TF 115 250V 15A Search Results

tf 216 10a 250v

Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
Contextual Info: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly

Contextual Info: Description: L50 thermal cut-off/fuse with plastic housing used in household appliances, electronic appliances, fan heaters, transformers, automotive industry. Small compact design and dust proof construction. Rating: 250V 15A Max. 184°C limitation on plastic housing

DF184S

Abstract: DF128S SDF DF141S DF170S tf 216 10a 250v DF240S E117626 DF141S DF66S DF216S
Contextual Info: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts

DF216S

Abstract: DF98S DF280S
Contextual Info: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts

SEFUSE SF240E

Abstract: SEFUSE SF214E SEFUSE SEFUSE SF129E SEFUSE SF226e SF240E SF119E SEFUSE SF214E sefuse sf 91e SF139Y
Contextual Info: SEFUSE TM THERMAL CUTOFF 8th Edition Cutaway View of SEFUSETM SF Type SF Type SEFUSE TM Contents Introduction . 4 Features . 4

Contextual Info: 2SK3651-01R [0311] FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-3PF High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

2N6547

Contextual Info: Product Specification www.jmnic.com 2N6547 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators ・PWM inverters and motor controls

2N6547

Abstract: 2N6546 tf 115 250v 2a
Contextual Info: SavantIC Semiconductor Product Specification 2N6546 2N6547 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ·Switching regulators

2N6547

Abstract: 2N6546
Contextual Info: JMnic Product Specification 2N6546 2N6547 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators ・PWM inverters and motor controls

2N6547

Abstract: tf 115 250v 15a 2N6546
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6546 2N6547 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators

AN1001

Abstract: IRFBA22N50A 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD-91886C IRFBA22N50A SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

DIODE 10D2

Abstract: CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1
Contextual Info: MITSUBISHI MITSUBISHI NchNch IGBT IGBT CT60AM-18F CT60AM-18F INSULATED INSULATED GATE GATE BIPOLAR BIPOLAR TRANSISTOR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 4.0 ● VCES . 900V

15F50K

Abstract: APT15F50K APT15F50KF MIC4452 100s 434
Contextual Info: APT15F50K_KF 500V, 15A, 0.39Ω Max, trr ≤190ns N-Channel FREDFET APT15F50KF Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT15F50KF

Abstract: APT15F50K MIC4452
Contextual Info: APT15F50K_KF 500V, 15A, 0.39Ω Max, trr ≤190ns N-Channel FREDFET APT15F50KF Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

MOSFET IRF 630 Datasheet

Abstract: AN1001 IRFBA22N50A smps power
Contextual Info: PD-95905 SMPS MOSFET IRFBA22N50APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) max ID 0.23Ω 24A 500V Benefits l l l l Low Gate Charge Qg results in Simple

035H

Abstract: IRFP31N50L IRFPE30
Contextual Info: PD - 94081B IRFP31N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 0.15Ω 500V Features and Benefits

Contextual Info: APT15F50K_KF 500V, 15A, 0.39Ω Max, trr ≤190ns N-Channel FREDFET APT15F50KF Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

CT60AM18F

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: PD-91886C IRFBA22N50A SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Contextual Info: PD - 95051 SMPS MOSFET IRFP31N50LPbF Applications HEXFET Power MOSFET • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.15Ω 500V 170ns 31A • Motor Control applications

k3226

Abstract: LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234
Contextual Info: HE D I MflSS4SS aOQTOlO 2 | Data Sheet No. PD-9.474B INTERNATIONAL RE CTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 HEXFET TRANSISTORS IR F234 IR F235 NCHANNEL 250 Volt, 0.45 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.

CT60AM-18F

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

GE6062

Abstract: GE6060 ge6061
Contextual Info: HARRIS SEMICOND SECTOR 27E » • 43QHE,.7]i 0020415 2 « H A S !_ File Number Power Transistors GE6060,GE6061,GE6062 15.85 - " r '3 3 '2 ^ 1 ' 20-Ampere N-P-N Darlington Power Transistors

GES060

Abstract: GE5060 J325 tf 115 250v 15a 100J GE5061 GE5062 ge5062T tf 115 250v 2a
Contextual Info: File Number GE5060, GE5061, GE5062 15.84 20-Am pere N -P -N Darlington Power Transistors TERMINAL DESIGNATION : F LA N G E Features: • HIgh-voltaga operation: 350, 400, 450 volts ■ Gain o l 100 at 10A Applications: ■ Series/shunt regulators • Autom otive ignition