TECHNOLOGY FIRST Search Results

Contextual Info: TECHNOLOGY BACKGROUND 3.0 Volt-only Page Mode Flash Memory Technology 2 3.0 Volt-only Page Mode Technology Background Introduction AMD, the technology leader in Flash memories, has developed a new generation of highperformance, single-power-supply flash memory devices. The Am29PL160C is the first page

Contextual Info: TECHNOLOGY BACKGROUND 3.0 Volt-only Page Mode Flash Memory Technology Back 2 3.0 Volt-only Page Mode Technology Background Introduction AMD, the technology leader in Flash memories, has developed a new generation of highperformance, single-power-supply flash memory devices. The Am29PL160C is the first page

"digital switching system"

Contextual Info: CAD Design Flows Development in a Cross-Platform Computing Environment Shesha Krishnapura, Computing Technology/Design Technology, Intel Corp. Ty Tang, Computing Technology/Design Technology, Intel Corp. Vipul Lal, Computing Technology/Design Technology, Intel Corp.

adsl splitter dslam circuit diagram

Abstract: D link adsl modem board flow switch water pump circuit diagram for 3 phase DSLAM structure HDSL Modem circuit diagram DSLAM board fiber dsl
Contextual Info: Integrated Device Technology ADSL ADSL System System Solutions Solutions Broadband Access Technology Integrated Device Technology Copyright 1997, Integrated Device Technology, Inc 1 1 1 Integrated Device Technology Possible Possible Services Services Over

daily expenses

Contextual Info: Budgets for Schools The real cost of technology A total cost analysis for technology will come as a surprise for many organizations. Rather than add more staff to support increased technology, schools can take • First, most school districts only provide

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Abstract: edram edram macro hfo2 edram nec Ta2O5 55nm
Contextual Info: 55-nanometer eDRAM Technology Optimizes Performance and Power Characteristics Technology Backgrounder September 2006 The industry’s first embedded DRAM eDRAM for the 55-nanometer (nm) technology node uses new materials configured in an innovative way to achieve the performance and power

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Abstract: Integrated Device Technology
Contextual Info: Integrated Device Technology IDT IDT ATM ATM Switching Switching Cost Effective Solutions Integrated Device Technology 1 1 Integrated Device Technology 88 Port Port 1.24 1.24 Gbps Gbps Switch Switch Integrated Device Technology 2 2 Integrated Device Technology

bit-slice

Contextual Info: Challenges of CAD Development for Datapath Design Tim Chan, Design Technology, Intel Corp. Amit Chowdhary, Design Technology, Intel Corp. Bharat Krishna, Design Technology, Intel Corp. Artour Levin, Design Technology, Intel Corp. Gary Meeker, Design Technology, Intel Corp.

Contextual Info: 762 Drive Technology Drive Technology Drive Technology The drive system for highly dynamic positioning tasks 763 Drive Technology 820 770 Digital Compact Servo Drives 790 Synchronous Servomotors Linear Servomotors 830 Compact Drive Technology 842 XTS eXtended Transport System

sram ecc

Abstract: silicon based sram SRAM
Contextual Info: Renesas Technology Announces Development of superSRAM, the Industry’s First Virtually Soft-Error-Free Low-Power-Consumption SRAM  New cell type, with a DRAM capacitor technology, results in an approximately 4digit reduction in soft error rate compared with previous Renesas Technology

Infineon shdsl chip set

Abstract: TC-PAM Modulation TC-PAM Line Driver SHDSL SHDSL shdsl transceiver trend chip dsl shdsl transmission adsl psd mask SHDSL Line Driver
Contextual Info: Next Generation Transmission Technology Infineon Technologies POTSWIRETM SHDSL Technology Next Generation Transmission Technology Infineon Technologies POTSWIRETM SHDSL Technology Sascha Lindecke, Marketing Manager, Infineon Technologies White Paper March 2000

MICRO USA Pressure Sensor

Contextual Info: REFERENCE AN D APPLIC ATIO N DATA Pressure and Force Sensors Piezoresistive Technology PIEZORESISTIVE TECHNOLOGY Background In the late 1950's, Honeywell’s Corporate Technology Center completed basic re­ search on the piezoresistive properties of silicon diffused layers. The first Honeywell

Industry Standard Architecture

Abstract: Am29Fxxx
Contextual Info: TECHNOLOGY BACKGROUND 3.0 Volt-only Flash Memory Technology 2 3.0 Volt-only Technology Background Introduction AMD’s Am29LVxxx 3.0 volt-only Flash memory technology shares all the architectural features of AMD’s industry-standard, 5.0 volt-only Am29Fxxx Flash memory technology.

Contextual Info: Technology introduction CHAPTER 13 1 Semiconductor process technology 1-1 Silicon process technology 1-2 Compound semiconductor process technology 2 Assembly technology 2-1 2-2 2-3 2-4 2-5 Packages for diverse needs Flip chip bonding Dicing Module products

toshiba nand flash 16Mb

Abstract: etox C1995 NM28F010 NM29N16 NOR FLASH AN920 NM28F040 NOR Flash read cycle AN-920 national
Contextual Info: INTRODUCTION Flash technology is basically an outgrowth of EPROM technology Toshiba first invented Flash technology in the mid 80’s Intel quickly developed its own version based on a simpler cell structure ETOX EPROM Tunnel Oxide Cells based on the ETOX structure are the basis for the majority

ferroelectric

Contextual Info: Technology Note FRAM Technology Backgrounder An overview of FRAM Technology – Updated Dec. 2000 Overview Figure 1. Perovskite Ferroelectric Crystal Established memory technologies are divided into two categories. First are nonvolatile memories. Traditionally, systems use them in read-only or readmostly applications since they are difficult to write.

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Contextual Info: TECHNOLOGY THE WORLD’S FIRST 4G-BIT DRAM AND NEW MULTILEVEL CIRCUIT TECHNOLOGY Yasuo Kobayashi / Takashi Okuda Trends in DRAM Technology and 4G-bit DRAM The memory cell size and chip size of DRAM announced to date at the ISSCC are shown in Figure 1. In each succeeding

Contextual Info: TECHNOLOGY BACKGROUND  9ROWRQO\ ODVK 0HPRU\ 7HFKQRORJ\ 2 1.8 Volt-only Flash Memory Technology Background ,QWURGXFWLRQ AMD’s flash technology leadership and innovation have produced a new generation of singlepower-supply flash memory devices. The Am29SL800B is the first of a new family of Super

underfill

Abstract: with or without underfill intel C4 package underfill for good adhesion and low viscosity Low viscosity underfill for flip chip microwave oven
Contextual Info: Simultaneous Chip-Join and Underfill Assembly Technology for Flip-Chip Packaging Tom Dory, Assembly Technology Development, Intel Corp. Kenji Takahashi, Japan Package Technology Development, Intel Corp. Tomomi Kume, Japan Package Technology Development, Intel Corp.

ATM transaction- ABSTRACT

Abstract: intel organisational structure ATM SYSTEM PROJECT- ABSTRACT "LDAP" "ISP" server
Contextual Info: Managing Enhanced Network Services: A Pragmatic View of Policy-Based Management John Vicente, Information Technology, Intel Corporation Harold Cartmill, Information Technology, Intel Corporation Glen Maxson, Information Technology, Intel Corporation Shelby Siegel, Information Technology, Intel Corporation

Contextual Info: Integrated Device Technology IDT IDT Routing Routing Solutions Solutions Integrated Device Technology 1 1 Integrated Device Technology Seven Seven Layer Layer Stack Stack Application Presentation Software Layers Session Transport Network Hardware Layers Integrated Device Technology

E2CMOS Technology

Abstract: E2CMOS Tunnel diode tunnel diode specifications floating-gate
Contextual Info: E2CMOS Technology tions on the process technology. By incorporating both grounded and pumped substrate techniques from NMOS technology with low power CMOS devices, Lattice’s E2CMOS technology maintains high performance while meeting the high voltage requirements of programming.

Willamette

Abstract: project transistor tester
Contextual Info: Intel Technology Journal Q1’99 Defect-Based Test: A Key Enabler for Successful Migration to Structural Test Sanjay Sengupta, MPG Test Technology, Intel Corp. Sandip Kundu, MPG Test Technology, Intel Corp. Sreejit Chakravarty, MPG Test Technology, Intel Corp.

chip die npn transistor

Abstract: 0.35um cmos transistor parameters
Contextual Info: Intel Technology Journal Q3’98 The Quality and Reliability of Intel’s Quarter Micron Process Krishna Seshan, Technology and Manufacturing Group, Intel Corp. Timothy J. Maloney, Design Technology, Intel Corp. Kenneth J. Wu, Technology and Manufacturing Group, Intel Corp.