TESLA SEMICONDUCTOR Search Results

KF520

Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
Contextual Info: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5

Tesla

Abstract: SBV525 RHY19 tesla semiconductor asco Q61708 tesla b 100
Contextual Info: R H Y 19, SBV525 Hall probes for small air gaps Hall-effect device RHY 19 and SBV 525 are designed for magnetic field measure­ ments in extremely narrow air gaps semiconductor material InAs . Hall voltage leads: blue tubing; control current leads: red tubing.

Tesla

Abstract: SV210 TESLA 110 SV230S SV230 YV20 tesla b 100
Contextual Info: SV 210, SV 230 S Hall signal probes w ith vapour-deposited layer SV 210, SV 230 S are medium sensitivity Hall devices with a relatively small tem­ perature coefficient. Within the linear region they may be used as multipliers, outside in control and regulating circuits semiconductor material InAs - vapour-deposited

SV110

Abstract: Q64021 TESLA 110 S110S hall TESLA 3D Hall device
Contextual Info: SV110 Hall signal probe w ith vapour-deposited layer S V 1 1 0 is a high sensitivity, high internal resistance Hall device for application in control and regulating circuits semiconductor material InSb — vapour-deposited layer . Terminals: Hall voltage red; control current green; wire length 100 mm.

tangential

Abstract: Tesla Q64003-T21
Contextual Info: TC 21 Tangential probe TC 21 is a Hall effect device for measuring the tangential field intensity of magnetic materials semiconductor material InAs . Hall voltage leads: blue tubing; wire length: 120 mm. Control current leads: red tubing; tubing length: 100 mm.

SV130

Abstract: 64021-S130-S3 Q64021-S130-S1 Q64021-S
Contextual Info: S V 130 Not for new developm ent Hall signal probe with vapour-deposited layer SV 1 3 0 is a high sensitivity, high internal resistance Hall device, particularly for control and regulating applications semiconductor material InSb — vapour-deposited layer .

Tesla

Abstract: SBV595 Hall 300 Q64099
Contextual Info: SBV595 Hall field probe The field probe SBV 595 w ith an epitaxial semiconductor layer of GaAs is particularly suitable for precision measurements of magnetic fields. The cross-shaped Hall chip ensures a particularly small linearization error. •^electrical system

Contextual Info: CurveTracer CT-3100/3200 For High-Power Semiconductor Device Characterization DATA SHEET Emerging energy standards and increasing power consumption demand additional performance capabilities. As such, pressure has been placed on manufacturers to rapidly design, develop and characterize new power devices to develop innovative chipset designs to provide more eficiency.

Q64001

Abstract: FA22e EA218 f22e Hall 22e Q64001-F22E Tesla
Contextual Info: EA218, FA 22e Insertion probe EA218, Field probe FA22e E A 218 and F A 2 2 e are Hall generators suitable for measuring AC and DC fields semiconductor material InAs . EA 218 Hall voltage leads: red/yellow, control current leads: green/violet (In mounting the top face (seat of electrode) must be insulated)

Contextual Info: Halbleiter-Sensoren Semiconductor Sensors Symbole Begriffe Symbols Terms s M agnetische Induktion B M agnetic induction Fl Linearitätsfehler 'o u t Linearity error Output current O perating current A usgangsstrom Arbeitsstrom , Betriebsgleichstrom A juI !

AN3525

Abstract: magnetic flow meter MAGNETIC METER tesla coil MR2A16A 104Gauss tesla semiconductor
Contextual Info: Freescale Semiconductor Application Note AN3525 Rev. 0, 11/2007 Impact of External Magnetic Fields on MRAM Products by: Jason Janesky Freescale Semiconductor Austin, TX 1 Introduction This application note discusses magnetic fields, the sources and magnitudes of magnetic fields, and their

ct scanner

Abstract: .01 uf disc capacitor EUROFARAD capacitor datasheet EUROFARAD ceramic capacitor nova* kemet ceramic capacitor SSQ21113 murata Ceramic Disc Capacitors SCR SN 101 hv20 "x-ray generator"
Contextual Info: Index Test Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 High Voltage/High Temperature Series . . . . . . . . . . . . . . . . . . . . . .5 High Temperature Ceramic Cases Series C3 . . . . . . . . . . . . . . . .6

RHY17

Abstract: RHY18 Q61708 tesla semiconductor Hall 300
Contextual Info: R H Y17, RHY18 Low-temperature Hall probes RH Y 17 and R H Y 18 are Hall generators for measuring magnetic fields down to —2 6 9 °C. The flat and cylindrical respectively forms are suitable for universal and axial measurements (respectively). They find application in cryology, i.e. super­

INDUCTION

Abstract: MAGNETIC METER magnetic transistor Tesla TESLA 1 07960
Contextual Info: Magnetic Units Magnetic Induction vs. Magnetic Field Magnetic induction and magnetic field are often used synonymously. In many cases it is easy to conclude from magnetic induction to magnetic field and vice versa. The magnetic field H describes the field generated by a free current only, the magnetic

RHY10

Abstract: RHY11 APP20 Q61708
Contextual Info: R H Y 10, RHY11 Axial field probes RHY 10 and RHY 11 are Hall generators for measuring axiaf magnetic fields in smaller and larger respectively diameter bores (semiconductor material InAs). Hall voltage leads: blue tubing; control current leads: red tubing.

Hall Siemens sbv 525

Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
Contextual Info: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25

magnetoresistor

Contextual Info: SÌE D • flaBSbOS DOlbS'te 1 MSIEfi M agnetoresistor FP 30 D 250 E - SIEMENS AKTIEN6ESELLSCHAF Features 0 ,5 î0 .i -Active area • InSb/NiSb semiconductor CuL 0 0 .0 8 • Flux concentrating iron substrate m • High sensitivity r m

FC33

Abstract: S290 Q64003-F FC34 Fc-34 FC32
Contextual Info: FC 32, FC 33, FC34 Field probes FC 32, FC 33, and FC 34 are designed for high-precision measurements of magnetic fields. Temperature coefficients j8 are minimized semiconductor material InAsP . Type Order number FC 32 FC 33 FC 34 Q 640 03 -F 32 Q 640 03 -F 33

we381

Abstract: magneto resistor
Contextual Info: Infineon technologies FP 410 L 4 X 80 FM Double Differential Magneto Resistor Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage

siemens hall ferrite

Contextual Info: SIEMENS Magnetics 1.1 Magnetic units and definitions 1.1.1 Magnetic flux <I> The magnetic flux <1> results as a product of electric voltage and time. The S.l. unit of magnetic flux is the Weber Wb or the Volt-second (Vs). If the magnetic flux <J>changes

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

Ferroxcube 3C8

Abstract: U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note
Contextual Info: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive

SBV579

Abstract: tesla semiconductor
Contextual Info: SBV579 Hall field probe The field probe SBV 579 is only suited to measure DC magnetic fields. The Hall chip of cross-shaped design ensures a particularly small linearization error semi­ conductor material InAs . The electrical system is protected by a coat of varnish.

SBV566

Abstract: hall generator sbv 566 SBV570
Contextual Info: SBV570 Hall signal probe The signal probe SB V 570 serves for contactless signal emission or position indication of magnets. Its design and dimensions are similar to those of SB V 566, however, it does not have a ferromagnetic cover and has no ferromagnetic substrate; i.e. there