TESLA 1 Search Results

KF 517

Abstract: transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND FE R N SE H E N piy!E§HÜ [r a d io -television] APRIL 1976 S5ITS 1-8 SHJLENBANDGERÄT "B 90” TESLA - .B 90" Zu den Importen bei Spulentonbandgeräten wird künftig auch das TESLA-Erzeugnis "B 90"

TESLA BP 4651

Abstract: tesla bm 388e TESLA TESLA BM 429 4090 dm hf nu bp 4490 BM 445E BP4650 tesla transistoren TESLA BS 488 ELEKTROMAGNET MIT STABILISIERTEM
Contextual Info: Fertigungssortiment ELEKTRONISCHE MESSGERÄTE ELEKTRONENMIKROSKOPE NMR SPEKTROMETER EINHEITLICHE KLASSIFIKATION: FACHGEBIET391 TESLA BRNO NATIONALUNTERNEHMEN INHALT 39111 - ELEKTRONISCHE MESSGERÄTE FÜR SPANNUNGEN UND ABGELEITETE GROSSEN K L A S S IF IK A T IO N

gm04

Abstract: gaussmeter probe MN1604 Duracell MN1604 Hall probe
Contextual Info: GM04 Specifications Auto Ranging And Manual Ranging Range Range Range Range 1:0 - to more than 3 Tesla resolution 1 milliTesla. 2: 0 - 299.9 milliTesla resolution 100 microTesla. 3: 0- 29.99 milliTesla resolution 10 microTesla. 4: 0- 2.999 milliTesla resolution 2 microTesla.

service Tesla B 100

Abstract: Lautsprecher LP service-mitteilungen Radio Fernsehen Elektronik VEB Keramische Werke servicemitteilungen GER-A keramische Werke Hermsdorf VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN service tesla
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEH EN 9 != ! r a d i o -television SEITE AUSGABE: JUNI 1 - Das Vollstereo-Tonbandgerät TESLA B 100 zählt zu den Im­ porten des Jahres 1974• Das Gerät ist als Spulen-Bandgerät konzipiert und verfügt über zwei

servicemitteilungen

Abstract: service-mitteilungen "service-mitteilungen" RFT service-mitteilungen RFT Information Mitteilung VEB RFT mitteilung aus dem veb rft Tesla Leipzig servicemitteilungen rft
Contextual Info: SERVICE-MITTEILUNGEN VEB I N D U S T R I E V E R T R 'E B RU ND FU NK UNO FER NS EH EN — i1rapio -television AUSGABE: A 1985 S e ite 1-2 Mitteilung aus den VEB RFT Industrie vertrieb Potsdam / EG 1. Zentrale Reparatur von Motoren aus TESLA-Spulentonbandgeräten

KFY46

Abstract: kuy12 KFY34 KFY18 kfy16 TESLA NU 73 TESLA tranzistory KSY21 KSY34
Contextual Info: TECHNICKÉ ZPRÁVY KREMÍKOVÉ TRANZISTORY KREMÍKOVÉ TRANZISTORY PRO PRÚMYSLOVÉ POUZITÍ T E I LA ROZNOV R 0 2 N 0 V P O D RA D H O STËM TECHNICKÉ ZPRÂVY • KREMÍKOVÉ TRANZISTORY TESLA TECHNICKÉ ZPRAVY K R E M ÍK O V É TRANZISTORY KREMÍKOVÉ TRANZISTORY

Katalog tesla tranzistor

Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
Contextual Info: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA

Contextual Info: High-Performance Handheld Gauss Meters ߜ ߜ ߜ ߜ ߜ HHG-20 Series $ 745 Basic Unit True RMS Min/Max Hold Rugged Up to 30 kG 1% Accuracy MADE IN USA Electronics Only Specifications Model Number Basic Accuracy Frequency Bandwidth: Sampling (dc Mode): Ranges:

TESLA transistor

Abstract: ugn3040 UGN-3040
Contextual Info: ADVANCE INFORMATION TL3040C SILICON HALL EFFECT SWITCH D 2903, O CTO BER 1985 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Standard Bipolar Technology Minimizes ESD Susceptibility • lOL - • • 20 mA Min at V o l = 0-4 V

TL3019

Abstract: TESLA transistor TL3019C UGN3019 D2903 Tesla sensor
Contextual Info: TL3019C SILICON HALL EFFECT SWITCH D2903, JULY 1 9 8 5 — REVISED APRIL 1988 Magnetic-Field Sensing Hall-Effect Input LU P A C K A G E TOP VIEW On-Off Hysteresis • Small Size • Standard Bipolar Technology Minimizes ESD Susceptibility • Io l • • ■ 20 mA Min at V o L “ 0-4 V

SV110

Abstract: Q64021 TESLA 110 S110S hall TESLA 3D Hall device
Contextual Info: SV110 Hall signal probe w ith vapour-deposited layer S V 1 1 0 is a high sensitivity, high internal resistance Hall device for application in control and regulating circuits semiconductor material InSb — vapour-deposited layer . Terminals: Hall voltage red; control current green; wire length 100 mm.

Lake Shore Cryotronics

Abstract: TG-120-CU IMI-7031 tesla Diode GaAlAs Diode AT 330 magnetic diode sensor TG-120 DIODE 4d replacement TG-120PL
Contextual Info: 1-12 TG-120 Gallium-Aluminum-Arsenide Diodes Series TG-120 Gallium-Aluminum-Arsenide Diodes* • GaAlAs Diodes • • Voltage-temperature characteristics are monotonic over the useful temperature range from 1.4 K to 500 K. Excellent sensitivity dV/dT at temperatures

Contextual Info: TL173I, TL173C LINEAR HALL-ELLECT SENSORS D2526, MARCH 1979-REVISED APRIL 1988 • Output Voltage Linear with Applied Magnetic Field • Sensitivity Constant Over Wide Operating Temperature Range • Solid-State Technology • Three-Terminal Device • Senses Static or Dynamic Magnetic Fields

Tesla

Abstract: SV210 TESLA 110 SV230S SV230 YV20 tesla b 100
Contextual Info: SV 210, SV 230 S Hall signal probes w ith vapour-deposited layer SV 210, SV 230 S are medium sensitivity Hall devices with a relatively small tem­ perature coefficient. Within the linear region they may be used as multipliers, outside in control and regulating circuits semiconductor material InAs - vapour-deposited

Ferroxcube 3C8

Abstract: 204T250-3C8 pulse transformer driver ic Amp. mosfet 1000 watt MPS-U10 application note gate driver for h bridge mosfet core 3c8 U 126 204T250 ac step-up transformer winding awg
Contextual Info: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive

Ferroxcube 3C8

Abstract: U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note
Contextual Info: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive

Contextual Info: 4”peripheral turbine submersible pump series IDEA2 PERFORMANCE CURVES AND DATA DIMENSIONS AND WEIGHTS LENGTH mm WEIGHT Kg Pump Diam IDEA2 75 355 8,0 95 mm IDEA2 100 385 9,3 95 mm IDEA2 75 IDEA2 100 60 50 40 Head/mt 30 20 10 5 10 15 20 25 30 35 40 45 50 Lt/min

tesla coil

Abstract: tesla mh ETON cx280 cx 280
Contextual Info: ETON Datasheet ATB Type: CX 280 V No. 1.6300.04 Date: 17.12.2002 Technische Daten Nennimpedanz Technical Data Nominal impedance Symbol Zn Wert/Value 4 Einh./Unit Ω Gleichstromwiderstand DC resistance Re 3,5 Ω Resonanzfrequenz Resonance frequency fr 300 / 1180

Tesla

Abstract: SBV595 Hall 300 Q64099
Contextual Info: SBV595 Hall field probe The field probe SBV 595 w ith an epitaxial semiconductor layer of GaAs is particularly suitable for precision measurements of magnetic fields. The cross-shaped Hall chip ensures a particularly small linearization error. •^electrical system

BO-15

Abstract: R114665
Contextual Info: TECHNICAL DATA SHEET 1/2 R114.665.107 R/A MALE RECEPTACLE FOR PCB Series : SMB SOLDER LEGS NON MAGNETIC All dimensions are in mm. . pn . ao COMPONENTS MATERIALS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - NON MAGNETIC BRONZE NON MAGNETIC BRONZE

tl3103

Abstract: TL3103C TL3103I D3184 Linear Hall-effect Sensor Toroid International
Contextual Info: TL3103I, TL3103C LINEAR HALL-EFFECT SENSORS D3184, MAY 1 98 5 -REVISED FEBRUARY 1989 LU PACKAGE TOP VIEW Output Voltage Linear with Applied Magnetic Field Sensitivity Stable Over Wide Operating Temperature Range V CC Buried Hall Cell Reduces Changes Due to

Q64001

Abstract: FA22e EA218 f22e Hall 22e Q64001-F22E Tesla
Contextual Info: EA218, FA 22e Insertion probe EA218, Field probe FA22e E A 218 and F A 2 2 e are Hall generators suitable for measuring AC and DC fields semiconductor material InAs . EA 218 Hall voltage leads: red/yellow, control current leads: green/violet (In mounting the top face (seat of electrode) must be insulated)

SMB jack

Abstract: R114.313.197
Contextual Info: TECHNICAL DATA SHEET 1/2 NON MAGNETIC STRAIGHT BULKEAD JACK FRONT MOUNT R114.313.197 Series : SMB CRIMP TYPE - CABLE 2.6/50+75 S All dimensions are in mm. . pn . ao COMPONENTS MATERIALS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - NON MAGNETIC BRONZE

1039 D

Contextual Info: TECHNICAL DATA SHEET 1/2 NON MAGNETIC RIGHT ANGLE PLUG CRIMP TYPE R114.186.197 Series : SMB CABLE 2.6/50+75 S All dimensions are in mm. . pn . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - MATERIALS BRONZE BERYLLIUM COPPER