TELEFUNKEN RR 100 Search Results

CA6V

Contextual Info: B atte rie rö h re d ire k t g eh eizt TELEFUNKEN T 113 Ele k tro m e te rrö h re 3 100 uf lf Heizspannung Heizstrom V mA Thorierte W olfram -Kathode Norm aler Arbeitspunkt 10 10 ua Anodenspannung Raumladegitterspannung Gittervorspannung Anodenstrom Steilheit

high power fast recovery diodes 5 ns

Abstract: telefunken rr 200
Contextual Info: BYT08P/1000A TELEFUNKEN Semiconductors Fast Recovery Silicon Power Rectifier Features D Multiple diffusion D Mesa glass passivated D Low switch on power losses D Good soft recovery behaviour D Fast forward recovery time D Low reverse current D Very low turn on transient peak voltage

telefunken rr 200

Contextual Info: BYT12P/1000A TELEFUNKEN Semiconductors Fast Recovery Silicon Power Rectifier Features D Multiple diffusion D Mesa glass passivated D Low switch on power losses D Good soft recovery behaviour D Fast forward recovery time D Fast reverse recovery time D Low reverse current

Contextual Info: BYT08P/1000A Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Mesa glass passivated Low switch on power losses Good soft recovery behaviour Fast forward recovery time Low reverse current Very low turn on transient peak voltage

Contextual Info: BYT12P/1000A Fast Recovery Silicon Power Rectifier Features D D D D D D D D D Multiple diffusion Mesa glass passivated Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very low turn on transient peak voltage

Contextual Info: BYT12P/1000A Vishay Telefunken Super Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very low turn on transient peak voltage

9399

Abstract: telefunken rr 200
Contextual Info: BYT12P/1000A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very low turn on transient peak voltage

Contextual Info: BYT08P/1000A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Low reverse current Very low turn on transient peak voltage Very good reverse current stability at high temperature

Contextual Info: BYT08P/1000A Vishay Telefunken Super Fast Recovery Silicon Power Rectifier Features D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Low reverse current Very low turn on transient peak voltage

BUF672

Abstract: transistor BUF672
Contextual Info: BUF672 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

BUF725

Contextual Info: BUF725D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate

BUF725D

Contextual Info: _ BUF725D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate

Contextual Info: BUF653 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation

Contextual Info: BUF636A Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

TEA1007

Abstract: 1007 ignition triac control circuit diagram telefunken 1007 vinax
Contextual Info: Tem ic TEA1007 S e m i c o n d u c t o r s Simple Phase-Control Circuit Description The integrated circuit TEA 1007 is designed as a general phase-control circuit in bipolar technology. It has an internal supply voltage limitation. With typical 150 mA ignition pulse, it is possible to determine the phase shift

Contextual Info: BUF650 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

SR 13009

Abstract: E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2
Contextual Info: Tem ic TE13008 • TE13009 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Power dissipation Pu,| = 100 W • Glass passivation • Short switching times Applications Electronic lamp ballast circuits

Contextual Info: BUD630 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

A65 smd transistor

Abstract: transistor smd za
Contextual Info: BUD700D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate •

Contextual Info: BUF630 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

telefunken rr-100

Abstract: DTS-32
Contextual Info: T em ic BYT08P/1000A S e m i c o n d u c t o r s Fast Recovery Silicon Power Rectifier Features • Multiple diffusion • Mesa glass passivated • Low switch on power losses • Good soft recovery behaviour • Fast forward recovery time • Low reverse current

BUF630

Contextual Info: _ BUF630 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses

Contextual Info: BUF620 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation

BUF650

Abstract: NPN HIGH VOLTAGE SWITCHING
Contextual Info: _ BUF650 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses