CECL 006
Abstract: HD64411 tys 606 480 hitachi dma controller 1985 Hitachi DSA002720
Contextual Info: HD64411 Q2 Quick 2D Graphics Renderer User’s Manual SuperH RISC engine Peripheral LSI ADE-602-120 Rev. 1.0 7/9/99 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.
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hd64411ade-602-120cecl 006tys 606 480+2hitachi dma controller 1985hitachi dsa002720
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transistor 7133A
Abstract: tdi ccd E2V 7133A 7130a 1 equivalent 7130A TRANSISTOR ccd tdi binning TDI CCD 7133a 1 equivalent
Contextual Info: CCD30-11 Inverted Mode Sensor High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Advanced Inverted Mode Operation AIMO * Anti-blooming Readout Register
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ccd30-11transistor 7133atdi ccd e2v7133a+57130a 1 equivalent7130a transistorccd tdi binningtdi ccd7133a 1 equivalent
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CCD30-11
Abstract: 7133A S11071 CCD30 M-2011 tdi ccd E2V transistor 7133A
Contextual Info: CCD30–11 Open Electrode High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Open Electrode Structure for Enhanced Quantum Efficiency
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ccd30ccd30-117133as11071+3m-2011tdi ccd e2vtransistor 7133a
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tdi ccd E2V
Abstract: e2v ccd tdi ccd ccd tdi binning CCD30-11 7133A Scientific Imaging Technologies TDI ccd sensor
Contextual Info: CCD30-11 Deep Depletion Sensor High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Deep Depletion for Enhanced Infrared Sensitivity * Symmetrical Anti-static Gate Protection * Anti-blooming Readout Register
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ccd30-11ccd3011tdi ccd e2ve2v ccd+5tdi ccdccd tdi binning7133ascientific imaging technologiestdi ccd sensor
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e2v ccd
Abstract: tdi ccd E2V 7407a NOT GATE 7406 IC
Contextual Info: CCD30–11 Back Illuminated High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Back Illuminated Format for Enhanced Quantum Efficiency
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ccd30ccd30-11e2v ccdtdi ccd e2v+27407anot gate 7406 ic
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CCD42-10
Abstract: tdi ccd E2V TDI ccd sensor e2v CCD sensor
Contextual Info: CCD42-10 Inverted Mode Sensor High Performance AIMO CCD Sensor FEATURES * 2048 by 512 Pixel Format * 13.5 mm Square Pixels * Image Area 27.6 x 6.9 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Advanced Inverted Mode Operation AIMO *
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ccd42-10ccd42tdi ccd e2vtdi ccd sensor+1e2v ccd sensor
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7133A
Abstract: circuit diagram of 7436 ic transistor 7133A 7132A tdi ccd image sensor x-ray tdx 720 Scientific Imaging Technologies TRANSISTOR c 5578 B CCD62-06
Contextual Info: CCD62-06 Inverted Mode Sensor High Performance CCD Sensor FEATURES * 395 H by 578 (V) Pixel Format * 22 mm Square Pixels * Active Area 12.7 x 8.5 mm * Low Pixel Readout Noise * Visible Light and X-ray Sensitive * Uniform Response over Whole Image Area *
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ccd62-067133acircuit diagram of 7436 ictransistor 7133a+67132atdi ccdimage sensor x-raytdx 720scientific imaging technologiestransistor c 5578 b
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7133A
Abstract: 7130a 1 equivalent 7130A TRANSISTOR e2v ccd transistor 7135A CCD-Sensor for e2v transistor 7133A 7134C scientific imaging technologies 7132A
Contextual Info: CCD30–11 Open Electrode High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Open Electrode Structure for Enhanced Quantum Efficiency
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ccd30ccd30-117133a7130a 1 equivalent+87130a transistore2v ccdtransistor 7135accd-sensor for e2vtransistor 7133a7134cscientific imaging technologies7132a
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HD6417709
Abstract: cxa2075 HD6417709 SH3 MS4413DB01 MS7709SE01 Video-Decoder CXA2075M HD64412 HD64413A SH7709
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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kx14-140k5d1ms4413db01hd64413ahd6417709+7cxa2075hd6417709 sh3ms7709se01video-decodercxa2075mhd64412sh7709
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8C740
Abstract: CCD47-10
Contextual Info: CCD47-10 NIMO Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal * Image Area 13.3 x 13.3 mm * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register
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1000fps
Contextual Info: CCD39-01 Back Illuminated High Performance CCD Sensor FEATURES * 80 by 80 1:1 Image Format * Image Area 1.92 x 1.92 mm * Split-frame Transfer Operation * 24 mm Square Pixels * Symmetrical Anti-static Gate Protection * Four High Performance Very Low Noise Output Amplifiers
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CCD47-10
Abstract: Scientific Imaging Technologies
Contextual Info: CCD47-10 AIMO Back Illuminated Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal 1056 by 1027 Usable Pixels * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection
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CCD42-10
Abstract: tdi ccd E2V CCD42 7133A tdi ccd Scientific Imaging Technologies
Contextual Info: CCD42-10 Back Illuminated High Performance AIMO CCD Sensor FEATURES * 2048 by 512 Pixel Format * 13.5 mm Square Pixels * Image Area 27.6 x 6.9 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Back Illuminated Format for Enhanced Quantum Efficiency
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ccd42-10ccd42tdi ccd e2v7133a+2tdi ccdscientific imaging technologies
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ccd47-10
Abstract: Scientific Imaging Technologies
Contextual Info: CCD47-10 AIMO Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Image Format * Image Area 13.3 x 13.3 mm * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register
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CCD39-02
Contextual Info: CCD39-02 Back Illuminated High Performance CCD Sensor FEATURES * 80 by 80 1:1 Image Format * Image Area 1.92 x 1.92 mm * Frame Transfer Operation * 24 mm Square Pixels * Symmetrical Anti-static Gate Protection * High Performance Very Low Noise Output Amplifiers
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e2v ccd
Abstract: CCD47-20 CCD4720
Contextual Info: CCD47–20 Back Illuminated High Performance AIMO Back Illuminated CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection
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e2v ccd
Abstract: CCD47-20 7133A 8C740 CCD4720 scientific imaging technologies A1A-CCD47-20 ccd sensor back illuminated CCD-Sensor for e2v CCD47
Contextual Info: CCD47-20 High Performance CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register
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ccd47-20sp243e2v ccd7133a+78c740ccd4720scientific imaging technologiesa1a-ccd47-20ccd sensor back illuminatedccd-sensor for e2vccd47
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CCD4720
Abstract: CCD47-20
Contextual Info: CCD47-20 AIMO High Performance CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register
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CCD42-40
Abstract: e2v ccd42-40 e2v ccd Scientific Imaging Technologies ccd sensor back illuminated
Contextual Info: CCD42-40 Ceramic AIMO Back Illuminated Compact Package High Performance CCD Sensor FEATURES * 2048 by 2048 pixel format * 13.5 mm square pixels * Image area 27.6 x 27.6 mm * Back Illuminated format for high quantum efficiency * Full-frame operation * Symmetrical anti-static gate protection
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ccd42-40ccd42ful53e2v ccd42-40+3e2v ccdscientific imaging technologiesccd sensor back illuminated
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CCD47-10
Abstract: e2v CCD57-10
Contextual Info: CCD47-10 NIMO Back Illuminated Compact Pack High Performance CCD Sensor FEATURES * 1024 by 1024 Nominal 1056 by 1027 Usable Pixels * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Full-Frame Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection
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DIODE B12
Abstract: B12 diode CCD77-00 DIODE B12 45 21-B12 Scientific Imaging Technologies essex 8027 e2v ccd ccd 512 x 512
Contextual Info: CCD77-00 Front Illuminated High Performance IMO Device FEATURES * 512 by 512 Image Format * Image Area 12.3 x 12.3 mm * Full-Frame Operation * 24 mm Square Pixels * Low Noise Output Amplifiers * 100% Active Area * Inverted Mode Operation APPLICATIONS * Spectroscopy
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ccd77-00ccd77diode b12b12 diode+6diode b12 4521-b12scientific imaging technologiesessex 8027e2v ccdccd 512 x 512
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e2v ccd42-40
Abstract: e2v CCD sensor
Contextual Info: CCD42-40 NIMO Back Illuminated High Performance CCD Sensor FEATURES * 2048 by 2048 pixel format * 13.5 mm square pixels * Image area 27.6 x 27.6 mm * Back Illuminated format for high quantum efficiency * Full-frame operation * Symmetrical anti-static gate protection
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ccd42-4015-bite2v ccd42-40e2v ccd sensor |
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CCD47-20
Abstract: CCD4720 S11071 ccd sensor back illuminated
Contextual Info: CCD47-20 Back Illuminated NIMO High Performance NIMO Back Illuminated CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Back Illuminated Format * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection
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CCD4720
Abstract: CCD47-20
Contextual Info: CCD47-20 High Performance CCD Sensor FEATURES * 1024 by 1024 1:1 Image Format * Image Area 13.3 x 13.3 mm * Frame Transfer Operation * 13 mm Square Pixels * Symmetrical Anti-static Gate Protection * Very Low Noise Output Amplifiers * Gated Dump Drain on Output Register
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