TEMIC TCST Search Results

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

TCST1000

Abstract: TCST-2000
Contextual Info: Temic Semiconductors TCST1000/2000 Optoelectronic Interrupter with Aperture Description This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nni. The detector

tfk4

Abstract: TCST1030
Contextual Info: Temic TCST1030 L Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector

tfk4

Contextual Info: Temic TCST1030 L Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector

TCST2103

Abstract: TCST2202 TCST2300
Contextual Info: Temic Semiconductors TCST110. up to TCST230. Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector

Contextual Info: Temic Semiconductors TCST1230 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located facel-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

TCST-2000

Abstract: TCST1000
Contextual Info: Temic S e m i c o n d u c t o r s TCST1000/2000 Optoelectronic Interrupter with Aperture Description The TCST1000/TCST2000 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

1KWO

Contextual Info: Temic TCST1230 S e m i c o n d u c t o r s Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located facel-to-face on the same optical axis. The operating

Contextual Info: Temic TCST5123 S e m i c o n d u c t o r s Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating

tfk4

Abstract: temic tcst telefunken tcst
Contextual Info: Temic TCST1030 S e m i c o n d u c t o r s Transmissive Optical Sensor with Phototransistor Output Description T his device has a com pact construction w here the em itting-light sources and the detectors are located faceto-face on the sam e optical axis.

Contextual Info: Temic TCST1230 S e m i c o n d u c t o r s Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face 1-to-face on the same optical axis. The operating

Tcst1000

Contextual Info: Temic S e m i c o n d u c t o r s TCST1000/2000 Optoelectronic Interrupter without Aperture Description This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector

TCST2103

Abstract: temic tcst TCST2202 transistor 010C tcst1103 transistor j 201
Contextual Info: Temic Semiconductors Optical Sensors Reflective Optical Sensors with Transistor Output j Package Part Number _|_ | IReflective Optical Sensors CTR @ IF Ic mA % >0.3 > 1.5 1 ««A Characteristics ;V<8SJC8Q @ 1 tnA V V£#jgt @ % «odlc V j mA j mA CNY70 A TCRT1000b>

4N35-37

Abstract: TELEFUNKEN 862 4N36 TEMIC
Contextual Info: Temic 4N35-37 S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The 4N35/ 36/ 37 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a

TCST1030

Abstract: Telefunken Phototransistor
Contextual Info: TCST1030 TELEFUNKEN Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light sources and the detectors are located face to face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor.

TCST2000

Abstract: TCST-2000 TCST1000 Telefunken Phototransistor
Contextual Info: TCST1000/TCST2000 TELEFUNKEN Semiconductors Optoelectronic Interrupter with Aperture Description The TCST1000/TCST2000 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages. The elements are mounted on one leadframe in coplanar

TCST1230

Contextual Info: TCST1230 TELEFUNKEN Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light sources and the detectors are located face to face on the same optical axis. The operating wavelength is 950

TCST5133

Abstract: TCST5123
Contextual Info: TELEFUNKEN Semiconductors TCST5123/TCST5133 Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting light sources and the detectors are located face to face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

TCST1103

Abstract: TCST2103 TCST2202 TCST110 TCST1202 TCST1300 TCST230 TCST2300
Contextual Info: TELEFUNKEN Semiconductors TCST110. up to TCST230. Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light sources and the detectors are located face to face on the same optical axis.

Telefunken Phototransistor

Abstract: TCST1230
Contextual Info: TCST1230 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face1–to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Telefunken Phototransistor

Abstract: TCST1030 TCST1030L
Contextual Info: TCST1030 L Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector

TCST1000

Abstract: TCST2000 Telefunken Phototransistor TCST-2000
Contextual Info: TCST1000/2000 Optoelectronic Interrupter with Aperture Description This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector

Telefunken Phototransistor

Abstract: all phototransistor TCST5123
Contextual Info: TCST5123 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Telefunken Phototransistor

Abstract: TCST5123
Contextual Info: TCST5123 Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Due to the special construction, the depth of the