TEL 839 B Search Results

Contextual Info: UNITED STATES INTERNATIONAL NEW ENG LAND/ KANSAS/MISSOURI/ AUSTRALIA JAPAN UPSTATE NEW Y ORK NEBRASKA Advanced Technology Marketing Tel: 508 458-0200 Fax: (508) 458-7990 Central Tech Sales Tel: (314) 831-4069 Fax: (314) 839-4686 Electronic Development Sales Pty.,

Contextual Info: 824 - 849 MHz REMEC Hybrid Amplifiers High Dynamic Range Electrical Specifications 1 : Parameter Specification Limit Temperature Frequency Range Small Signal Gain Gain vs. Temperature Gain Flatness Reverse Isolation VSWR Input Output 1 dB Compression Output Intercept Point

Contextual Info: UG432S6448JPG Data sheets can be downloaded at www.unigen.com 256M Bytes 32M x 64 bits SYNCHRONOUS DRAM MODULE PC100 sTSOP SDRAM Unbuffered SODIMM based on 16 pcs 16M x 8 SDRAM with LVTTL, 4 banks & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

DA6501

Abstract: TSSOP-16
Contextual Info: DA6501.001 27 October 2008 MAS6501 This is preliminary information on a new product under development. Micro Analog Systems Oy reserves the right to make any changes without notice. 16-Bit Analog-to-Digital Converter • Standby Current Consumption 0.1 µA

Contextual Info: TQM713024 Preliminary Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Features Functional Block Diagram Vcc1 RF In Vcc2 Input Match Output Match 1st Stage Vmode 2nd Stage GND GND 1 bit Bias Control InGaP HBT Technology • High Efficiency: 38% @ 28dBm

25C829

Abstract: 850C TQM713024 28dBm
Contextual Info: TQM713024 Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Features Functional Block Diagram • InGaP HBT Technology • High Efficiency: 38% @ 28dBm • Capable of running as 0-bit PA in low bias mode to 28dBm • Supports new chipsets with Vref@2.6V

B705

Abstract: B705A B402 D-71083 80KHZ
Contextual Info: XDSL SPLITTER FILTER MODULE SmartER series ISDN CO splitter for standard ADSL / VDSL2 applications LPF compliant with ETSI specification TS 101-952-1-3, v1.1.1 for both 2B1Q and 4B3T applications Part of a standard series which has footprint compatibility

AMI+729/829

Contextual Info: Surface Mount Multilayer Ceramic Capacitors SMD MLCCs for High Power Applications CBR Series, C0G Dielectric, Ultra High Q, Low ESR, 6.3 – 500 VDC (RF & Microwave) Overview KEMET’s CBR Series surface mount multilayer ceramic capacitors (MLCCs) in C0G dielectric feature a robust and

Contextual Info: TQM713024 Preliminary Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Features Functional Block Diagram • InGaP HBT Technology • High Efficiency: 38% @ 28dBm • Capable of running as 0-bit PA in low bias mode to 28dBm • Supports new chipsets with Vref@2.6V

EF30

Contextual Info: OPA6428URO Ultra Red LED Chip Ultra Bright GaAs/AlGaInP 1. Material Substrate GaAs N Type Epitaxial Layer AlGaInP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Forward Voltage Symbol Min

OPB1104

Contextual Info: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm

839 DIODE

Abstract: PIN PHOTO DIODE OPD0606 068mm DIODE 839
Contextual Info: Silicon PIN Photo Diode OPD0606 High Speed Sensitivity Common cathode type PIN Photo Diode 1. Structure unit : ㎛ 1.1 Chip Size : 0.68 X 0.68mm 1.2 Chip Thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size

OPA5923UYO

Contextual Info: OPA5923UYO Ultra Yellow LED Chip Ultra Bright GaAs/AlGaInP 1. Material Substrate GaAs N Type Epitaxial Layer AlGaInP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF

OPB0505P

Contextual Info: Silicon Photo Transistor OPB0505P 1. Structure 1.1 Chip Size : 0.50mm X 0.50mm 1.2 Chip thickness : 180±20um 1.3 Metallization : Top - Al, Bottom - Cr-Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 120 X 120um - Base : 60um X 60um 2. Electrical Characteristics

FIN-00381

Contextual Info: W O R L D W I D E _ R E P R E S E N T A T I V E S Europe_ A m ericas A u stria USA / Canada ABB Komponenten Ges. mbH Wienerbergstraße 11B A-1810 Wien Tel.: + 4 3 1 6 0 1 0 9 6153 Fax: + 4 3 (1 )6 0 1 0 9 8600

rs380s

Abstract: RS-380SH rs380sh RS-380SH-4045 RS-380S RS-380SH-12300 rs 380sh RS380 RS-380 at 627
Contextual Info: RS-380SH Typical Applications OUTPUT: APPROX 0.9W~40W Carbon-brush motors Home Appliances : Vacuum Cleaner Cordless Power Tools : Drill / Screwdriver VOLTAGE MODEL NO LOAD AT MAXIMUM EFFICIENCY SPEED CURRENT SPEED CURRENT TORQUE r/min A r/min A mN•m g·cm

Contextual Info: PSN0800A PHASE LOCKED LOOP 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: 858 621-2700 | FAX: (858) 486-1927 Rev A1 PHASE NOISE (1 Hz BW, typical) -20 -60 -100 -140 FEATURES • Frequency Range: 787 - 821 MHz • Step Size: 50 KHz • PLL - Style Package

Contextual Info: CLV0835E-LF PHASE NOISE 1 Hz BW, typical Rev A1 Voltage-Controlled Oscillator Surface Mount Module Applications • Test Equipment • VHF Communications • £(f) (dBc/Hz) 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927

Contextual Info: V585ME84-LF PHASE NOISE 1 Hz BW, typical Rev A1 Voltage-Controlled Oscillator Surface Mount Module Applications • Fixed Wireless • Test Instrumentation • £(f) (dBc/Hz) 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927

Contextual Info: CLV0835E 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev B2 £(f) (dBc/Hz) PHASE NOISE (1 Hz BW, typical) FEATURES 800 - 835 • Frequency Range: • Tuning Voltage: 0.5-4.5 Vdc • MINI-14S-L - Style Package

XF0506-S3

Abstract: S3 63 A XFMRS 1416
Contextual Info: XFMRS XFSMD3 SERIES INDUCTORS • • • • • • TRUE SURFACE MOUNT DESIGN ECONOMICAL, LOW COST SOLUTION TO YOUR POWER REQUIREMENTS CUSTOM VERSIONS AVAILABLE AT NO EXTRA COST TAPE AND REEL PACKAGING AVAILABLE LOW LOSS MPP CORE OR POWDERED IRON VERSIONS, BOTH STANDARD

Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general

C-Band Power GaAs FET

Contextual Info: FLC257MH-6 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-6 is a power GaAs FET that is designed for general

EUDYNA

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the