TF 115 250V 20 A Search Results

DF184S

Abstract: DF128S SDF DF141S DF170S tf 216 10a 250v DF240S E117626 DF141S DF66S DF216S
Contextual Info: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts

FGT303

Abstract: t04 88 T04 transistor tr T04 sanken power transistor B105 CF35 FM20 pdp driver
Contextual Info: IGBT FGT303 March, 2006 •Package—TO220F ■Features • Generation 3 IGBT Trench Technology • Low VCE(sat): 1.3V typ • Large Collector Current: Icp=160A ■Applications • PDP driver ■Equivalent circuit C(2) Ｇ(1) E(3) Absolute maximum ratings

MOSFET 1000v 30a

Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Contextual Info: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

FDB44N25

Abstract: n-channel 250V power mosfet FDB44N25TM
Contextual Info: UniFET TM FDB44N25 250V N-Channel MOSFET Features Description • 44A, 250V, RDS on = 0.069Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 47 nC)

FDAF69N25

Contextual Info: UniFET TM FDAF69N25 250V N-Channel MOSFET Features Description • 34A, 250V, RDS on = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC)

Contextual Info: 2SK3517-01 Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3651-01R [0311] FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-3PF High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: 2SK3518-01MR FUJI POWER MOSFET 2SK3518-01MR FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings Features 1 10 Applications o Zth ch-c [ C/W] 10 -1 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 10

Samwin sw830

Abstract: SW830 Samwin CHMC 37
Contextual Info: SAMWIN SW830 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time,

Contextual Info: TrenchTM Power MOSFETs VDSS ID25 IXTC110N25T RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = 250V = 50A ≤ 27mΩ Ω ISOPLUS220 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

crt monitor circuit diagram

Abstract: NTE7176 NTE7177
Contextual Info: NTE7176 Integrated Circuit High Voltage CRT Driver for Color Monitor Description: The NTE7176 is an intergrated high voltage CRT driver circuit designed for use in color monitor applications. The IC contains three high input impedance, wide band amplifiers which directly drive the

KHB5D0N50F

Abstract: KHB5D0N50P D 92 M - 02 DIODE
Contextual Info: SEMICONDUCTOR KHB5D0N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

KHB5D0N50F

Contextual Info: SEMICONDUCTOR KHB5D0N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

Contextual Info: APTM50DSKM65T3G Dual Buck chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

APT0406

Abstract: APT0502 APTM50DSK10T3G
Contextual Info: APTM50DSK10T3G Dual Buck chopper MOSFET Power Module 13 14 Application • AC and DC motor control • Switched Mode Power Supplies Q2 11 18 22 7 19 10 23 CR1 29 30 8 CR2 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12

APT0406

Abstract: APT0502 APTM50DSKM65T3G
Contextual Info: APTM50DSKM65T3G Dual Buck chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

APT0406

Abstract: APT0502 APTM50DDAM65T3G
Contextual Info: APTM50DDAM65T3G Dual Boost chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR1 CR2 22 7 23 8 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: TrenchTM HiperFETTM Power MOSFET VDSS ID25 IXFH110N25T = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: TrenchTM Power MOSFETs VDSS ID25 IXTH110N25T IXTV110N25TS = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

KHB5D0N50F

Abstract: KHB5D0N50P KHB5D0N50F2
Contextual Info: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

78l33

Abstract: TDA 9555 tda9211 78L33 datasheet TDA9556 spark gap capacitors 1.5kv 78L3.3 *78L33 FDH400 TDA9210
Contextual Info: TDA9556 7.5 NS TRIPLE-CHANNEL HIGH VOLTAGE VIDEO AMPLIFIER PRELIMINARY DATA above is required, ensuring a maximum quality of the still pictures or moving video. Perfecly matched with the TDA9210 and TDA9211 ST preamplifiers, it provides a highly performant and very cost effective video system.

76N2

Abstract: to-247 to-220 to-3p 76N25T IXTP76N25T IXTQ76N25T
Contextual Info: TrenchTM Power MOSFET N-Channel Enhancement Mode TO-263 AA IXTA VDSS ID25 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T RDS(on) ≤ TO-3P (IXTQ) G G D (Tab) DS G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

FDH400

Abstract: STV9553 AN1510
Contextual Info: STV9553 12 ns TRIPLE-CHANNEL HIGH VOLTAGE VIDEO AMPLIFIER above is required, ensuring a maximum quality of the still pictures or moving video. Perfecly matched with the STV921x ST preamplifiers, it provides a highly performant and very cost effective video system.