TF CARD Search Results

PWS-1K41P-1R

Abstract: W83527HG W83527 CSE-827T-1400B 932S421 SNK-P0037P SC827 E5500 x8dtt 93C46.SC827
Contextual Info: Contact Us Advanced Search Reseller Resource Center SuperServer 6026TT-TF Products Systems 2U [ 6026TT-TF ] Key Features 4 Integrated Boards Four systems nodes in a 2U form factor. Each node supports the following: 1. Intel Xeon® processor 5600/5500 series, with QPI up to 6.4 GT/s

TF02

Abstract: tf 240c 250v THERMAL Fuse RESISTOR TFV3 thermal fuse 125 250V 2A thermal Fuse thermal Fuse 250V 2A D6032
Contextual Info: TF SERIES RoHS 5 R TF D 5% C R 0Ω 1 THERMAL FUSE RESISTORS, 1/2W to 60W PERMANENT OR REPLACEABLE FUSE Term.W is RoHS compliant & 260°C compatible Meets UL, FCC, REA, and EIA requirements Fusing-to-operating current ratio as low as 1.25:1! Fusing times can be custom tailored

TF02

Abstract: tf 240c 250v D6032 TFR-05 thermal Fuse 250V 2A TF-02 TFV3 4K resistor 50w Thermal fuse resistors 1-33C
Contextual Info: TF SERIES RoHS 5 R TF D 5% C R 0Ω 1 THERMAL FUSE RESISTORS, 1/2W to 60W PERMANENT OR REPLACEABLE FUSE Term.W is RoHS compliant & 260°C compatible RESISTORS CAPACITORS COILS DELAY LINES 3 TFV RCD Ω 5 % 100 RCD T 100Ω F05A 5% Meets UL, FCC, REA, and EIA requirements

TF card

Abstract: micro sd connector micro SD Card connector microsd connector microSD fujitsu FUJITSU card connector fujitsu ten micro Card Connector FCN-560
Contextual Info: microSD/TF Card Connector FCN-560 Series RoHS compliant microSD is currently the world’s smallest memory card storage system, specifically designed for use with ultra-small mobile phones and other devices. Like the miniSD, the microSD/TransFlash is ideal

TF card

Abstract: FUJITSU card connector micro sd connector micro SD Card connector fujitsu microsd connector push switch 6mm fujitsu ten microsd SD Card connector
Contextual Info: microSD/TF Card Connector FCN-560 Series RoHS compliant microSD is currently the world’s smallest memory card storage system, specifically designed for use with ultra-small mobile phones and other devices. Like the miniSD, the microSD/TransFlash is ideal

Contextual Info: Infrared Light Emitting Diodes SIR • SIM Versions include card remote control (SIR-320ST3) for custom application. Package 3 4 Resin 5 4 Resin Side view resin Standard Characteristics Ap (nm) tr, tf (/*s ) (9 1 /2 (deg) Basic ordering unit Rank 950 950

X0002

Abstract: 28F008SA E0000 LH28F008SCN-TF
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH28F008SCN-TF Flash Memory 8M 1Mb x 8 (Model Number: LHF08CTF) Spec. Issue Date: November 2, 2004 Spec No: EL16Y141 LHF08CTF ●Handle this document carefully for it contains material protected by international

MG150Q2YS11

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG150Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 1 .O^s Max. = 0.5ns (Max.) • Low saturation:

ULIS

Abstract: E80276 RM30TB-M
Contextual Info: RM30TB-M,-H &W& R M 30T B - M ,- H • lo fio tti JlW M . 60A • V r rm tf— • EM?V y íkWfc • ULfi?Æî£ • L / iË lË H : . 4 0 0 / 8 0 0 V V Yellow Card No ; E80276 N

MG75Q2YS11

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .0[is Max. • Low saturation: V CE tn- = 0.5 n s (Max.)

Contextual Info: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.Ojas Max. t|y = 0.5ns (Max.)

Contextual Info: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG50Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT 4-FA ST-O N -TA B * 100 High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 1 .Ops Max. • Lo w saturation:

Contextual Info: PRECISION FAILSAFE TH ER M A L-FU SE RESISTORS CUSTOM DESIGN - V2 W to 60 W A TT msmt •v TF SERIES FEATURES The Ultimate Failsafe Design! ■ Instrinsically safe, completely flameproof. Component opens without hazard of overheating. ■ Meets UL, FCC, REA and EIA requirements

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT «-FA ST-O N -TA B ♦100 High Power Switching Applications Motor Control Applications F e a tu re s • High input im pedance • High speed: tf = 1 .0|is Max.

Contextual Info: 8 K f t EEPROM FM 11R F 08 8kBits Contactless IC Card Chip FM11RF08 SHANGHAI FUDAN MICROELECTRONICS CO. LTD. FM1 .R F x 8bit e e p r o m , 8 * t l l 0.6m < cm os Z V, \M£ in # j$ l* l M W •EPROM X E , 'tf m’c^j IK , i l T j tt.iV jfitjftl^ tl:j}|.

mafe modem

Abstract: MC68DP356
Contextual Info: ! ^c fC MOTOROLA M icroprocessor a n d M em ory Technologies Group ' A, tf £ 2 Order this document by MC68DP356/D MC68DP356 Product Brief V.34 Modem Chip Set INTRODUCTION The MC68DP356 is a two-chip set that includes the principal components of a V.34 modem, including fall back

H13A1

Abstract: photo interrupter module h13a1 photo interrupter module H13A2 H13A1-H13A2 H13A 4N38 4N38A H11A10 H11AA1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 100 100 100 100 50 50 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 30 30 1 1 2 2 2

RCD PV SERIES RESISTOR

Contextual Info: PRECISIO N FAILSAFE TH ER M A L - FUSE R E S IS TO R S CUSTO M D ESIG N - 1 / 2 W ATT to 60 W ATT TF SERIES \\v FEATURES The ultimate failsafe design! □ Intrinsically safe, completely flameproof. Component opens without hazard of overheating. □ Meets UL, FCC, REA, and EIA requirements

Contextual Info: Fiat Link Card 1 of 1 1 -g s a 42- ^ « - ì °6°3> 1 iLtD V P D 1 < 2 g 5 J ] ! i e à 2 -^ R C0603> ìflEEEED 1 < 5 ^ 5 3 ^ 1 2 -^ R j 0 6 0 3 ?. l <W Tf R ie R c o 6 D 3 2 _ H0LEC276D87 1 < 1 M 1 M -R ^ R i 0 6 0 3 . 1 < V 6 4<T|V P ‘19

K53V

Contextual Info: Fiat Link Card 1 of 1 1 -g s a 42- ^ « - ì °6°3> 1 iLtD V P D 1 < 2 g 5 J ] ! i e à 2 - ^ R C0603> 1 < 5 ^ 5 3 ^ 1 2 -^ R j 0 6 0 3 ?. l <W Tf ì f l E E E E D R ie R c o 6 D 3 2 _ H0LEC276D87 1 < 1 M 1 M -R ^ R i 0 6 0 3 .

TC40H147P

Abstract: TC40H147
Contextual Info: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T C 40H 147 10 - T 0 - 4 - L I N E Tf*A flLM^ 7D/C I W “ U l l I "T # M i I PR IO R IT Y ENCODER The TC4QH147 is a decitnal-to-BCD encoder which detects the highest order MLM level among

H13B1

Abstract: h13b1 photo interrupter module H13B2 photo interrupter module h13a1 photo interrupter module NT 407 F TRANSISTOR SEN 1327 4N38 4N38A H11A10
Contextual Info: P R O G R A M M A B LE T H R E S H O LD CO U PLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 1 5 I 5

DBL 1052

Contextual Info: r 3 PRODUCT NUMBER SEE TA B LE -, 100/2. 54 • >i I > i l ¡§I8 lít í 5 3 *4u* rI* C o Ui _. 20 0_ 5, 08 |i Ì 5 JL 5 5“ . 276 7, 01 . 310 7, 87 £? t : u a A t-3 ï—0-£ _ 013 REF. I ' J J Ù L s : tf Ï4 4 IÍ +. 015 005 38 1 , 02 -, 13 040 . 1052. 67

OPB703A

Abstract: QPB703A BN9A Reflective photosensor
Contextual Info: OPTEK TECHNOLOGY INC DbE D | b7TÛSflO 0000312 D | T - HI-T3 Optoelectronics Division _ j I _O T R W Electronic Components Group Product Bulletin 5284 January 1985 ^ M K K M Æ Ê ^ U M tf T tT w V Reflective Object Sensor Type QPB703A F e a tu re s A b s o lu ts M a x im u m R a tin g s U a - 25°C unless otherwise noted