TFN DIODE Search Results

4000 N CRYSTAL

Abstract: clim Piezo Ceramic Microphones rmi4 MPSA92 datasheet phone dialer 2N5401 470R MPSA42 MPSA92
Contextual Info: Application and Adjustment Hints General U3761MB-TFN The U3761MB-TFN is suitable for low-voltage, low-end telephone applications. It consists of a dialer, a ringer and a speech circuit in a single IC. The following describes the available functions of the dialer, the ringer and the speech

Contextual Info: -»wMtflggfcaA.«» sE r^ Y p tfn f.-^ a iir-r,- HARRIS SEMICOND SECTOR 37E D rr "irrriirT iaj-if! t , M302271 DGE7330 7 • HAS Optoelectronic Specifications_ T-m-ZS Photon Coupled Isolator MCA230, MCA231, MCA255 GaAs Infrared Emitting Diode & N’PN Silicon Darlington Connected Phototransistor

zenerdiode 1N4004

Abstract: CHARACTERISTICS ZenerDIODE 5.1v rmi4 5 volt piezo microphone switches 1WATT ZENERDIODE monoflop 2N5401 470R MPSA42 MPSA92
Contextual Info: U3761MB-SFN, -TFN Application and Adjustment Hints 10.00 1 Information contained in this paper is intended to provide a product description. Such description does not in any way constitute assured characteristics in the legal sense, nor do those design hints provide information regarding delivery

MMB2524

Contextual Info: f\ <z& C tFN FR A I S e m ic o n d u c to r % MMBZ5225 t h VU MMBZ5267 Zener Diodes Vz Range 3.0 to 75V Power Dissipation 300mW TO-236AB SOT-23 Top View Mounting Pad Layout 0.037 (0.95) 0.037 (0.95; 0.079 (2.0) 0.035 (0.9) t H h 0.031 (0.8) Dim ensions in inches and (millimeters)

LUM2563MU302

Contextual Info: LU M-2563M U300 / LUM-2563MU301 / LUM-2563MU302 * f : t — ¥ / Light Emitting Diodes LUM-2563MU300 LUM-2563MU301 LUM-2563M U302 • L U M -2 5 63 M U V 'J - X U T 1 7 t y 16 X 16 K "j S V h V 0 T s D - y b 1 6 X 1 6 Dot Matrix Unit Dimensions Unit : mm)

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors

str W 6553

Abstract: DIODE DO k2 k2 78.P STR 6553 lcd power board schematic APS 252 SC-614-P sc sf battery fuse XNSF 37 transistor P614 SC-601 SC-604
Contextual Info: SC-6x Processor Family Programmer’s Manual Sensory SC-6x Library 2003 Sensory, Inc. P/N 80-0212-D Programmer’s Manual SC-6x Processor Family Contents Introduction to the SC-6x . 3

TGA4509

Contextual Info: Product Data Sheet August 5, 2008 27 - 31 GHz 1W Power Amplifier TGA4509 Key Features • • • • • • • • 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI

TFN diode

Contextual Info: Advance Product Information May 19, 2004 27 - 31 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss

10KW

Abstract: TGA4509 TGA4509-EPU 50W 4 GHz linear power amplifier
Contextual Info: Advance Product Information January 23, 2003 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss

TGA1135B

Abstract: pin diode 23GHz
Contextual Info: Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier TGA1135B Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA

Contextual Info: Advance Product Information December 18, 2002 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss

TSE 151

Contextual Info: ERC01 1.5A I Outline Drawings GENERAL USE RECTIFIER DIODE : Features • W ide voltage class • BG fSISii • I I tjv : Marking High reliability ■ E I& : Applications * 5-u - K : É Color code : White •« » ¿ ft / General purpose rectifier applications

Contextual Info: Advance Product Information Jan 17, 2005 27 - 31 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • • 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI

IDC2X5M

Abstract: str W 6553 MSP50C601 MSP50C604 MSP50C605 MSP50C614 jrc 4151 CNC DRIVES 4193 jrc P614
Contextual Info: MSP50C6xx Mixed-Signal Processor User’s Guide Mixed Signal Products SPSU014A Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest

Contextual Info: E R E 7 5 3 a • : O utline D raw ings Units m m FAST RECOVERY DIODE : Features • Planer chip • V 7 b 'J J ]'V J — • T & 'yY lfc S oft recovery type Stud m ounted : Applications • S w itching pow er supplies • -J-a*y/<— j fc-OP • Free-wheel diode

Lem LT 300 - t

Abstract: NDL5200 L5104
Contextual Info: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of

Contextual Info: APT100GF60JRD A dvanced pow er T e c h n o lo g y 9 600V 140A Fast IGBT&FRED The Fast IGBT is a new generation of high voltage pow er IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free­ wheeling ultraFast Recovery Epitaxial Diode FRED offers superior

TGA1135B

Abstract: TGA1135B-SCC ka band power mmic
Contextual Info: Product Datasheet January 21, 2002 18-27 GHz 1W Power Amplifier TGA1135B-SCC Key Features • • • • • • • Primary Applications Chip Dimensions 2.641 mm x 1.480 mm • • • Product Description The TriQuint TGA1135B-SCC is a balanced twostage HPA MMIC design using TriQuint’s proven

F7007N

Abstract: T151 1SV02 WFA 21
Contextual Info: Semiconductor Products r . N channel, Single 30V/7A I^ Jl Features Low-on resistance V g s = V driving 4 4 V G S= V IEÜJ J7 G - S f f i y x J - - ? ! * - K ftiS I Avalanche capability rating Higher pulse-current Including G-S zener diode Maximum ratings and characteristics

Contextual Info: Product Data Sheet August 5, 2008 77 GHz Transceiver Switch TGS4307 Key Features • • • • • • • • I/O Compatible with MA4GC6772 3 Antenna Ports Receive, Source, and LO Ports 2.5 dB RX/TX Insertion Loss Typical 40 dB Source/Mixer Isolation Typical

TGA1135B-SCC

Contextual Info: Product Datasheet February 5, 2001 18-27 GHz 1W Power Amplifier TGA1135B-SCC Key Features • • • • • • • Primary Applications Chip Dimensions 2.641 mm x 1.480 mm • • • Product Description The TriQuint TGA1135B-SCC is a balanced twostage HPA MMIC design using TriQuint’s proven

ph 4148 zener diode detail

Abstract: ph 4148 zener diode IDC2X5M Zener Diode ph 4148 STR 6553 MOV NR zener PH 4148 MSP50C604 MSP50C605 MSP50C614
Contextual Info: MSP50C614 Mixed-Signal Processor User’s Guide SPSU014 January 2000 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

Contextual Info: 6RI50E 50 a POWER DIODE MODULE : Features • <'>*<—'>3>?-'ym 7 Glass Passivation Chip • J È i l & A ' l i P Easy Connection • fê it Insulated Type : A p p lica tio n s • Inverters • /<-yT-U— Battery Chargers • f i i ï fi Æ— DC Motors