TF 130 Search Results

TF915

Abstract: 800 300 tf91320 10MSA
Contextual Info: o fast switching thyristors > 1OOArms thyristors rapides > lOOAeff TtlOMSON'CSF Tamb = * ° C Types •o V r r M ■tsiwi* 10 ms VDRM V (A) (A) 700 Arm s / Tease = 80°C Tj = 125°C TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 01 02 04 06 08 10

AC101TF

Contextual Info: PRELIMINARY DATA SHEET • AC101 AC101QF/TF Ultra Low Power 10/100 Ethernet Transceiver GENERAL DESCRIPTION FEATURES The AC101QF/TF is a highly integrated, 3.3V, low power, 10BASE-T/100BASE-TX/FX, Ethernet transceiver implemented in 0.35 µm CMOS technology. Multiple modes of operation,

1838 t

Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

D-10

Abstract: IRGPH50MD2 1838t
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

2sd 2901

Abstract: low noise HEMT 2sd 311
Contextual Info: Low Noise HEMT Chip Form JS8901-AS FEATURES: ULTRA LOW NOISE FIGURE I.O d B a tf = 12 GHz 1.3 dB a tf = 18 GHz • 0.3 ¿tm GATE LENGTH SUPER HIGH ASSOCIATED GAIN 11 dB at f = 12 GHz 9 d B a t f = 18 GHz CHIP FORM HIGH MAXIMUM AVAILABLE GAIN 13 dB at f = 12 GHz

2SK2124

Abstract: DSA003718
Contextual Info: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2

Contextual Info: Ordering number:EN4779 NPN Triple Diffused Planar Silicon Transistor 2SC5041 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (HVP process). · High breakdown voltage (VCBO=1600V).

Contextual Info: A POW ERHOUSE IGBT IQBT + SOFT RECOVERY/ULTRA FAST A.P. RECTIFIER PACKAGE DEVICE TYPE bvces VOLTS *C cont AMPS tf * VCE (sat) VOLTS nsec *rr *(1) Reverse Diode nsec PDISS WATTS “ TO-254 H TO-258 SNGD20620 600 20 2.6 570 130 75 SNGD20620A 600 20 3.1 310

GT20J301

Contextual Info: GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

transistor 2sc5296

Abstract: 2sc5296
Contextual Info: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .

Contextual Info: I Ordering number: EN 2 4 2 5 2SD1878 No.2425 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features . High speed tf=100ns

Contextual Info: Ordering number: EN 2 4 2 8 A 2SD1881 SA NPN Triple Diffused Planar Silicon Transistor i Color TV Horizontal Deflection Output Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features . High speed tf=100ns

GT20J301

Contextual Info: GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. z Low saturation voltage

t85 10E3

Abstract: 50E3 J-10 400CJ j321a
Contextual Info: TF Series Miniature Snap-acting Switches Features/Benefits • Broad range of operating forces • Ratings up to 21 AMPS • Wide variety of actuator styles • Quick connect terminations Typical Applications • Motor controls • Thermostatics • Portable tools

DITTO

Abstract: MIP103 2pg301 Power Switch 45V MIP111 MIP108 2PG302 2PG351 MIP107 MIP105
Contextual Info: Field Effect Transistors • IGBT Absolute Maxim um Ratings Application Strobo Type No. Electrical Characteristics VcES lc lc peak V ce (sat) (V) (A) (A) (V) td (on) td (off) tf (ns) (ns) (ns) 2P G 301 400 20 130 < 2.25 20 25 250 2 N T ype D47 2PG 302 400

TG 2039

Abstract: 2SD1876 TV horizontal Deflection Systems 2SD187
Contextual Info: Ordering number:EN 2423 2 S D 1 8 7 6 NPN T rip le Diffused Planar Type S ilicon Transistor Color TV Hori zontal Deflection Output Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features . High speed tf=100ns

TG 2039

Abstract: en2424 A 2039 g 2SD1877 TV horizontal Deflection Systems
Contextual Info: Ordering number: EN 2424 2 S D 1 8 7 7 NPN Triple Diffused Planar Type Silicon Transistor Color TV Hori zontal Deflection Output Appli cations Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features . High speed tf=100ns

namur standard

Abstract: 001h
Contextual Info: Panel Meters and Controllers Controller for Pulse Signals Type MDI 40 TF • 4-dgt multi-range µP-based controller • 2 independent measuring channels • For rate, speed, frequency and period measurements • Ranges from 0.001Hz to 50kHz/20µs to 1000s

Contextual Info: o CO CO Materials and Finish o 5 Housing MaterialHigh Temperature Reflow Compatible CO o Tf UL 94V-0 Rated Color: Black 10 Shield MaterialNickel Plated Copper Alloy c\| rO 0 Contact MaterialPhosphor Bronze § Contact Plating OptionsStandard: 0.0001” Nickel

Contextual Info: 2.5V/3.3V 1:10 DIFFERENTIAL LVPECL/LVECL/HSTL CLOCK DRIVER Precision Edge SY100EP111U FINAL FEATURES • 2.5V and 3.3V power supply options ■ Guaranteed AC parameters over temperature: • fMAX = 3GHz • < 25ps output-to-output skew • < 250ps tr / tf

Contextual Info: KSC5086 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR HIGH DEFINITION COLOR DISPLAY HORIZONTAL DEFLECTION OUTPUT DAMPER DIODE BUILT IN TO-3PF • High Collector-Base Voltage ( V Cb o = 1 5 0 0 V ) • High Speed Switching (tF=0.1jisec Typ) ABSOLUTE MIXIMUM RATING

2SA1952

Abstract: 2SC5103
Contextual Info: 2SA1952 Transistors High-speed Switching Transistor −60V, −5A 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103.

VT 1165

Contextual Info: 2.5V/3.3V 1:10 DIFFERENTIAL LVPECL/LVECL/HSTL CLOCK DRIVER FEATURES DESCRIPTION • 2.5V and 3.3V power supply options ■ Guaranteed AC parameters over temperature: • fMAX = 3GHz • < 25ps output-to-output skew • < 320ps tr / tf • < 475ps propagation delay