TESLA B 100 Search Results

KF 517

Abstract: transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND FE R N SE H E N piy!E§HÜ [r a d io -television] APRIL 1976 S5ITS 1-8 SHJLENBANDGERÄT "B 90” TESLA - .B 90" Zu den Importen bei Spulentonbandgeräten wird künftig auch das TESLA-Erzeugnis "B 90"

service Tesla B 100

Abstract: Lautsprecher LP service-mitteilungen Radio Fernsehen Elektronik VEB Keramische Werke servicemitteilungen GER-A keramische Werke Hermsdorf VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN service tesla
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEH EN 9 != ! r a d i o -television SEITE AUSGABE: JUNI 1 - Das Vollstereo-Tonbandgerät TESLA B 100 zählt zu den Im­ porten des Jahres 1974• Das Gerät ist als Spulen-Bandgerät konzipiert und verfügt über zwei

servicemitteilungen

Abstract: service-mitteilungen "service-mitteilungen" RFT service-mitteilungen RFT Information Mitteilung VEB RFT mitteilung aus dem veb rft Tesla Leipzig servicemitteilungen rft
Contextual Info: SERVICE-MITTEILUNGEN VEB I N D U S T R I E V E R T R 'E B RU ND FU NK UNO FER NS EH EN — i1rapio -television AUSGABE: A 1985 S e ite 1-2 Mitteilung aus den VEB RFT Industrie vertrieb Potsdam / EG 1. Zentrale Reparatur von Motoren aus TESLA-Spulentonbandgeräten

SV110

Abstract: Q64021 TESLA 110 S110S hall TESLA 3D Hall device
Contextual Info: SV110 Hall signal probe w ith vapour-deposited layer S V 1 1 0 is a high sensitivity, high internal resistance Hall device for application in control and regulating circuits semiconductor material InSb — vapour-deposited layer . Terminals: Hall voltage red; control current green; wire length 100 mm.

TESLA BP 4651

Abstract: tesla bm 388e TESLA TESLA BM 429 4090 dm hf nu bp 4490 BM 445E BP4650 tesla transistoren TESLA BS 488 ELEKTROMAGNET MIT STABILISIERTEM
Contextual Info: Fertigungssortiment ELEKTRONISCHE MESSGERÄTE ELEKTRONENMIKROSKOPE NMR SPEKTROMETER EINHEITLICHE KLASSIFIKATION: FACHGEBIET391 TESLA BRNO NATIONALUNTERNEHMEN INHALT 39111 - ELEKTRONISCHE MESSGERÄTE FÜR SPANNUNGEN UND ABGELEITETE GROSSEN K L A S S IF IK A T IO N

tangential

Abstract: Tesla Q64003-T21
Contextual Info: TC 21 Tangential probe TC 21 is a Hall effect device for measuring the tangential field intensity of magnetic materials semiconductor material InAs . Hall voltage leads: blue tubing; wire length: 120 mm. Control current leads: red tubing; tubing length: 100 mm.

Tesla

Abstract: SV210 TESLA 110 SV230S SV230 YV20 tesla b 100
Contextual Info: SV 210, SV 230 S Hall signal probes w ith vapour-deposited layer SV 210, SV 230 S are medium sensitivity Hall devices with a relatively small tem­ perature coefficient. Within the linear region they may be used as multipliers, outside in control and regulating circuits semiconductor material InAs - vapour-deposited

SV130

Abstract: 64021-S130-S3 Q64021-S130-S1 Q64021-S
Contextual Info: S V 130 Not for new developm ent Hall signal probe with vapour-deposited layer SV 1 3 0 is a high sensitivity, high internal resistance Hall device, particularly for control and regulating applications semiconductor material InSb — vapour-deposited layer .

Tesla

Abstract: SBV595 Hall 300 Q64099
Contextual Info: SBV595 Hall field probe The field probe SBV 595 w ith an epitaxial semiconductor layer of GaAs is particularly suitable for precision measurements of magnetic fields. The cross-shaped Hall chip ensures a particularly small linearization error. •^electrical system

BMN-35H

Abstract: recoma magnet AN5020 AS5020 Tesla sensor Bomatec
Contextual Info: AN5020_3 MAGNETIC PROPERTIES REQUIRED FOR USE WITH THE AS5020 APPLICATION NOTE Introduction The AS5020 6-bit Absolute Angular Position Encoder device provides the positional information of a simple magnetic source placed close to it. The AS5020 device provides for a

Q65111-L100-D

Abstract: FP111L100 L100
Contextual Info: FR 111 L100 Center-tap magneto resistor The center-tap magneto resistor FP 111 L 100 is a magnetically controllable resistor made of InSb/NiSb and having a basic resistance R0 of 2 x 100Q. It is mounted on an insulated iron substrate. The " L " material is characterized by a large resistance

Lake Shore Cryotronics

Abstract: TG-120-CU IMI-7031 tesla Diode GaAlAs Diode AT 330 magnetic diode sensor TG-120 DIODE 4d replacement TG-120PL
Contextual Info: 1-12 TG-120 Gallium-Aluminum-Arsenide Diodes Series TG-120 Gallium-Aluminum-Arsenide Diodes* • GaAlAs Diodes • • Voltage-temperature characteristics are monotonic over the useful temperature range from 1.4 K to 500 K. Excellent sensitivity dV/dT at temperatures

Q64001

Abstract: FA22e EA218 f22e Hall 22e Q64001-F22E Tesla
Contextual Info: EA218, FA 22e Insertion probe EA218, Field probe FA22e E A 218 and F A 2 2 e are Hall generators suitable for measuring AC and DC fields semiconductor material InAs . EA 218 Hall voltage leads: red/yellow, control current leads: green/violet (In mounting the top face (seat of electrode) must be insulated)

Contextual Info: SIEMENS FP 412 L 100 Differential Magneto Resistor ’ ^Punching—points 00.8 ;=[o.o4ic W o j s ia ; 1) If delivery os tape,separate at punching—poinls 2) Connections on both sides free of lacquer 3) Mechanical connections 4) Center-distance between the Diff,-Systems

Contextual Info: TL173I, TL173C LINEAR HALL-ELLECT SENSORS D2526, MARCH 1979-REVISED APRIL 1988 • Output Voltage Linear with Applied Magnetic Field • Sensitivity Constant Over Wide Operating Temperature Range • Solid-State Technology • Three-Terminal Device • Senses Static or Dynamic Magnetic Fields

T112-16

Abstract: Halbleiterbauelemente DDR Datenblattsammlung Tesla katalog tesla schaltkreise mikroelektronik datenblattsammlung VEB mikroelektronik mikroelektronik RFT mikroelektronik DDR rft katalog
Contextual Info: Di vorliegenden Datenblätter dienen nur sur- Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente ©ingestuften Sortimente© Aus den Datenblättern können keine Liefer- oder ProduktVer­ bindlichkeiten abgeleitet werden*

tl3101

Abstract: TL3101C TL3101I TESLA transistor
Contextual Info: TL3101I, TL3101C SILICON HALL-EFFECT SWITCH A P R IL 1 9 8 5 — R E V I S E D A P R IL 1 9 8 8 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • LU P A C K A G E T O P V IE W

IMI-7031

Abstract: RF-800-4 800-4 RF-800-4-4G RF-800-4-4L magnetic wire data Tesla sensor STYCAST TESLA 1
Contextual Info: RF-800 Rhodium-Iron RTDs 1-33 RF-800 Rhodium-Iron RTDs Good long term stability • Reproducibility better than ± 0.01 K below 400 K • Nearly linear response above 100 K • Moderate magnetic field dependence from 77 K to 400 K The RF-800-4 27 Ω at 0 °C rhodium-iron

az7500

Abstract: 21AMP4A TESLA 110 se 145
Contextual Info: AW 53—80 9.5 Obrazovka AW 53-80 9.5.1 Popis Obrazovka TESLA AW 53-80 obr. 144 ma obdélnikové stinitko se zaoblenymi rohy a je urcena pro televizni prijimace. Jeji hlavni vnéjsi rozméry a zapojeni patice sou uvedeny na obr. 145. Ponicr stran stinitka 3 : 4 odpovidà mezinarodnimu dopo-

SBV566

Abstract: hall generator sbv 566 SBV570
Contextual Info: SBV570 Hall signal probe The signal probe SB V 570 serves for contactless signal emission or position indication of magnets. Its design and dimensions are similar to those of SB V 566, however, it does not have a ferromagnetic cover and has no ferromagnetic substrate; i.e. there

TESLA 1

Abstract: 104Gauss
Contextual Info: Differential Magneto Resistor FP 412 D 250 Dimensions in mm Features Typical applications • • • • • • • • • • • Accurate intercenter spacing High operating temperature range High output voltage Signal amplitude independent of speed Compact construction

tl3103

Abstract: TL3103C TL3103I D3184 Linear Hall-effect Sensor Toroid International
Contextual Info: TL3103I, TL3103C LINEAR HALL-EFFECT SENSORS D3184, MAY 1 98 5 -REVISED FEBRUARY 1989 LU PACKAGE TOP VIEW Output Voltage Linear with Applied Magnetic Field Sensitivity Stable Over Wide Operating Temperature Range V CC Buried Hall Cell Reduces Changes Due to

Hall Siemens sbv 525

Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
Contextual Info: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25

Ferroxcube 3C8

Abstract: 204T250-3C8 pulse transformer driver ic Amp. mosfet 1000 watt MPS-U10 application note gate driver for h bridge mosfet core 3c8 U 126 204T250 ac step-up transformer winding awg
Contextual Info: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive