TF 130 Search Results

TF915

Abstract: 800 300 tf91320 10MSA
Contextual Info: o fast switching thyristors > 1OOArms thyristors rapides > lOOAeff TtlOMSON'CSF Tamb = * ° C Types •o V r r M ■tsiwi* 10 ms VDRM V (A) (A) 700 Arm s / Tease = 80°C Tj = 125°C TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 01 02 04 06 08 10

c 828

Abstract: C828 mu 171 10MSA
Contextual Info: S G S — TH O M SO N 0 | 7 1 2 1 S 3 7 □ □ 0 ‘H S S THOMSON SEMICONDUCTORS 0 I fast switching thyristors ^ 1 0 0 Arms Tomb = 25°C •o Types <TSM* 10 ms V RRM V DRM A 700 A r m s /Tease = 80°C TF 666 TF 666 TF 666 TF 666 TF 666 _TF 666 TF 666 TF 666

15268

Abstract: AM150MX-TF
Contextual Info: AM150MX-TF September 2002 Rev. 3 DESCRIPTION AMCOM’s AM150MX-TF is a part of the TF series of GaAs MESFETs. This part has a total gate width of 15.0mm. The AM150MX-TF is designed for high power microwave applications, operating up to 6 GHz. The TF series is in a drop-in mounting style. The bottom of the

AC101TF

Abstract: Altima Communications Altima AC101QF TP125 561b
Contextual Info: Altima Communications Inc. AC101QF/TF Ultra Low Power 10/100 Ethernet Transceiver GENERAL DESCRIPTION FEATURES The AC101QF/TF is a highly integrated, 3.3V, low power, 10Base-T/100Base-TX/FX, Ethernet transceiver implemented in 0.35µm CMOS technology. Multiple modes of operation, including

Contextual Info: BRIGHT VIEW ELECTRONICS CO.,LTD LED TAPE AND REEL LAMP BVQ-5M1RS1 -TF PACKAGE CONFIGURATION Processive direction H DESCRIPTION P2 P1 Dice Material : Light Color : Lens Color : Stand-Off P/N : GaAlAs/GaAs Red Red Color Red Diffused BVQ-5M1RS1 R-TF ANODE W2

USW-2

Abstract: Thermal CUTOFF thermal-cutoff USW-215T E126429 USW-225T USW-210T 216t US ELECTRONICS
Contextual Info: Thermal Cutoff USW-2 series Thermal Cutoff Fuses U.S. Electronics Inc Ph: 314 423 7550 USW-2 SERIES Fax: (314) 423 0585 TEMPERATURE Part No. Tf Tf Tolerance USW-211T 102°C(241.2°F) 70°C(183.6°F) USW-210T 115°C(264.6°F) 85°C(210.6°F) USW-215T 130°C(291.6°F)

AC101TF

Contextual Info: PRELIMINARY DATA SHEET • AC101 AC101QF/TF Ultra Low Power 10/100 Ethernet Transceiver GENERAL DESCRIPTION FEATURES The AC101QF/TF is a highly integrated, 3.3V, low power, 10BASE-T/100BASE-TX/FX, Ethernet transceiver implemented in 0.35 µm CMOS technology. Multiple modes of operation,

sefuse d6x

Abstract: SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E
Contextual Info: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*conform since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are

SEFUSE SF240E

Abstract: SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x
Contextual Info: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*compliant since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are

PE1541

Abstract: PM8943 Philips capacitor 166 Philips electrolytic 132
Contextual Info: Philips Semiconductors Product specification Video driver hybrid amplifier FEATURES PINNING • Typical transition timer, 10 to 90% with C l = 10 pF: - at 35 V (p-p) swing tr = 2.2 ns; tf = 2.0 ns - at 40 V (p-p) swing tr = 2.3 ns; tf = 2.1 ns - CR3424 PIN

Pt 100 RTD Siemens

Abstract: circuit diagram for profibus connector siemens Siemens pt100 temperature transmitter Siemens PT100 temperature sensor RTD Thermocouple Type L Thermocouple Type g Siemens PT100 temperature sensor type s thermocouple siemens Pt100 3 wire PT-100 temperature transducer
Contextual Info: TF 212 / TF 212-Ex Field mounted temperature transmitters, PROFIBUS PA, Pt 100 RTD , thermocouples, 1 or 2 independent channels 10/11-8.70 EN P R O F PROCESS FIELD BUS B U S • Input – – – – Resistance thermometer (2, 3, 4-wire method) Thermocouples

Contextual Info: SMJ4C1024 1 048 576-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS023B-DECEMBER 1988-REVISED MARCH 1992 H J / HL / FQ PA CKA G ESt TOP VIEW Processed to MIL-STD-883, Class B Single 5-V Supply (10% Tolerance) TF c NC c Performance Ranges: W A9 RÄS TF A0 A1 'a(C)

MCT2E soic

Abstract: hma121 H11AG3 moc3041 MOC3051 MOC3043 equivalent MOC3051-M MOC3041-M MOC256-M moc3041 application note
Contextual Info: Optoelectronics Products Optocouplers 4-Pin DIP Part Number Forward Voltage VF V CTR @ 1mA IF (%) Min Max BVCEO Min (V) BVECO Min (V) tR/tF Max (µs) VISO ACRMS (V) 1 Minute 7500 35 6 300 / 250 5300 Max BVCEO Min (V) BVECO Min (V) tR/tF Max (µs) VISO ACRMS (V)

LR26550

Contextual Info: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting

1838 t

Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

D-10

Abstract: IRGPH50MD2 1838t
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

Diode MARKING S37

Abstract: DIODE A131 ERC38
Contextual Info: E R C 3 8 ia : Outline Drawings « a a ia ^ ^ - K FAST RECOVERY DIODE A • 45^1 I Features • a tf - K tf # # ! ;» » .' ■ Super high speed switching. : Marking • f-'sX'sn&lfikv fit-3 - K; È Low VF in turn on Color COC6 : White n m z High voltage by mesa design.

2sd 2901

Abstract: low noise HEMT 2sd 311
Contextual Info: Low Noise HEMT Chip Form JS8901-AS FEATURES: ULTRA LOW NOISE FIGURE I.O d B a tf = 12 GHz 1.3 dB a tf = 18 GHz • 0.3 ¿tm GATE LENGTH SUPER HIGH ASSOCIATED GAIN 11 dB at f = 12 GHz 9 d B a t f = 18 GHz CHIP FORM HIGH MAXIMUM AVAILABLE GAIN 13 dB at f = 12 GHz

msc 5511

Abstract: 276 238G TFK 241 d78p238 TFK 082 uPD78P238 uPD78P238GC uPD78P238KF PD78P238GJ sbthi
Contextual Info: M o s » i t m s s M O S Integrated C ircu it //PD78P238 ¿¿PD78P238 Ci, //PD78238 75^/1v 7. ? ROM £ 9 > • ? < A PROM i v ^ ^ P = i > t 0i - ^ T " - r o (i EPROM H t ^ l i / : 8 tf 7 h • v ^ -— tf(Z «t £ 7 ° P 7 = j A *ê& <& .*<nJtÊ& 'fc«>,

gs 069 0605

Abstract: 4210M 8016 nec 5501 gm
Contextual Info: SUPER LOW NOISE HJ FET FEATURES_ NE4210M01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • S U P E R L O W N O IS E F IG U R E : 0.8 dB TYP a tf = 12 GHz • H IG H A S S O C IA T E D G A IN : 11.0 dB TYP a tf = 12 GHz • G A T E W ID T H : W g = 200 jim

2SK3046

Contextual Info: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2

2SK3046

Contextual Info: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2

ENH064V1-1300

Contextual Info: ENH064V1-1300 ENH064V1-1300 Color TF eatures TFTT-LCD Module FFeatures PERFORMANCE FEATURES n 16cm [6.4"] VGA Format n High Brightness 1300 cd/m² n Built-in Long Life CCFT Backlight n Index Matching Film (IM) n Wide Viewing Angle Horizontal: 120 Vertical: 90