TFK S 154 P Search Results

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

BYV16

Abstract: BYV 200v BYW 56 V BYV12
Contextual Info: BYV12 ST BYV16 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z. B. für zeilenfrequenten Betrieb im Fern­ sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode

Tfk 680

Abstract: TFK 201 tfk 140 TFK 175 tfk 830 tfk 145 BF 184 transistor TFK 03 BF184 6 tfk 145
Contextual Info: V BF 184 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: A llg e m e in und g e re g e lte H F-V erstärke rstu fe n bis 100 M H z Applications: G e ne ra l and c o n tro lle d R F am p llfie r s ta g e s up to 100 M H z

tfk 136

Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

tfk td 119

Abstract: 6 TFK 106 tfk 138 TFK u 116
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT LOCAL ATM SONET FRAMER The /¿PD98402A is one of the ATM-LAN LSIs and incorporates the TC sublayer function in the SONET/SDHbased physical layer of the ATM protocol. The main functions of the /iPD98402A include a transmit function for

4N 26 TFK

Contextual Info: T O S H IB A TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: PRELIMINARY A A |^ C a r ~ |l\J I MT2LSYT3272T1/T2, MT4LSY6472T1/T2 32K, 64K x 72 SYNCHRONOUS SRAM MODULE SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES PIN ASSIGNMENT Top View • 80 p o sitio n d u al read -o u t d u al in -lin e m em o ry m o d u le

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ iP D 9 8 4 1 1 ATM QUAD SONET FRAMER T h e ^¡P D 98411 N E A S C O T -P 4 0 is one o f A T M -LA N LSIs and provides the fu n ctio n s o f the T C sub la yer o f the S O N E T /S D H -b a se physical layer o f the ATM protocol spe cifie d by the ATM Forum .

rcl 3702

Abstract: B14L ICL 3057 IR LFN LM 3323 10HS NJU6576 NJU6576CH C0M30 434t
Contextual Info: NJU6576 3 4Z3*>X I • « i 1 O > h tb * í l t í ' y h T ' y ^ L C D s « n MJU6576 M m 3 , 4 3 4 f 9 M > « * f * -»RAM. C P U W - 7 i « S I ¡ » , H > /W * x j ^ ff* î h W L C D K 7<A* - e , w - n W Mn* * T ? |c ñ * x v > - 7 i ^ B i k i = r . c p u » 6 a 6 « i

TFK U 3212 M

Abstract: mt 15003 TFK 027 HP900 UPD78214 UPD78213GC-AB8 ZTE 751 321 umi 1A 0022h sfh tfk 3212
Contextual Info: 5 s— S 7 • 5 / — h M OS Sf*[§]§& MOS Integrated Circuit ¿ ¿ P 8 t 'y h • D 7 8 2 ^ JU?- 7 7 " * 1 2 , 7 8 2 i 'J ^ F B ^ T ^ - l 2 7 . T " § ? 8 t : " '> h • y > ^ ^ 7 7 ' - 7 8 K / ly 'J - X ^ - 8 2 1 4 <fc U 1 M A -f h L T S U i t » IftW-ORIt

thermik sensor

Abstract: a17s JC814 MS-1036 C94S TFK U108 aks ti 79 JC878 TFK 148 RB551
Contextual Info: A » 1 0 3 6 V e r : 0 A ÙÙ B 3 3 3 /4 0 0 AMÒ K8 Socket 754 Clock Generator 6ÙÙR3 8MX32bit*8PCS 1 5 -1 6 H T D Ù R S O Ù IM M *2 \7 P C IE NEW CARO PCI-E/USB PCI-E 26 North Bridge A JIR X 480 LAN ET13Î0 p c ie 30 9~11 OZ7ÎÎMP CARÙBUS CARÙREAÙER

cs1m

Abstract: PD78218A 32ksii 5A10P sc75-7 UPD78214 14X14 32KS PD7821 TFK BC
Contextual Info: NEC MOS ^.07821 8A A M O S In te g ra te d C irc u it m * = r /\r x 8 t i 'y ^ ^PD 78218A (A )tì, ¡Ü , ¡ÉittìféCPU » L tz 78K/ I v U - X n m & T , /¿PD78214(A) W y ï U H T 'T o V i? □ • To //PD78218A(A) (i, 32K/'<'-f F <7)^7. ? ROM £ 1 0 2 4 ^ '^ h 60 RAM £ F*3M L T l ' Î î o

68000 thomson

Contextual Info: SGS-THOMSON M g[R ](2m iO T iO (gS TS68008 8/16-B IT MICROPROCESSOR WITH 8-B IT DATA BUS • ■ ■ ■ ■ ■ ■ 17 32-BIT DATA AND ADDRESS REGISTERS 56 BASIC INSTRUCTION TYPES EXTENSIVE EXCEPTION PROCESSING MEMORY MAPPED I/O 14 ADDRESSING MODES 1 MBYTE LINEAR ADDRESSING SPACE

082D JRC

Abstract: shicoh b7 shicoh n7 jrc 082d AAJFF nec 1441 SFH 910 SFH 910 235 scr ky 202 45-65Hz
Contextual Info: ^ _ 5 7 - . N E C ,r M O S S f*[U B & M O S Integrateci Circuit mPD17062 P L U lî Æ & S 'V 'b - t M If, 4 fcf * y h * 7 □ V > f ^ p a y 4 1* "/ \ - m m w - , s i a s t g , s s w t - 7 h t x K •7 ° n i r 7 - v r ^ i c - f l > P h n -v F * g U - 7 • 3 y b p - 7 ^ , P L L ^ ]ffi& '> > "fe -,t ' f - <f £ l f 7

FZH 191

Abstract: SRF 3733 lzl 24h fzh 111 SRF 7068 TYA 0298 FZH 161 LOGIC CIRCUIT FZH 165 FZH 261 FZH 171
Contextual Info: r M O S I M Ä 0 S& M O S In tegrated C ircu it « PLL •a > ^q- 1 7 6 8 t IDC PLL > >-tz+f-< + f £ r t / & V' • - 7 1 ? azi > h a - ÿ V T o 4 t'7 h • C P U « , 4 t í -y h M5iJAfli:, f f i l f t * . « » ( B t T - y b • T Z b. * -V U - • 7 7 ^ t 7

TMP94FD53IF

Abstract: bosch ecu 0 261 200 100 connection diagram TFK E 1024 xz 117 sb900 bosch MA 3.1 ecu tt 4458 IRFP11 TMP94F
Contextual Info: TO S H IB A TMP92CW53IF/TMP92CU53IF TMP94FD53IF Specification Revision 1.8 18 Apr 2002 H istory R e visio n D ate N ote 1.0 29 A p r. 2 0 0 0 In itial d ra ft 1.1 1.2 31 M a v 2 0 0 0 5 J u ly 2 0 0 0 31 A u g . 2 0 0 0 A m is ta k e c o rre c tio n A d d itio n 3 .3 F la sh M e m o ry , 3 .4 S in g le B o o t M o d e T M P 9 4 F D 5 3 F

7915a

Abstract: yx 801 TFK ad 164 H13-31C st z7s SCR 131- 6 WJ 60 ic stk 432 090 LHi 878 34B SOT rjh ah
Contextual Info: ? — S • £ / — h NEC Í Í T / \ f Z 4 t ’7 h • '> > $ ^ P D 1 7 0 0 5 l i , T-V i> 9 \s • v -f ? □ zi > ' y ~ f • ~7 >f ^ □ □ > Y P — 5 • - > * x A f f l / \ - K ^ X T7 ^ |* lil L fc 4 t'- y h • > > 7¡\s3- y 7° C M O S h P -7 T -ÎO

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY