TG 348 Search Results

Contextual Info: CONDENSATEURS POLYPROPYLENE A ARMATURES METALLIQUES POLYPROPYLENE FILM-FOIL CAPACITORS CARACTERISTIQUES ELECTRIQUES Catégorie climatique Classe de stabilité Tg d à 1 kHz pour CR x1000 pF Tg d à 1 MHz pour CR ! 1000 pF Résistance d'isolement Tension d’essai

Contextual Info: PPS 13 PP 318 - PP 418 CONDENSATEURS POLYPROPYLENE A ARMATURES METALLIQUES POLYPROPYLENE FILM-FOIL CAPACITORS CARACTERISTIQUES ELECTRIQUES Catégorie climatique Classe de stabilité Tg d à 1 kHz pour CR x1000 pF Tg d à 1 MHz pour CR ! 1000 pF Résistance d'isolement

Contextual Info: CONFIGURATION: DWG.N O . J>- 50 NOMINAL IMPEDANCE OHMS _ DC TG 4.0 FREQUENCY RANGE (GHZ) _ 335 VOLTAGE RATING (MAX.VRMS) N/A VSWR (MAX.) _ N/A INSERTION LOSS (DB MAX. x v/FGHz ) N/A RF LEAKAGE (MIN.DB DOWN) GOO RF HIGH POTENTIAL (MAX.VRMS)_

TC58FVM6B5BTG65

Abstract: tc58fvm6t5 TC58FVM6T5BTG TC58FVM6B5BTG TC58FVM6T5BTG65 BA102 diode ba102 TC58 TC58FVM6B5B
Contextual Info: TC58FVM6 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 64M (4M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM6T5/B5B is a 67108864-bit, 3V read-only electrically erasable and programmable flash memory organized as

4Mx64

Abstract: SG 97 DIMM 72 pin out GMM7642147
Contextual Info: LG Semicon PRODUCT INDEX • 8MByte DRAM MODULES 168 pin DIMM GMM7641000CS/SG 1M x 64 Bit, 5V, 1K Ref., FPM - 37 GMM7641000CT/TG 1M x 64 Bit, 5V, 1K Ref., FPM - 46 GMM7641010CS/SG 1M x 64 Bit, 5V, 1K Ref., EDO - 55

105-1239-IS

Abstract: 127-RG393 PL-40 PL20 ECD10
Contextual Info: DASH ND CDNN TYPE -1/IS PL40/S /3\ /4\ -2 PL20 A ASSEMBLE PER DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TG TROMPETER ELECTRONICS INC. ANO SHALL NOT BE DISCLOSEO. COPIED OR USB] FDR PROCLRB1ENT DR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION. SH 3 REV

TC58FVM7B5BTG65

Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as

TC58FVM6B5BTG65

Abstract: TC58FVM6B5BTG TC58FVM6B5B TC58FVM6T5BTG65 tc58fvm6t5 tc58fvm6t5b BA102 diode ba102 TC58 TC58FVM6T5BXG65
Contextual Info: TC58FVM6 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 64M (4M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM6(T/B)5B is a 67108864-bit, 3V read-only electrically erasable and programmable flash memory organized as

spg-8600

Abstract: MVA generator spg-8600 KG 5546 MVA generator SPG 1200 h8640 8640B 86500 8650A 8650b
Contextual Info: EPSON AMERICA-. COMPONENT TG SO 33b4134 OODDD4Û b -23 PROGRAMMABLE STANDARD PULSE GENERATOR SPG 8600 SERIES SPG series is high precision time-base frequency gene­ rators each comprised of a small quartz-crystal element and a CMOS monolithic chip integrated into hybrid con­

TC58FVM6B5BTG65

Abstract: TC58FVM6B5B TC58FVM6T5BTG65 tc58fvm6t5 tc58fvm6t5b TC58FVM6T5BTG TC58FVM6B5BXG BA102 diode ba102 TC58
Contextual Info: TC58FVM6 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 64M (4M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM6(T/B)5B is a 67108864-bit, 3V read-only electrically erasable and programmable flash memory organized as

TC58FVM7T5B

Abstract: TC58FVM7B5BTG65 TC58FVM7T5BTG65 BA182 TOSHIBA TC58 TC58FVM7B5BTG-65 BA183 TC58FVM7T5BTG TC58FVM7T5BXG65 BA247
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as

TC58FVM7B5BTG65

Abstract: TC58FVM7t5BTG65 BK-10 HA145
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as

Contextual Info: PRELIMINARY M IC R O N I 16 MEG x 4 EDO DRAM H D A M U r iM IV I MT4LC16M4G3 MT4LC16M4H9 FEATURES PIN ASSIGNMENT Top View OPTIONS H9 G3 • Packages Plastic SOJ (400 m il) Plastic TSOP (400 mil) A3 A4 A5 DJ TG* • Timing 50ns access 60ns access 32-Pin TSOP*

8D140

Abstract: SD1400-2 oomils APAA M118 SD1400-02
Contextual Info: M tm mi RF Products RF^Pmducts m - • M icrosem i 140 C o m m erc e Drive M o n tg o m ery ville, PA 18936-1013 18936-1013 Tel: 2 1 5 6 3 1 -9 8 4 0 ^ ^ _ SD1400-2 RF & MICROWAVE TRANSISTORS 860-900MHz CLASS C, BASE STATIONS CLASS C TRANSISTOR FREQUENCY875MHZ

tray qfn 6x6

Abstract: tqfp 7x7 tray QFN tray 5x5 QFN tray QFn Package tray QFN tray qfn 4x4 QFN tray 4x4 LQFP Package tray 6x6 TRAY tray QFN 5x5
Contextual Info: Supertex Packaging Specifications Suffix Package Type B1 B2 FB FG FG FG FG GA GA K1 K1 K2 K4 K4 K5 K6 K6 K6 K6 K6 K6 K6 K6 K6 K6 K7 K7 K7 K7 K7 K7 LG L / LL MG MG N2 N3 N3 N5 N8 NG NG P P P P PG PG PG PG PJ PJ PJ SG T TG WG WG WG WG 26L BCC 84L BCC+ 64B FCBGA

ltg 551

Abstract: 221A-04 MTM12N05 MTP12N05 MTP12N06 X48V
Contextual Info: MOTOROLA SC XSTRS/R F 1 4 E- D I b3b7ES4 a O TG O MT 3 I - r - 3 9 - / 1 MOTOROLA m SEM IC O N D U C TO R TECHNICAL DATA M TM 12N05 M TP12N 05 MTP12IM06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N -Channel Enhancem ent-M ode S ilic o n G ate TM O S

0,22 j 160 tgl 55163

Abstract: VEB M ik ro e le k tro n ik Scans-048 TGL-200 asterm DSAGER0002 DSAGER00027 TGL 200
Contextual Info: ondensatoren T s c CD c~ t CD c T O Q _ CD Program m übersicht K a p a z itä ts b e re ic h B a u fo rm Typ/TG L 3300 1000 330 1000 38 159 pF - 0,1 //F p F - 0 ,1 f jf pF - 0,022 ,F p F - 0 , 0 2 2 ,F Spannungsre ih e T o le ra n z P rü fkla sse A n w e n d u n g s k la s s e

Contextual Info: GMM7732010CT/TG-6/7 LG Semicon Co., Ltd. 2,09 7 ,1 5 2 W O R D S x 72 B IT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7732010C T /T G is an 2M x 72 bits E D O D ynam ic R A M M O D U L E w hich is assem bled 8 pieces of 1M x 16bit E D O D R A M s in 44 pin T S O P II package, 4 pieces

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MAX745

Abstract: MAX7454 MAX7454UUP MAX7455 MAX7455UUP
Contextual Info: 19-3482; Rev 0; 10/04 KIT ATION EVALU E L B AVAILA HD/SD Switchable Video Filters and Buffers Features The MAX7454/MAX7455 triple-channel video reconstruction filters and buffers are ideal for high definition HD , standard definition progressive scan/noninterlaced (SDp), and standard definition interlaced (SDi)

26MHz

Abstract: hd sd video converter MAX745 MAX7454 MAX7454UUP MAX7455 MAX7455UUP 720P480P
Contextual Info: 19-3482; Rev 1; 6/05 KIT ATION EVALU E L B AVAILA HD/SD Switchable Video Filters and Buffers Features The MAX7454/MAX7455 triple-channel video reconstruction filters and buffers are ideal for high definition HD , standard definition progressive scan/noninterlaced (SDp), and standard definition interlaced (SDi)

Light-Dependent Resistor

Abstract: Light-Dependent Resistor specification Light-Dependent Resistor features SM1155 CDS light resistor
Contextual Info: SM1155 series Melody LSIs OVERVIEW The SM1155 series are CMOS melody LSIs that, together with a battery and piezoelectric buzzer, operate in one of 3 melody modes determined by bonding options. They also feature an oscillator stop function in nonplay mode and a variable pull-down resistance function that responds to input levels in order to reduce power

Light-Dependent Resistor

Abstract: SM1155 "Light-Dependent Resistor" BUZZER PIEZO-ELECTRIC 1.5V
Contextual Info: SM1155 series Melody LSIs NIPPON PRECISION CIRCUITS INC. OVERVIEW The SM1155 series are CMOS melody LSIs that, together with a battery and piezoelectric buzzer, operate in one of 3 melody modes determined by bonding options. They also feature an oscillator stop function in nonplay mode and a variable pull-down resistance function that responds to input levels in order to reduce power