TELEFUNKEN* U 111 B Search Results

TELEFUNKEN* U 111 B

Contextual Info: fllC D TELEFUNKEN ELECTRONIC • fl^EDOHb 000301b ? U 2342 B _ 7 * 0 - f 7 Monolithic Integrated Circuit Application ¡.Phase Locked Loop PLL FM Stereo Multiplex for portable and headphone radios (3 V) Features: • Small installed area and

telefunken ta 350

Abstract: One-chip telephone IC U2740B U2740B-BFP
Contextual Info: TEM,C U2740B S e m i c o n d u c t o r s UHF AM/FM Transmitter Description The U2740B-B is an one-chip multi-purpose UHF ASK/FSK transmitter IC designed for various applica­ tions within a wide frequency range. When a Chip-Select CS signal is supplied, the IC starts operation (Power-up,

kl SN 102 94-0

Abstract: WV2 marking marking WV2 Q 371 Transistor BFQ67WI
Contextual Info: TEMIC BFQ67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain

Contextual Info: Tem ic TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T -P A plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs X=950nm and

U2343B

Abstract: u 2343 b
Contextual Info: m : . . . _ _ filC D TELEFUNKEN ELECTRONIC ûTSQGTb 0Q03Ô57 T U 2343 B •¡TSiLIIFttSMKINl electronic Crtitwt ■ftehootog»« ■ _V 7 7 - 0 ^ - 0 9 Monolithic Integrated Circuit Application: Phase Locked Loop PLL FM Stereo Multiplex for portable and car radios

sl2 357

Abstract: ML 1557 b transistor transistor MW 882
Contextual Info: Temic BFP93AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency

LA 4301

Abstract: TCST 2301 telefunken tcst LA+4301
Contextual Info: TELEFUNKEN ELECTRONIC 'm u ‘ifiD IFlDKlKiK] electronic ÖTBDD^b QDQ7ÖM7 5 H i ALGG D TCST 110. up to TCST 430. r * y / - CreativeTéchnotogìes 7? Optoelectronic Interrupter with Aperture Construction: Emitter: GaAs-IR-Lumineszenzdiode Detector: Silicon NPN Epitaxial Phototransistor

transistor LC 945

Contextual Info: Temic S852TW Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage

Contextual Info: Te mic BF979 S e m i c o n d u c t o r s Silicon PNP RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features • High cross modulation performance

BPW77B

Abstract: BPW77A BPW77 bpw 50 bpw 41 Telefunken Electronic BPW76A u 110 telefunken BPW 64 bpw 75
Contextual Info: TELEFUNKEN ELECTRONIC i 17E D • OOOfiMbM S BPW 76 • BPW 77 ‘DTiSOJUFtlij&aCSI&fl electronic Cr*atN*f*chnûJoçj*s Silicon NPN Epitaxial Planar Phototransistors Applications! Detector in electronic control and drive circuits Features: • Hermetically sealed case

transistor Bf 966

Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
Contextual Info: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners

Telefunken u 208 b

Abstract: U208B TELEFUNKEN* U 111 B u111b 146 telefunken telefunken 1007 VS U 208 B u208 triac control 8-pin tea1007
Contextual Info: TELEFUNKEN Semiconductors U 208 B / U 208 B–FP Phase Control Circuit – General Triac Control with Retrigger Technology: Bipolar Features D Automatic retriggering D Triggering pulse typ. 125 mA D Voltage and current synchronisation D Internal supply voltage monitoring

U2432B

Contextual Info: b 1 . . . TELEFUNKEN ELECTRONIC filC D • SSSDOTb 0DD3ÔE3 4 U 2432 B ■¡FKLIIFtUNlKniMelectronic CrMtfMÜKhnofogitt 1^1*4 O S O Monolithic Integrated Circuit Application: Dual Low voltage Power Amplifier, especially for portable radios and cassette players

Telefunken EL11

Abstract: EBC11 telefunken ef EF12 telefunken ra el11 telefunken s 150 telefunken ra 200 Telefunken el 11 telefunken EF12
Contextual Info: TELEFUNKEN EL 11 Endpentode Heizspannung Heizstrom 6 ,3 0,9 V o ltS i Amp. ? Ua 250 Volt U 92 250 Volt uf lf Betriebswerte: Anodenspannung Schirmgitterspannung Gittervorspannung Anodenstrom Schirmgitterstrom Schirmgitterdurchgriff Steilheit Innerer Widerstand

temic tuner module

Abstract: block diagram of black and white t.v receiver temic Tv tuner Diagram temic tuner block diagram of black and white t.v TDA4453 Telefunken u 116 u 111 telefunken ultra stable voltage reference TELEFUNKEN* U 111 B
Contextual Info: Tem ic TDA4453 S e m i c o n d u c t o r s Video IF Amplifier for Multistandard TV Receiver and VTR Appliances Technology: Bipolar Features • • Interference suppression • Standard B/G-L suitable, processes negatively and positively modulated IF-signals with equal polarity of

BY5271

Contextual Info: Tem ic BY527 S e m i c o n d u c t o r s Silicon Mesa Rectifier Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current capability Applications General purpose

FLASHER RELAY

Abstract: relay pin out diagram U6043B U6432B U6432B-FP flasher circuit Temic Semiconductors dip8 circuit diagram of flasher relay 8 pin 8 pin flasher relay IC U6043B
Contextual Info: Tem ic U6432B S e m i c o n d u c t o r s Flasher, 18-mQ Shunt, Extrem Low Power Consumption Description The U6432B is an advanced automotive flasher IC which provides lowest stand-by current. Its basic function is equal to the TEMIC flasher IC U6043B but current

Contextual Info: Temic BFR92AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency

TRANSISTOR D 2627

Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage

zo 107 NA P 611

Abstract: BFR96 L 0403 817 BFR96T
Contextual Info: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain

706 TRANSISTOR sot-23

Contextual Info: T r lu i r BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure •

Contextual Info: BAT86S Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Ti = 25°C Parameter

SOT-23 marking 717

Abstract: un 1044 Telefunken u 257
Contextual Info: Temic BFR92/BFR92R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

sl2 357

Abstract: ML 1557 b transistor telefunken P 152 MT a3 sot 343
Contextual Info: Temic BFP93A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency