TF 400 Search Results

TF915

Abstract: 800 300 tf91320 10MSA
Contextual Info: o fast switching thyristors > 1OOArms thyristors rapides > lOOAeff TtlOMSON'CSF Tamb = * ° C Types •o V r r M ■tsiwi* 10 ms VDRM V (A) (A) 700 Arm s / Tease = 80°C Tj = 125°C TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 01 02 04 06 08 10

TF-330C

Abstract: 447MHZ 10.7 MHZ
Contextual Info: SAW Filter Epson Toyocom Product number please contact us TF-330A : X1L000371xxxx00 TF-330C : X1L000381xxxx00 SAW FILTER FOR TPMS, RKE, Japan ARIB std. T67 / RF TF - 330A / C •Lowest insertion loss. •Excellent shock resistance and environmental capability

toyocom crystal filter 10.7

Abstract: TF-330C toyocom crystal filter toyocom filter 10,7 TF330 10.7 MHZ toyocom filter
Contextual Info: SAW Filter Epson Toyocom Product number please contact us TF-330A : X1L000371xxxx00 TF-330C : X1L000381xxxx00 SAW FILTER FOR TPMS, RKE, Japan ARIB std. T67 / RF TF - 330A / C •Lowest insertion loss. •Excellent shock resistance and environmental capability

TF78

Abstract: TF-78 transistor* tf 78/30
Contextual Info: TF 78/30, TF 78/60 Not for new d e ve lo p m e n t P N P Transistors for A F output stages and sw itching applications TF 78/30 and TF 78/60 are alloyed P N P germanium transistors in cases 8 A 3 D IN 41878 sim. TO-8 . The terminals are electrically insulated from the case.

Contextual Info: TF-Sicherungseinsätze für Nennspannungen bis 90 V / TF -Fuse links for rated voltage up to 90 V / TF -Fusibles pour tension nom. jusqu'à 90 V Isolierkörper / Insulating body / Corps Isolants: aus Thermoplast / out of thermoplastic / de matière thermoplastique

pudenz

Abstract: AS580 162.7049 AS150 AS150A
Contextual Info: TF-Sicherungseinsätze TF-fuse-links TF-Cartouches fusibles für Nennspannungen bis 90 V for rated voltage up to 90 V pour tension nom. jusqu' à 90 V Isolierkörper: aus Thermoplast UL 94-V0, wärmeformbeständig Insulating body: out of thermoplastic (UL 94-V0, transparent)

Temex Electronics

Abstract: 21.4mhz filter 4mhz smd crystal tekelec-temex
Contextual Info: Low Cost Products - Crystal Filter 7 mm x 5 mm x 1 mm Ceramic SMD packaged TEMEX TF SM-2 TIME & FREQUENCY Data Sheet Minimum Ordering Information Requirement 1. MODEL TF SM-1 2. DIMENSION TF SM-2 _ 7 x 5 x 1 mm 3. ELECTRICAL SPECIFICATIONS Frequency 3.1 Nominal Center Frequency fo

Temex Electronics

Abstract: tekelec-temex
Contextual Info: Low Cost Products - Crystal Filter 6 mm x 3.5 mm x 1 mm Ceramic SMD packaged TEMEX TF SM-1 TIME & FREQUENCY Data Sheet Minimum Ordering Information Requirement 1. MODEL TF SM-1 2. DIMENSION TF SM-1 _ 6 x 3.5 x 1 mm 3. ELECTRICAL SPECIFICATIONS Frequency 3.1 Nominal Center Frequency fo

TRANSISTOR C 3205

Abstract: 3205 transistor TRANSISTOR BR C 3205 transistor TD-100 ZTX576 DSA003769 3205 ic
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 -0.8 tr ts nS µS 500 5 Switching time VCE sat - (Volts) IC/IB=10 -0.6 -0.4 -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 tf nS 1000 ts C B 800 600 tf

Contextual Info: TO SHIBA 2SC5355 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC 5355 SWITCHING REGULATOR APPLICATIONS HIGH VO LTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf = 0.5 /us Max. , tf = 0.3 /us (Max.)

25 V 500mA TRANSISTOR SOT23

Abstract: FMMT449 FMMT549 DSA003694
Contextual Info: FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0.1 1 I+ - Collector Current Amps VCE(sat) v IC Switching Speeds

FMMT455

Abstract: B455 DSA003695
Contextual Info: FMMT455 tf ts ns µS tr 0.4 tf Switching time - Volts 0.3 IC/IB=10 0.2 0.1 400 6 IB1=IB2=IC/10 VCE=10V 700 600 td 500 0.1 400 50 1 300 0.01 1 I+ - Collector Current (Amps) 0.1 1 I+ - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10

AC101TF

Abstract: Altima Communications Altima AC101QF TP125 561b
Contextual Info: Altima Communications Inc. AC101QF/TF Ultra Low Power 10/100 Ethernet Transceiver GENERAL DESCRIPTION FEATURES The AC101QF/TF is a highly integrated, 3.3V, low power, 10Base-T/100Base-TX/FX, Ethernet transceiver implemented in 0.35µm CMOS technology. Multiple modes of operation, including

AC101TF

Contextual Info: PRELIMINARY DATA SHEET • AC101 AC101QF/TF Ultra Low Power 10/100 Ethernet Transceiver GENERAL DESCRIPTION FEATURES The AC101QF/TF is a highly integrated, 3.3V, low power, 10BASE-T/100BASE-TX/FX, Ethernet transceiver implemented in 0.35 µm CMOS technology. Multiple modes of operation,

SEFUSE SF240E

Abstract: SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x
Contextual Info: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*compliant since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are

P3078

Abstract: transistor* tf 78/30 TF78-60 legiert
Contextual Info: Nicht für N e u e n tw ick lu n g PISIP-Transistoren fü r N F -E n d stu fe n und Sc h a lte ra n w e n d u n ge n TF 78/30 TF 78/60 TF 7 8 /3 0 und TF 7 8 /6 0 sind legierte P N P -G e rm a n iu m -T ra n sisto re n m it dem Gehäuse 8 A 3 D IN 41 8 7 8 T O -8 ä h n lic h . Die A n schlüsse sin d vo m Gehäuse ele ktrisch iso liert. Für die

NPN Transistor TO92 40V 200mA

Abstract: ZTX449 DSA0037665
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX449 ISSUE 2 – MARCH 1994 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 VCE=10V tf,tr,td ns 0.8 IC/IB=10 tf Switching time VCE sat - (Volts) 150 0.6 0.4

Contextual Info: TO SHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION 2-03.5 + 0.2 Repetitive Peak Off-State Voltage V d RM = 4500V Note 1 l T ( R M S ) = 1200A(Tf=77°C) R.M.S On-State Current l R ( R M S ) = 900A(Tf=77°C)

LR26550

Contextual Info: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting

TF02

Abstract: tf 240c 250v THERMAL Fuse RESISTOR TFV3 thermal fuse 125 250V 2A thermal Fuse thermal Fuse 250V 2A D6032
Contextual Info: TF SERIES RoHS 5 R TF D 5% C R 0Ω 1 THERMAL FUSE RESISTORS, 1/2W to 60W PERMANENT OR REPLACEABLE FUSE Term.W is RoHS compliant & 260°C compatible Meets UL, FCC, REA, and EIA requirements Fusing-to-operating current ratio as low as 1.25:1! Fusing times can be custom tailored

latching relay

Abstract: 12v dc relay 8 pin 12V RELAY PIN DIAGRAM 5 pin relay 12v 5 V DC RELAY ac relay Matsushita polarized relay 7 pin RELAY 1500 V LR26550 TF224 8 pin SMD relay
Contextual Info: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting

TF02

Abstract: tf 240c 250v D6032 TFR-05 thermal Fuse 250V 2A TF-02 TFV3 4K resistor 50w Thermal fuse resistors 1-33C
Contextual Info: TF SERIES RoHS 5 R TF D 5% C R 0Ω 1 THERMAL FUSE RESISTORS, 1/2W to 60W PERMANENT OR REPLACEABLE FUSE Term.W is RoHS compliant & 260°C compatible RESISTORS CAPACITORS COILS DELAY LINES 3 TFV RCD Ω 5 % 100 RCD T 100Ω F05A 5% Meets UL, FCC, REA, and EIA requirements

1838 t

Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

D-10

Abstract: IRGPH50MD2 1838t
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf