KF 517
Abstract: transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND FE R N SE H E N piy!E§HÜ [r a d io -television] APRIL 1976 S5ITS 1-8 SHJLENBANDGERÄT "B 90” TESLA - .B 90" Zu den Importen bei Spulentonbandgeräten wird künftig auch das TESLA-Erzeugnis "B 90"
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III/18/379
KF 517
transistor KF 517
Transistoren DDR
service-mitteilungen
KF517
transistor gt 322 b1
Ziphona
bauelemente DDR
servicemitteilungen
KT326B
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service Tesla B 100
Abstract: Lautsprecher LP service-mitteilungen Radio Fernsehen Elektronik VEB Keramische Werke servicemitteilungen GER-A keramische Werke Hermsdorf VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN service tesla
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEH EN 9 != ! r a d i o -television SEITE AUSGABE: JUNI 1 - Das Vollstereo-Tonbandgerät TESLA B 100 zählt zu den Im porten des Jahres 1974• Das Gerät ist als Spulen-Bandgerät konzipiert und verfügt über zwei
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III/18/379
service Tesla B 100
Lautsprecher LP
service-mitteilungen
Radio Fernsehen Elektronik
VEB Keramische Werke
servicemitteilungen
GER-A
keramische Werke Hermsdorf
VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
service tesla
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servicemitteilungen
Abstract: service-mitteilungen "service-mitteilungen" RFT service-mitteilungen RFT Information Mitteilung VEB RFT mitteilung aus dem veb rft Tesla Leipzig servicemitteilungen rft
Contextual Info: SERVICE-MITTEILUNGEN VEB I N D U S T R I E V E R T R 'E B RU ND FU NK UNO FER NS EH EN — i1rapio -television AUSGABE: A 1985 S e ite 1-2 Mitteilung aus den VEB RFT Industrie vertrieb Potsdam / EG 1. Zentrale Reparatur von Motoren aus TESLA-Spulentonbandgeräten
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III/18/379
servicemitteilungen
service-mitteilungen
"service-mitteilungen"
RFT service-mitteilungen
RFT Information
Mitteilung VEB RFT
mitteilung aus dem veb rft
Tesla
Leipzig
servicemitteilungen rft
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WK16412
Abstract: wk16414 KT201 IRS 8342 WK16413 LQ470 LQ410 1PP75 KC639 KT728
Contextual Info: TESLA ELEKTRONICKE SOUCASTKiT KO N CERN R O ZN O V nO/iynpOBOÆHMKOBbie npn6opbi A H o n o ro B b ie M H T e rp a n b H b ie MMKpOCXeMbl 1 U n c fjp o B b ie M H T e rp a / ib M b ie M U K p O C X e M bl 2 rn ö p k i/ iH b ie M H T e rp a / ib H b ie MMKpOCXeMbl
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Katalog tesla tranzistor
Abstract: OC26 Tesla katalog GS507 156NU70 TESLA 102NU71 GF-50 OC30 Tesla 2NU74
Contextual Info: È o n s ìr n k É iii h i a l o j f germanìovych tranzistoru T E S L 4 R O Z N O V K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek
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TT346B
AF139)
TT346E
IT346B
Katalog tesla tranzistor
OC26
Tesla katalog
GS507
156NU70
TESLA
102NU71
GF-50
OC30 Tesla
2NU74
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FP30L100J
Abstract: magneto resistor Tesla Resistor
Contextual Info: FP30L100J Magneto resistor F P 3 0 L 1 0 0 J is a magneto resistor made of indium antimonide — nickel antimonide w ith a basic resistance R0 of 100 £2. The " L " material has a smaller temperature coefficient TC and a lower relative resistance variation R B/R 0 in the magnetic field
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FP30L100J
FP30L100J
Q65030-L100-J
magneto resistor
Tesla Resistor
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SV110
Abstract: Q64021 TESLA 110 S110S hall TESLA 3D Hall device
Contextual Info: SV110 Hall signal probe w ith vapour-deposited layer S V 1 1 0 is a high sensitivity, high internal resistance Hall device for application in control and regulating circuits semiconductor material InSb — vapour-deposited layer . Terminals: Hall voltage red; control current green; wire length 100 mm.
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SV110
SV110
-S110-S2
Q64021
-S110-S3
V20/B
AV20/V20
TESLA 110
S110S
hall
TESLA
3D Hall device
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TESLA BP 4651
Abstract: tesla bm 388e TESLA TESLA BM 429 4090 dm hf nu bp 4490 BM 445E BP4650 tesla transistoren TESLA BS 488 ELEKTROMAGNET MIT STABILISIERTEM
Contextual Info: Fertigungssortiment ELEKTRONISCHE MESSGERÄTE ELEKTRONENMIKROSKOPE NMR SPEKTROMETER EINHEITLICHE KLASSIFIKATION: FACHGEBIET391 TESLA BRNO NATIONALUNTERNEHMEN INHALT 39111 - ELEKTRONISCHE MESSGERÄTE FÜR SPANNUNGEN UND ABGELEITETE GROSSEN K L A S S IF IK A T IO N
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FACHGEBIET391
TESLA BP 4651
tesla bm 388e
TESLA
TESLA BM 429
4090 dm hf nu
bp 4490
BM 445E
BP4650
tesla transistoren
TESLA BS 488 ELEKTROMAGNET MIT STABILISIERTEM
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tangential
Abstract: Tesla Q64003-T21
Contextual Info: TC 21 Tangential probe TC 21 is a Hall effect device for measuring the tangential field intensity of magnetic materials semiconductor material InAs . Hall voltage leads: blue tubing; wire length: 120 mm. Control current leads: red tubing; tubing length: 100 mm.
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Q64003-T21
tangential
Tesla
Q64003-T21
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magneto resistor
Abstract: tesla FP30L100E Q65030-L100-E tesla resistor L100 TC25 magneto Q6503 tc-2b
Contextual Info: FP 30 L 100 E Magneto resistor FP30L100E is a m agneto resistor made of indium antimonide — nickel antimonide with a basic resistance R 0 of 1 0 0 Q . The " L " material has a smaller temperature coefficient TC and a lower relative resistance variation R B/R0 in the magnetic field
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FP30L100E
Q65030-L100-E
FP30L100E
magneto resistor
tesla
Q65030-L100-E
tesla resistor
L100
TC25
magneto
Q6503
tc-2b
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maa 502
Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
Contextual Info: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik
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tesla potentiometer
Abstract: sy320 service Tesla B 100 TESLA AM -piezofilter say 30 t197 transistoren von tesla service-mitteilungen sy 200
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K U N D F E R N S E H E N ¡ B f t j |r a d i o JANUAR «fl SEITE 1976 1 1-6 -teievision 1 MITTEILUNG AUS DSM VEB STERN-RADIO SONNEBERG KOMBINAT STERN-RADIO BERLIN nach den gültigen Unterlagen
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211/BC
tesla potentiometer
sy320
service Tesla B 100
TESLA
AM -piezofilter
say 30
t197
transistoren von tesla
service-mitteilungen
sy 200
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Tesla
Abstract: SBV525 RHY19 tesla semiconductor asco Q61708 tesla b 100
Contextual Info: R H Y 19, SBV525 Hall probes for small air gaps Hall-effect device RHY 19 and SBV 525 are designed for magnetic field measure ments in extremely narrow air gaps semiconductor material InAs . Hall voltage leads: blue tubing; control current leads: red tubing.
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RHY19,
SBV525
RHY19
Q61708-Y19
Q64099-V
Tesla
SBV525
tesla semiconductor
asco
Q61708
tesla b 100
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Tesla
Abstract: SV210 TESLA 110 SV230S SV230 YV20 tesla b 100
Contextual Info: SV 210, SV 230 S Hall signal probes w ith vapour-deposited layer SV 210, SV 230 S are medium sensitivity Hall devices with a relatively small tem perature coefficient. Within the linear region they may be used as multipliers, outside in control and regulating circuits semiconductor material InAs - vapour-deposited
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SV210,
Q64021-S210
Q64021-S230
150mA
V20-f
SV210_
SV230S
V10/B
500mA
Tesla
SV210
TESLA 110
SV230S
SV230
YV20
tesla b 100
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FP17D500E
Abstract: 500E D500E 104Gauss magneto resistor
Contextual Info: FP17D 500E Magneto resistor F P 1 7 D 5 0 0 E is a magneto resistor made of indium antimonide — nickel antimonide w ith a basic resistance R0 of 500 i l The " D " material produces the largest resistance change R B/R0 in the magnetic field. The temperature coefficient TC, however, is
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FP17D500E
Q65017-D
500-E
FP17D500E
500E
D500E
104Gauss
magneto resistor
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PDF
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MAGNETIC HEAD circuit
Abstract: Tesla DY19 R5924 Quantum Photonics DY17
Contextual Info: PHOTOMULTlPLlER TUBE R5924 For the Operation in High Magnetic Field over 1 Tesla 51mm 2 Inch Head–on, Fast Time Response, High Pulse Linearity Fine Mesh Dynodes, 19–stage, Bialkali Photocathode GENERAL Description/Value 300 to 650 420 50 Bialkali 39 Borosilicate glass
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R5924
S-164-40
TPMH1135E02
MAGNETIC HEAD circuit
Tesla
DY19
R5924
Quantum Photonics
DY17
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FP30D250E
Abstract: Q65030-D magneto resistor tesla 104Gauss Q6503
Contextual Info: FP30D 250E Magneto resistor F P 3 0 D 2 5 0 E is a magneto resistor made of indium antimonide — nickel antimonide with a basic resistance /?0 of 250 fl. The " D " material produces the largest resistance variation /?B//?0 in the magnetic field. The temperature coefficient TC, however, is
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FP30D250E
FP30D250E
Q65030-D
250-E
magneto resistor
tesla
104Gauss
Q6503
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PDF
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DY12
Abstract: Tesla R554 DY11 DY19 R5542 DY1216
Contextual Info: PHOTOMULTlPLlER TUBE R5542 For an Operation in High Magnetic Fields over 1 Tesla 76mm 3 Inch Head–On, Fast Time Response, High Pulse Linearity 19–stage Fine Mesh Dynodes, Bialkali Photocathode GENERAL Description / Value 300 to 650 420 50 Bialkali 64
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R5542
S-164-40
TPMH1099E03
DY12
Tesla
R554
DY11
DY19
R5542
DY1216
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FP30N60E
Abstract: FTP100 Q6503 30N60 ftp-100 30 N 60
Contextual Info: FP 30 N 60 E Magneto resistor F P 3 0 N 6 0 E is a m agneto resistor made of indium antimonide — nickel antimonide with a basic resistance R 0 of 6 0 fi. In case of " N " material the temperature coefficient TC and the relative resistance variation R B/R 0 in the magnetic field are
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FP30N60E
Q65030-N
30-z--â
FP30N60F
0TIF70
ftp-100
FTP100
Q6503
30N60
30 N 60
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bu2527af
Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
Contextual Info: Pøehled diskrétních polovodièových souèástek TESLA a dalích dováených typù z nìkdejí RVHP TRANZISTORY TYRISTORY TRIAKY DIAKY DIODY LED DISPLEJE OPTOÈLENY a dalí prvky
spolu s náhradami
a nejpouívanìjí standardní
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roku1984/85,
VQB200
VQB201
VQC10
VQE11
VQE12
VQE13
VQE14
VQE21
VQE22
bu2527af
wk16412
WK16413
WK16414
Tesla katalog
VQE24
4DR823B
kr206
5DR801B
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q64021-s210
Abstract: YV20 SV210 lineal SV230S Hall 300 SV230 R20N
Contextual Info: SV 210, SV 230 S Hall signal probes w ith vapour-deposited layer S V 2 1 0 , SV 2 3 0 S are medium sensitivity Hall devices w ith a relatively small te m perature coefficient. W ith in the linear region they may be used as multipliers, outside in control and regulating circuits sem iconductor material InAs - vapour-deposited
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SV210,
Q64021-S210
Q64021-S230
V20/S
150mA
V20-f
SV210_
SV230S
YV20
SV210
lineal
SV230S
Hall 300
SV230
R20N
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magneto resistor
Abstract: FP30L50E 30L50 Q65030-L50-E
Contextual Info: FP 30 L 50 E Magneto resistor F P 3 0 L 5 0 E is a magneto resistor made of indium antimonide — nickel antimonide with a basic resistance R 0 of 50 0 . The " L " material has a smaller temperature coefficient TC and a lower relative resistance variation R B/R0 in the magnetic field
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FP30L50E
Q65030-L50-E
FP30L50E
magneto resistor
30L50
Q65030-L50-E
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PDF
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G005
Abstract: FP17L200J magneto resistor
Contextual Info: F P 1 7 L 200J M agne to resistor F P 1 7 L 2 0 0 J is a magneto resistor made of indium antimonide — nickel antimonide with a basic resistance R 0 of 200 fi. The " L " material has a smaller temperature coefficient TC and a lower relative resistance variation R B/ R 0 in the magnetic field
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FP17L
FP17L200J
Q65017-L200-J
FP17L200J
G005
magneto resistor
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REMA
Abstract: granat 216 Sonneberg DIODE ga TESLA transistor Kombinat VEB A 301 transistor KF 507 tesla 516 maa 550 service-mitteilungen
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R I E V E R T R I E B R U N D F U N K U N D F E R N S E H E N JUL./AUG. 19 7 6 m SEITE 01-10 inämiy 1R A D io -teievlsion 1 GRANAT 516 Ein Exponat der Leipziger Frühjahrsmesse 1976, das in einer kleinen Menge noch im III. Quartal an den Handel ausgeliefert wird, war die
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Param24
52/PS
REMA
granat 216
Sonneberg
DIODE ga
TESLA transistor
Kombinat VEB A 301
transistor KF 507
tesla 516
maa 550
service-mitteilungen
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