TEL 839 B Search Results

Contextual Info: UNITED STATES INTERNATIONAL NEW ENG LAND/ KANSAS/MISSOURI/ AUSTRALIA JAPAN UPSTATE NEW Y ORK NEBRASKA Advanced Technology Marketing Tel: 508 458-0200 Fax: (508) 458-7990 Central Tech Sales Tel: (314) 831-4069 Fax: (314) 839-4686 Electronic Development Sales Pty.,

Adapter

Contextual Info: SPARKLE POWER INT’L LTD. SPI FSP036-RAC 12V@3A CEC Level V Adapter Power Supply San Jose Office 1000 ROCK AVE. SAN JOSE, CA 95131 TEL: (408) 519-8888 FAX: (408) 519-9999 ATTN: SALES DEPT. L.A. Office 17071 Green Drive City of Industry, CA 91745 TEL: (626) 839-1124

PF0210

Abstract: BO 829 DSA003712 RX852 hitachi hd
Contextual Info: PF0210 MOS FET Power Amplifier Module for ADC Mobile Phone ADE-208-102E Z Preliminary 6th Edition July 1996 Features • High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK • Low input power: 0 dBm ave. Typ for π /4-DQPSK • Simple bias circuit • High speed switching: 8 µs Typ

Contextual Info: 824 - 849 MHz REMEC Hybrid Amplifiers High Dynamic Range Electrical Specifications 1 : Parameter Specification Limit Temperature Frequency Range Small Signal Gain Gain vs. Temperature Gain Flatness Reverse Isolation VSWR Input Output 1 dB Compression Output Intercept Point

Contextual Info: UG432S6448JPG Data sheets can be downloaded at www.unigen.com 256M Bytes 32M x 64 bits SYNCHRONOUS DRAM MODULE PC100 sTSOP SDRAM Unbuffered SODIMM based on 16 pcs 16M x 8 SDRAM with LVTTL, 4 banks & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

Contextual Info: 824 - 849 MHz REMEC Hybrid Amplifiers Low Noise Figure Electrical Specifications 1 : Parameter Specification Limit Temperature Frequency Range Small Signal Gain Gain vs. Temperature Gain Flatness Reverse Isolation VSWR Input Output 1 dB Compression Output Intercept Point

DA6501

Abstract: TSSOP-16
Contextual Info: DA6501.001 27 October 2008 MAS6501 This is preliminary information on a new product under development. Micro Analog Systems Oy reserves the right to make any changes without notice. 16-Bit Analog-to-Digital Converter • Standby Current Consumption 0.1 µA

TSSOP-16

Abstract: DA65
Contextual Info: DA6501.001 11 November, 2010 MAS6501 This is preliminary information on a new product under development. Micro Analog Systems Oy reserves the right to make any changes without notice. 16-Bit Analog-to-Digital Converter • Standby Current Consumption 0.1 µA

Contextual Info: Surface Mount Multilayer Ceramic Capacitors SMD MLCCs for High Power Applications CBR Series, C0G Dielectric, Ultra High Q, Low ESR, 6.3 – 500 VDC (RF & Microwave) Overview KEMET’s CBR Series surface mount multilayer ceramic capacitors (MLCCs) in C0G dielectric feature a robust and

Contextual Info: TQM713024 Preliminary Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Features Functional Block Diagram Vcc1 RF In Vcc2 Input Match Output Match 1st Stage Vmode 2nd Stage GND GND 1 bit Bias Control InGaP HBT Technology • High Efficiency: 38% @ 28dBm

25C829

Abstract: 850C TQM713024 28dBm
Contextual Info: TQM713024 Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Features Functional Block Diagram • InGaP HBT Technology • High Efficiency: 38% @ 28dBm • Capable of running as 0-bit PA in low bias mode to 28dBm • Supports new chipsets with Vref@2.6V

B705

Abstract: B705A B402 D-71083 80KHZ
Contextual Info: XDSL SPLITTER FILTER MODULE SmartER series ISDN CO splitter for standard ADSL / VDSL2 applications LPF compliant with ETSI specification TS 101-952-1-3, v1.1.1 for both 2B1Q and 4B3T applications Part of a standard series which has footprint compatibility

AMI+729/829

Contextual Info: Surface Mount Multilayer Ceramic Capacitors SMD MLCCs for High Power Applications CBR Series, C0G Dielectric, Ultra High Q, Low ESR, 6.3 – 500 VDC (RF & Microwave) Overview KEMET’s CBR Series surface mount multilayer ceramic capacitors (MLCCs) in C0G dielectric feature a robust and

6026

Contextual Info: EVERBOUQUET INTERNATIONAL CO., LTD. EVER CATCHER GROUP WE CATCH THE BEST TECH. FOREVER


   





          

      
       
     
 
 

Contextual Info: TQS - COMPANY PROPRIETARY INFORMATION SPEC TITLE: CDMA Cellular Band 3x3mm PAM SPEC NO: DAT.TQM713024 REV: E PAGE 0 OF 15 DATE 07-11-05 04-10-06 ECN# 29374 31912 C 04-27-06 32041 D 06-23-06 32655 E 07-05-06 32736 DESCRIPTION OF CHANGE Original Documentation K. Schoenrock

OPD3030

Abstract: ir10
Contextual Info: OPD3030 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY unit : ㎛ 1. Structure 1.1 Chip Size : 3.00mm X 3.00mm 1.2 Chip thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 160um X 160um

OPA5723YGO

Contextual Info: OPA5723YGO Yellow Green LED Chip Ultra Bright GaAs/AlGaInP 1. Material Substrate GaAs N Type Epitaxial Layer AlGaInP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF

EF30

Contextual Info: OPA6428URO Ultra Red LED Chip Ultra Bright GaAs/AlGaInP 1. Material Substrate GaAs N Type Epitaxial Layer AlGaInP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Forward Voltage Symbol Min

OPB1104

Contextual Info: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm

839 DIODE

Abstract: PIN PHOTO DIODE OPD0606 068mm DIODE 839
Contextual Info: Silicon PIN Photo Diode OPD0606 High Speed Sensitivity Common cathode type PIN Photo Diode 1. Structure unit : ㎛ 1.1 Chip Size : 0.68 X 0.68mm 1.2 Chip Thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size

OPB0462

Contextual Info: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um Ta=25℃

OPA5930UYO

Contextual Info: OPA5930UYO Ultra Yellow LED Chip Ultra Bright GaAs/AlGaInP 1. Material Substrate GaAs N Type Epitaxial Layer AlGaInP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF

OPB0422

Abstract: 839 transistor transistor 835
Contextual Info: Silicon Photo Transistor OPB0422 1. Structure 1.1 Chip Size : 0.415mm X 0.415mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 138um X 138um - Base : 70um X 70um Ta=25℃

ir10 diode

Abstract: OPD2020 839 DIODE
Contextual Info: OPD2020 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY unit : ㎛ 1. Structure 1.1 Chip Size : 2.00mm X 2.00mm 1.2 Chip thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 170um X 170um