TECHNOLOGY 80 Search Results

"12n80"

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

480b

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N80 Preliminary Power MOSFET 2A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a

8n80

Abstract: MOSFET 8N80 ua 471 TO-220-F1 8N80L-TA3-T 8N80G-TA3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state

7n80

Abstract: 7N80 TO220 7N80L-TF3-T 66a 523
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Preliminary Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

GPC81B1

Abstract: GPC500A1
Contextual Info: GPC81B1 80KB Sound Controller JUN. 28, 2007 Version 1.2 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS However, GENERALPLUS TECHNOLOGY INC. makes no warranty for any errors which may

UC 493

Abstract: 9N80
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N80 Preliminary Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a

GPL61A

Abstract: SPL61A
Contextual Info: GPL61A 80KB LCD Controller / Driver NOV. 05, 2009 Version 1.4 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS However, GENERALPLUS TECHNOLOGY INC. makes no warranty for any errors which may

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N80 Preliminary Power MOSFET 2 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N80 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum

underfill

Abstract: with or without underfill intel C4 package underfill for good adhesion and low viscosity Low viscosity underfill for flip chip microwave oven
Contextual Info: Simultaneous Chip-Join and Underfill Assembly Technology for Flip-Chip Packaging Tom Dory, Assembly Technology Development, Intel Corp. Kenji Takahashi, Japan Package Technology Development, Intel Corp. Tomomi Kume, Japan Package Technology Development, Intel Corp.

Contextual Info: SPL61A 80KB LCD Controller/Driver AUG. 13, 2001 Version 1.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.

Contextual Info: SPLC093C 26COM/80SEG Controller/Driver MAR. 29, 2004 Version 1.3 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.

Contextual Info: SPLC783A 16COM/80SEG Controller/Driver APR. 01, 2004 Version 1.3 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.

Flip-chip 1.8V SRAM

Abstract: 65nm 65nm sram CS200 CS100 CS200A cmos logic 90nm
Contextual Info: 65nm CMOS Technology, CS200 / CS200A Description As miniaturization of silicon devices progresses, Fujitsu provides the most competitive, world-class technology to ASIC and COT customers. Fujitsu's 65nm technology has shrunk gates by 25% when compared to the 90nm technology.

Contextual Info: SPLD803B 4 GS 160-ch SEG and 80-ch COM Driver MAR. 07, 2005 Version 1.1 Sunplus Technology reserves the right to change this documentation without prior notice. Information provided by Sunplus Technology is believed to be accurate and reliable. However, Sunplus Technology makes no warranty for any errors which may appear in this document.

18f67j50

Abstract: pic18f87j50 datasheet PIC18F87J50 RH063 PIC18F67J50 pmp* SRAM PIC18F65J50 PIC18F66J50 40 pin lvds header PIC18F6XJ5X
Contextual Info: PIC18F87J50 Family Data Sheet 64/80-Pin High-Performance, 1-Mbit Flash USB Microcontrollers with nanoWatt Technology 2007 Microchip Technology Inc. Preliminary DS39775B Note the following details of the code protection feature on Microchip devices: •

dpak mosfet motor control DC 12v

Contextual Info: QFET TM FQD17N08 / FQU17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

OXPCIE958

Abstract: oxPCIE958-FBAG OXPCIe954 windows xp, oxpcie958 256 BALL PLX FBGA
Contextual Info: OXFORD by PLX Technology OXPCIe958 Data Sheet DS-0048 April 28 2009 Website www.plxtech.com Technical Support www.plxtech.com/support PLX Technology, Inc. 2009. All Rights Reserved. April 28 2009 PLX Technology, Inc. OXPCIe958 Data Sheet © PLX Technology, Inc. 2009. All Rights Reserved. The information in this document is proprietary and confidential to

APQ03SN80AB

Abstract: MOSFET 800V 3A 800VVGS
Contextual Info: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

generalplus

Abstract: GPLD1080A GPLD2080A
Contextual Info: GPLD1080A 80 CHANNEL SEG/COM STN LCD DRIVER MAY 23, 2007 Version 1.3 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS

K612

Abstract: underfill FR4 epoxy dielectric constant 3.2 Dielectric Constant Silicon Nitride K810 FR4 substrate height and thickness ltcc chip fine line bga thermal cycling reliability
Contextual Info: Bourns Microelectronic Modules Packaging Solutions Device Mounting Technology Surface Mount Technology Surface mounting is still the most common and economical approach for many applications. Bourns® Microelectronic Module products offer the latest in surface mount technology:

VBO20

Abstract: VBO160-12NO7 vbo13 VBO19-12NO7 VBO20-08NO2 VBE55-12NO7 VBE26-06 FBS16-06SC vbo25-16 VBO36-08NO8
Contextual Info: Technology Page 1 of 4 1~ Rectifier Bridges Features: Blocking voltages: 800V - 1800V Id avg : 18A - 174A Package with screw terminals. Space and weight savings Isolation voltage 3000 V~. UL recognized Planar passivated chips. Utilize DCB technology Low forward voltage drop

Contextual Info: S PLD802A SP 80-Channel Pure Common LCD Driver Preliminary OCT. 03, 2001 Version 0.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable.

FQPF7N80

Contextual Info: QFET N-CHANNEL FQPF7N80 FEATURES BVDSS = 800V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area