TFK S Search Results

Vishay LCD

Abstract: LCD-160H128B-TFK-VZ LCD-160H128B
Contextual Info: LCD-160H128B-TFK-VZ www.vishay.com Vishay 160 x 128 Graphic LCD FEATURES • Type: Graphic • Display format: 160 x 128 dots • Built-in controller: RA6963 • Duty cycle: 1/128 • + 5 V power supply • Optional N.V. • Material categorization: For definitions of compliance

DSX151G

Contextual Info: CRYSTAL RESONATORS SMD Type H ll£tS !!7K IiJS i!i? DSX151G SERIES □ S X I5 lG iz K IltlS ]T -£ tfK U /c tz ^5 + 4 7 The DSX151G is a compact product featuring high resistance to the environment, out­ standing stability and high reliability. Xs DV/K-Xu

TFK 082

Abstract: J1 TRANSISTOR
Contextual Info: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications

1N47A

Abstract: TFK 1n4148 1n4148 D035 tfk bav 21 1N4148 tfk 1N52B TFK Label telefunken telefunken sod57 Vishay Telefunken tfk
Contextual Info: VISHAY ▼ Vishay Telefunken Marking on Packages view from top view from too Cathoderirjg D035 Type: 1N4148 D035 Type: BZX55C. view from top □ BAV Q view from top :~ r I 1N5 i t t \ -f unwina TFK X 1N5 BAV 221 21 B D035 Type: BAV 17 - BAV 21 42 unwjnd D035

Contextual Info: Toggle sw itch e s TL FE A T U R E S G v tfK c d to m - s - s m • FnvYorm C fitiXoo f sealing • • 1,2, an d 4 p o tc cvcvfty. • Standard ondpvQ to unlock fevers. • 2 an d 3 po sitio n , m atototo* ct an d m o­ m entary toggle actio n • Temperaturerange: -6 5 "F lo +1&TF

tfk 914

Abstract: TFK 914 D transistor 81 120 w 63 cmi Transistor Mt 100
Contextual Info: A tfK Q M m an A M P com pany Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2-1.4 GHz PH1214-30EL V2.00 820 Features • • • • • • • • C20B3 NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d Class C O p e ra tio n

TFK 175

Contextual Info: A tfK Ô M m an A M P com pany 10W GaAs SPDT Switch DC-3 GHz MASW2020G V 2 .0 0 Features QNO 1 B1 COM RF1 GND 2 • V e r y l l i g l i P o w e r, l W atts I tl H C o m p r e s s i o n <f«-l()V • l.o w In s e r tio n Loss, 0. I d B T y p i c a l @ I C iH z

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

TFK 03 diodes

Abstract: tfk 605 TFK diodes tfk smd TFK 03 47 TFK 03 catalog telefunken TFK 03 160 2Z SOT23 TFK Label
Contextual Info: T e m ic TELEFUNKEN Semiconductors Tape and Reel Standards TEMIC offers T-l 3 mm and T-l3/4 (5 mm) LEDs pack­ aged on tape. The following specification is based on IEC publication 286, taking into account the industrial re­ quirements for automatic insertion.

TFK 450 B2

Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
Contextual Info: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W

TFK 236

Abstract: TFK 4 232 TAA861A schaltungen 861 taa 861 tFK 229 236 TFK 36Tfk auo 002 TAA865A
Contextual Info: TAA 861 • TAA 861 A TAA 865 • TAA 865 A Monolithisch Integrierte Schaltungen Monolithic Integrated Circuits Anwendungen: O perationsverstärker in Regelungstechnik, NF-Schaltungen, Analog-Rechnertechnik, A u to e le ktro n ik usw. Applications: O perational am plifiers in autom atic co n tro l technique, audio circuits, analogue

Westinghouse Motor protection relay

Abstract: westinghouse breaker UL1203 Square D KAL Breaker westinghouse power circuit breakers SPACE HEATER Cutler-Hammer 225 amp circuit breaker EBMBB-TTTEB32 Westinghouse Cutler-Hammer LD
Contextual Info: 2: 5: SYS19: BASE2 PDFINFO 50: 95: 98: JOB: CRMAIN06-0366-1 Name: 3C-366 3C 100: DATE: JAN 19 2006 Spectrum EBM TM hinged cover motor control enclosures are used: ɀ For general motor control and circuit protection – indoors and outdoors – in damp, wet, dirty, dusty hazardous locations without

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

Contextual Info: E lP IN HEADER? .100" 2.5 4 m m HIGH PROFILE PIN HEADER SPECIFICATION * Current Rating: 3 A * Withstanding Voltage: 500 VAC ( 1 min.) * Insulation Resistane«: 1000 Mn min. * Contact Resistance: 20 m il max. * Operating Temperature: •40*C to +85*C ;’,v :

e1030

Contextual Info: A T 2 3 LO OD fO N 27 .6 O / 7t 7i E T3 o 2mmcoizmX'&']æ t? i > ^ n 3 [^] sr £ f/tS^O vfSSjÆ L “C «fe-â-C* £ i, 'J -t 7' ^ ^ 'V 3> ^ ± ^ ^ h ¿± sy =& 1 7 3 6 3 0 , 7 73637 O »— I cc NOTE ; /J^TO BE M E A S U R E D B E T W E E N P a ^ AND 2 ¿ ^ T O BE M A TE WI TH C A P HSG S M O O T H L V

TFK 715

Abstract: BAW56S
Contextual Info: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363

TFK 940

Contextual Info: EL-IK3 £, 7 DIMENSIONS > 7 L t z ^ TO -\W'C7<r>&\&-hQ>atefrJS-%%?'< (Unit: mm F T fo 14, iii1 S $ S 1 4 W ^ ( = ^ ^ J 1 - 0 The EL-1K3 is a high-power GaAs IRED mounted in durable, hermetically sealed TO-18 metal can package, which provides years of reliable performance even under

BZ102

Abstract: TFK U 217 B bz102-2v8 5V stabilisator f 102 TFK 19 001
Contextual Info: BZ 102/. Silizium-Diffusions-Stabilisator-Dioden Silicon diffusion voltage stabilising diodes Anwendungen: Spannungsstabilisierung und Spannungsbegrenzung Applications: Voltage stabilisation and voltage regulation Abmessungen in mm Dimensions in mm Normgehäuse

transistor BF 257

Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität

Contextual Info: PRODUCT SPECIFICATION DATE: KUAN HSI • JU Mm -A - ^ ■Ab mMtm NO. 50R02008 Reed Relay : D1B121000 OUTSIDE DIMENSION : UNIT mm SHEET n n n.-fZL K U A N HSI ) D1B121000 T 3— C J 2.54 h^8.9mox.-^ 2.54 TOLERANCE : ± 0 . 1 m m 2. SCHEMATIC : TOP VIEW

S-AU4

Abstract: toshiba rf module
Contextual Info: S-AU4 RF POWER AMPLIFIER MODULE UHF POWER AMPLIFIER MODULE HAM SSB/FM Unit in FEATURES : . Output Power P0á 17W . Minimum Gain Gp=19.2dB . Efficiency ÏT — 35% . 50 0 2— R 2.1±0.2 5 2 .8 15 2T CJ c5 -H -H % Input/Output Impedance n 5 -g fa 5*0115

BYV16

Abstract: BYV 200v BYW 56 V BYV12
Contextual Info: BYV12 ST BYV16 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z. B. für zeilenfrequenten Betrieb im Fern­ sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode

TFK u 116

Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
Contextual Info: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW

BF314

Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
Contextual Info: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität