TELEFUNKEN TCST Search Results

ir photodetector

Abstract: CNY70 TCNT1000 TCPT1200 TCPT1200X01 TCRT1000 TCRT1010 TCRT5000 TCRT5000L TCSS1100
Contextual Info: Vishay Telefunken Packing and Order Information Part Number MOQ* pcs per Tube CNY70 TCNT1000 TCPT1200 TCPT1200X01 TCRT1000 TCRT1010 TCRT5000 TCRT5000L TCSS1100 TCSS2100 TCST1000 TCST2000 TCST1030 TCST1030L TCST1103 TCST1202 TCST1210 TCST1230 TCST1300 TCST2103

NPN Silicon Phototransistor

Abstract: L219
Contextual Info: TELEFUNKEN ELECTRONIC ]> ÛRSGO'ît. 0D07Ô55 4 • AL66 TCST 5100 ITltLiFOilKIKiKl electronic Creative Techoologies Optoelectronic Interrupter Construction: Emitter: GaAs-IR-Emitting Diode Detector: Silicon NPN Epitaxial Phototransistor Applications: Contactless optoelectronic switch, control and counter

TCST1103

Abstract: TCST2103 TCST2202 TCST110 TCST1202 TCST1300 TCST230 TCST2300
Contextual Info: TELEFUNKEN Semiconductors TCST110. up to TCST230. Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light sources and the detectors are located face to face on the same optical axis.

TCST1202A

Abstract: TCST230 TCST110 TCST1103 TCST1103A TCST1300A TCST2103 TCST2103B TCST2202B TCST2300B
Contextual Info: TCST110. up to TCST230. Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating

Contextual Info: TCST110. up to TCST230. Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating

Contextual Info: TCST5123 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm.

TCST1103

Abstract: TCST1103A TCST2103 tcst2103b TCST110 TCST1202A TCST1300A TCST2202B TCST230 TCST2300B
Contextual Info: TCST110. up to TCST230. Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating

TCST1230

Contextual Info: TCST1230 TELEFUNKEN Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light sources and the detectors are located face to face on the same optical axis. The operating wavelength is 950

Telefunken Phototransistor

Abstract: TCST5123
Contextual Info: TCST5123 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm.

Telefunken Phototransistor

Abstract: TCST5123
Contextual Info: TCST5123 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm.

TCST2000

Abstract: A15134 TCST-2000
Contextual Info: TCST1000/ TCST2000 Vishay Telefunken Transmissive Optical Sensor without Aperture Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector

Telefunken Phototransistor

Abstract: TCST1030 TCST1030L
Contextual Info: TCST1030 L Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector

TCST1030

Contextual Info: TCST1030 L Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector

TCST2000

Abstract: TCST-2000 TCST1000 tcst1000a Telefunken Phototransistor
Contextual Info: TCST1000/ TCST2000 Vishay Telefunken Transmissive Optical Sensor without Aperture Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector

TCST1030

Abstract: Telefunken Phototransistor TCST1030L
Contextual Info: TCST1030 L Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector

LA 4301

Abstract: TCST 2301 telefunken tcst LA+4301
Contextual Info: TELEFUNKEN ELECTRONIC 'm u ‘ifiD IFlDKlKiK] electronic ÖTBDD^b QDQ7ÖM7 5 H i ALGG D TCST 110. up to TCST 430. r * y / - CreativeTéchnotogìes 7? Optoelectronic Interrupter with Aperture Construction: Emitter: GaAs-IR-Lumineszenzdiode Detector: Silicon NPN Epitaxial Phototransistor

TCST2000

Abstract: TCST-2000 TCST1000 Telefunken Phototransistor
Contextual Info: TCST1000/TCST2000 TELEFUNKEN Semiconductors Optoelectronic Interrupter with Aperture Description The TCST1000/TCST2000 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages. The elements are mounted on one leadframe in coplanar

Contextual Info: TCST1210 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Telefunken Phototransistor

Abstract: TCST1230
Contextual Info: TCST1230 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Contextual Info: TCST1210 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Contextual Info: TCST1230 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Telefunken Phototransistor

Abstract: TCST1230
Contextual Info: TCST1230 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Contextual Info: TCST5250 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Telefunken Phototransistor

Abstract: TCST5250
Contextual Info: TCST5250 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a