010 3M Thermally Conductive Epoxy Adhesive TC-2810 Product Description 3M™ Thermally Conductive Epoxy Adhesive TC-2810 is a boron nitride filled, two-part, thermally conductive epoxy adhesive. Key Features • Improved thermal conductivity.

hp dv5 schematic diagram free

Abstract: schematic hp dv7 hp dv5 U804 u806 HOLTEK MICROELECTRONICS RTC001 U807 D ECHO schematic diagrams n117
Contextual Info: Workview Design Kit User's Manual July 1998 Version 1.00 Preliminary Holtek Microelectronics Inc. TABLE OF CONTENT Chapter 1. Introduction Chapter 2. Installation Chapter 3. Before you start Chapter 4. Viewdraw – Workview schematic capture tool Chapter 5.

490.2159

Abstract: Kombinat VEB Elektronische Bauelemente VEB Kombinat 49004 veb taschenbuch Kombinat VEB asterm Bauelementeinformation VEB M ik ro e le k tro n ik bauelemente Kombinat
Contextual Info: Widerstände Kombinat VEB Elektronische Bauelemente W ID E R S T Ä N D E In h a lt Feste S ch ic h tw id e rstä n d e Seite 6 V e r ä n d e rb a re S ch ich tw id e rstä n d e 50 Ein ste ilre g ier Kohleschicht Ein ste ilre g ler (Cerm etschicht) Potentiometer

tm 1628 smd

Abstract: AN598 78610 3002 ic equivalent cte table epoxy IC 3004 200B hear HEINEMANN
Contextual Info: AN598 Plastic Packaging and the Effects of Surface Mount Soldering Techniques Author: John Barber Surface Mount Technology Team PURPOSE This application note is intended to inform and assist the customers of Microchip Technology Inc. with Surface Mount Devices SMD’s . The process of

N458

Abstract: 8e89 C887 6ba9 G4EG 74G4 HC74G 0WQ1 A68g
Contextual Info: `echlmjmgr fmn hpkal beilg ald elqinmlkelo MK?J F;GM;E IJHAJ;FF;<E? FHLCHG =HGLJHEE?J 4d51;PCK BCAB KI?> KL;G>1;EHG? K?JC?K 6d748\RY =RPQ FWNNM @VZRVU 9VUZXVSSNX 2C@946=F5C@947=F3 -C_ W^ [\_W[ZRX2. 9 IF=1BK FRWZ VUR_`]U^ : g48G@EJH 8B>EG@I?CH 9N I?< :EC9@D8I@ED E= pq :ECC8D;H

TGC100

Abstract: TGC103
Contextual Info: 0 ^1723 7 ~ 4 Z -!/-O Y TGC100 SERIES 1-/tm CMOS GATE ARRAYS It u s ^32 DD7ÔD31 D 3 0 1 5 , OCTOBER 1 9 8 7 -R E V IS E D OCTOBER 1 98 8 Six Arrays with Up to 16,758 Useable Gates AC PERFORMANCE TEST STRUCTURE CELL COLUMN W |R|NQ CHANNEL Fast Prototype Turn-Around Time

2SA1610

Abstract: l 0734 2SC4176 L0734 846 B34 t460 transistor
Contextual Info: SEC '> • ; = ] > l * 7 > Silicon Transistor lÏ T / \ f 7 2SC4176 « it : mm O X - i -y •f- > ? " i Î ) £ * i i â v > c, O 1 ? 2.1+0.1 ;7 tâ fP 1 iC rE * i ' j ' ? 1.25 ±0.1 O ÎIJ Îf ^ lp If i^ ë ^ o o 2SA 1610 £ 3 > 7 ° I) / > ? U tM È ffl-ü ë i t o

ic str wg 252

Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

Contextual Info: jC T jr c RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS, RURD620CCS semiconductor July 1996 File Number 4075.1 6A, 100V - 200V Ultrafast Dual Diodes Features RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS and RURD620CCS are ultrafast dual diodes

Contextual Info: COM’L: -12/15/20,0-20/25 Advanced Micro Devices MACH435-12/15/20, Q-20/25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Flexible clocking ■ 128 Macrocells — Four global clock pins with selectable edges ■

Contextual Info: RICOH CORP/ ELECTRONIC S4E ]> 7744b=}0 0 0 ü n b 3 T04 H P C H T - 7 1 - ¡ 7 -0 ! I t O « RF5C86 EK-Ol 9-8811 PWM GENERATOR Ricoh’s RF5C86 is an integrated circuit IC for generating pulse width modulation (PWM) signals. It has eight output channels. The pulse cycle, pulse high width, and output mode can be set. The

AC16F

Abstract: triac t 444 AC16DGM AC16EGM AC16FGM H150
Contextual Info: Thyristors AC16DGM,AC16EGM,AC16FGM 16 AC16r A "E — ;U K T R IA C A v~ 6oo K T R IA C T ”, v ^ •3 fé ^ K # ÌÌ t t 0 10.5 MAX. ft $ o T O -22OAB Y — X c o tz tö 'M m s T k f fä M i- ic o 0 i t , i tzM M 0 3.6 4.8 M A X . W- Kä* ' 1.4 1.4 fé'ê-ffi.JSTj = 125 “C -X s'h >) M M s f CO g È J t ^ 'ï S t^o

IRFM014

Abstract: DIODE 27A IRFM010 250M
Contextual Info: N-CHANNEL POWER MOSFETS IRFM014/10 FEATURES • Lower Rds on • Improved inductive ruggedness • Fast switching times •Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

TGS 2600

Abstract: NW1068 CN-7 NW1068-XQ
Contextual Info: NW1068 Programmable Octal PCM CODEC Preliminary Data Sheet October, 2000 Ver 2.0

P29A

Abstract: tip29 equivalent TIP29 RCA
Contextual Info: TIP29, TIP29A, TIP29B, TIP29C File Number 990 Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications Features: • 30 W at 25° C case temperature ■ 3 A rated collector current ■ Min. h o f 3 MHZ at 10 V, 200 mA

Contextual Info: on isvxrs ' j '3 006271 GaAs DIGITAL 1C Single UPG704B-15 UPG704B-20 UPG704B-25 Copy TENTATIVE DATA SHEET Handle With Care 4:1 Multiplexer FEATURES PHYSICAL DIMENSIONS • ECL C O M P A T IB L E • U L T R A H IG H UPG704B-15 U PG 704B-20 UPG704B-25 • Units in mm

Contextual Info: _SÌ6954DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY Vd s OO R o s io n ) I 52) I d IA I 0.065 V G S = 10 V ± 3 .9 0.095 0 V g s = 4 . 5 V ± 3.1 30 d2 Dl o Q TSSOP-8 Di Œ Si E 3] d2 • S Ì6954 D O s, E

Contextual Info: FINAL COM’L: -7/10/12/15/20, Q-12/15/20 IND: -12/14/18/24 MACH21OA-7/10/12 MACH210-12/15/20 MACH210AQ-12/15/20 a Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 64 Macrocells ■ 7.5 ns tpD Commercial

Contextual Info: HCS361 M icr o ch ip K eeL o q Code Hopping Encoder* PACKAGETYPES FEATURES Security PDIP, SOIC • • • • • • Programmable 28/32-bit serial number Programmable 64-bit encryption key Each transmission is unique 67-bit transmission code length 32-bit hopping code

Contextual Info: _ SÌ3443DV Vishay Siliconix P-Channel, 2.5-V G-S MOSFET PRODUCT SUMMARY V o s (VI -2 0 to (A) R dS{ON) (¿2) 0.065 @ V Gs = “ 4-5 V ± 4 .4 0 .090 @ V GS * -2 .7 V ± 3 .7 0.100 @ V GS = -2 .5 V ± 3 .5 (4 )S o TSOP-6 Top View