TF 431 M Search Results

BF 331

Abstract: 10MEG DA10 MAX961 MAX962 DO122
Contextual Info: * MAX961 FAMILY MACROMODELS * -* FEATURES: * Ultra-Fast, 7nS Propagation Delay 5mV overdrive * Rail-to-Rail Input Voltage Range * Low Power: 8.5mA Per Comparator (+5V) * Single 3V/5V Supply Operation * Available in 8-Pin uMAX/SO (Single MAX961)

irf4321

Abstract: 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433
Contextual Info: A4 FAIRCHILD SEMICONDUCTOR IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD mamm am mam i DE J 341T a7 M O D E T i n 1 h A Schlumberger Company Power And Discrete Division Description T-39-11 TO-204AA TO-22QAB

4N50

Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB

LM 471 APPLICATION

Abstract: 500MHz7 4532 ct 3225 TAIYO NT TS-601
Contextual Info: 7 i 7 " f h51y 7°tf — X T7 7~A— ! Ferrite chip beads lineup list £ BK vU-X'ts -f< T )-h ^ -v 7 ° t :-X 'T £ (FBM) v'J-X 2 0 < 7 ) v 'J - X T \ iliS -§ -7 -r > ^ G H The combination of the BK Series multilayer high-loss inductors and the FBM series wire wound chip ferrite beads allow you to cover a wide (broad) range of

TIL38

Abstract: FPE500 diode TIL38 infrared-emitting TIL38 TX FPE104 FPE106 FPE510 FPE520 FPE530
Contextual Info: 1-12 Infrared Photo Emitters If lF = 100 mA mA Max V T yp W aveleng th @ Peak E m ission nm Typ vF D evice No. D e s c rip tio n A xial In te n s ity lF = 100 mA m W /s r Typ Data Sheet Page No. FPE104 Lead Frame Package Narrow Beam 100 1.35 890 10 4-23 FPE106

2N3055 RCA

Abstract: rca413 RCA411 2N3440 rca rca 2n3055 rca 41013 2N5415 2N3772 RCA BUX 64 2N3439
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

MG20G4GL1

Abstract: mg20g4
Contextual Info: MG20G4GL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 7-F A S T -O N -T A B # 1 1 0 4 -F A ST -O N -T A B # 2 5 0 FEATURES: . The Collector is Isolated from Case. . 4 Power Transistors and 4 Free Wheeling Diodes

1431T

Abstract: BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

ESM5045D

Contextual Info: N AMER P H IL IP S /D IS C R E T E b'lE ]> bbS3T31 0D2flb0b 053 H A P X ESM5045D V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives,

Contextual Info: RED INDICATES ORIGINAL DA TA C O N T A I N E D IN T H I S DO CUM ENT IS P R O P R IET A R Y TO TROMPETER EL EC T R O N IC S INC . A ND S H A L L NO T B E D I S C L O S E D . C O P I E D OR U S ED F O R PR O CU REM EN T OR MA NU FA CT UR E W IT H O U T EXPR ES S W RITTEN PERM ISSION

2N6514

Abstract: 40852 BU106 BUX18 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A

2sk1461

Abstract: 34641
Contextual Info: 2SK1461 2056 U H U ltra h ig h V o lta g e S eries V OSs = 9 0 0 V N Channel P o w er M O S F E T F eatures •Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss

Contextual Info: VWM 200-01P Advanced Technical Information VDSS = 100 V RDSon = 3.6 m Ω ID25 = 210 A Three phase full bridge with Trench MOSFETs L+ G3 G5 S3 S5 G1 S1 G4 G6 S4 S6 L1 L2 L3 G2 S2 L- MOSFETs Applications Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

XP134A11A1SR

Contextual Info: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state

UI132

Abstract: 2SC4425
Contextual Info: Ordering n u m b e r:EN 2848 _ 2 S C 4 4 2 5 NPN Triple Diffused Planar Silicon Transistor Sw itching R egulator A pplications F eatures . High breakdown voltage, high reliability • Fast switching speed tf: 0.1 ps typ • WideASO • Adoption of MBIT process

HD6321

Abstract: HD68821 ca21u HT 2811 1A21 HD632 HD6821 HD68A21 ACW11
Contextual Info: H D 6321/H D 6821-P I A P e rip h eral In te rfa c e A d a p te r HD6321/HD6821 P lA li, 2 o n lk £ L ¿ : 8 h* / (J f-K A . —F B «r fcoJtH IBW B * > f 7 i - x l S I f t . # - V A. * - U Ì < n & ' r < r > Q 9 7 4 > u n m i ó i ' ~ f r i u ? - > i > L S z r i : i O k } ) , rtlT jv

RCA 40874

Abstract: 2N6175 2N3055 specification 2N6179 2N6474 JAN 2n3055 pnp transistor 2N6175 rca 2n1485 2N5296 RCA rca Transistors 4a 322
Contextual Info: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. P y “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. jTO-39»* lc > - 1 A max. P y - 10 W max. (TO-39 * 4 2 x4 2 4 2 x4 2

s4t4

Contextual Info: VWM 270-0075X2 Three phase full bridge with Trench MOSFETs VDSS = 75 V ID25 = 270 A RDS on = 2.1 mΩ L+ T1 G1 G3 T3 S3 G5 T5 S5 S1 L1 L2 L3 T2 G2 G4 T4 S4 G6 T6 S6 S2 L- Applications MOSFET T1 - T6 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

Contextual Info: TLP2630 GaAÄAs IRED & PHOTO-IC DEGITAL LOGIC ISOLATION. TELE-COMMUNICATION. ANALOG DATA EQUIPMENT CONTROL. MICROPROCESSOR SYSTEM INTERFACE. The TOSHIBA TLP2630 dual photocoupler consists of a pair of GaA£As light emitting diode and integrated high gain, high speed photodetector.

Contextual Info: VWM 350-0075P VDSS = 75 V RDSon = 2.3 m Ω ID25 = 340 A Three phase full bridge with Trench MOSFETs Preliminary data L+ T1 T3 T5 G1 G3 G5 S1 S3 S5 T2 T4 L1 L2 L3 T6 G2 G4 G6 S2 S4 S6 L- MOSFETs T1 - T6 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

Contextual Info: VWM 270-0075X2 Three phase full bridge with Trench MOSFETs VDSS = 75 V ID25 = 270 A RDS on = 2.1 mΩ L+ T1 G1 G3 T3 S3 G5 T5 S5 S1 L1 L2 L3 T2 G2 G4 T4 S4 G6 T6 S6 S2 L- Applications t MOSFET T1 - T6 Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C IF25

2N3055 RCA

Abstract: RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A

rca 2n3055

Abstract: rca 40327 RCA 2N3055 transistor 2n3055 audio amplifier application note 2n3055 application note RCA 40636 transistor 40327 rca 2N3439 RCA 2N3055 transistor RCA 528
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . . f r t o 2 0 M H z . . . P y t o 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

mod500a

Contextual Info: CX-Silico n ix in c o r p o r a te d MOD500A/500B/500C 4 N-Channel Enhancement Mode Transistors HERMETIC MODULE TOP VIEW PRODUCT SUMMARY PART NUMBER V BR DSS (V) r DS(ON) ( il) (A) LEADFORM OPTION ID .S =G MOD500A 500 0.43 13 Straight =G MOD500B 500 0.43