TDM4953 Search Results
TDM4953 Datasheets Context Search
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Contextual Info: Datasheet P-Channel Enhancement Mode Power MOSFET TDM4953 DESCRIPTION D1 D2 The TDM4953 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate G2 G1 voltages as low as 4.5V. This device is suitable for use as a |
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TDM4953 TDM4953 |