TDK X 0812 Search Results
TDK X 0812 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MC28F008-12/R |
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28F008 - 8-MBit (1k x 8) NOR Flash Memory |
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10131319-0812100LF |
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Minitek® Pwr 4.2 HCC, Dual Row, Vertical Through Hole Header, Gold Flash plating, Black Color, 8 Positions, Non GW Compatible Nylon66, Tray Packing. | |||
54242-808081200LF |
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BergStik®, Board to Board connector, 2.54mm (0.100in), Unshrouded vertical stacking Header, Surface Mount, Double Row, 8 Positions | |||
55508-122LF |
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Minitek® 2.00mm, Board to Board Connector, Low Profile, PCB Mounted Receptacle , Vertical , Surface Mount, Top Entry, Double row, 22 Positions, 2.00mm (0.079in) Pitch. | |||
57102-G08-12ULF |
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Minitek®, Board/Wire to Board Connectors, Unshrouded Headers - Through Hole - Double row - 24 Positions - 2mm (0.079inch) - Vertical |
TDK X 0812 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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abzd
Abstract: "BJT Transistors" IRFZ44NPBF BT3904 C1608X7R1E105M BJT Transistors max1386 0X0066 2N3904 j19 C1608X7R1C104M
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MAX1385 2000/XP-compatible MAX1385. 68HC16 68HC16MODULE-DIP) MAX1385 abzd "BJT Transistors" IRFZ44NPBF BT3904 C1608X7R1E105M BJT Transistors max1386 0X0066 2N3904 j19 C1608X7R1C104M | |
LT 8224
Abstract: lt 8239 IC AN 8224 8239 sfu 455b MB204 HD6437034R
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HD6437034R FCR20 H0483 H0203 H0204 W0204 LT 8224 lt 8239 IC AN 8224 8239 sfu 455b MB204 | |
Contextual Info: BH9510 - 1 FCR4.0MC5 Ta* 20 Cdeg] a. V1H/V1L 0- 0 Typical if «x Worst CV3 3 - 1 -, uni V2L m *.-, r - * — . •— c. Fosc l 9 . D - ML t%l ; . _i_ - .3 .1 - -.1 - -.3 -.5 m _ 1_ _ 1_ _ 1_ _ 1_ _ 1_ _ 1_ _ 1_ |
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BH9510 | |
F1F16
Abstract: dual poe pse injector tvs 5000w ltc4266 application tvs diode 5000W DIODE F16 panasonic msd versatile power supply DC1815A-2 TDK transformer ST
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DC1815A LTC4266A LTC4266. dc1815afb F1F16 dual poe pse injector tvs 5000w ltc4266 application tvs diode 5000W DIODE F16 panasonic msd versatile power supply DC1815A-2 TDK transformer ST | |
Contextual Info: DEMO MANUAL DC1939A LTM8052A 36V, 5A, 2-Quadrant CVCC Step-Down µModule Regulator DESCRIPTION Demonstration circuit 1939 is a 36V, 5A, 2-quadrant CVCC step-down Module regulator featuring the LTM®8052A. The demo circuit is designed for a 2.5V output from an |
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DC1939A LTM8052A LTM8052A dc1939af | |
Contextual Info: DEMO MANUAL DC1843A DC1842A and DC1680A LTC4290B/LTC4271 8-Port PSE with Digital Isolation DESCRIPTION Demonstration kit DC1843A is an 8-port Type 2 power sourcing equipment PSE composed of a DC1842A daughter card and DC1680A motherboard. The kit is used |
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DC1843A DC1842A DC1680A LTC4290B/LTC4271 DC1843A DC1842A DC1680A LTC4290B LTC4271 DC590 | |
uf16
Abstract: LT3595
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LT3518 100mV TSSOP16E QFN10, 3518fe uf16 LT3595 | |
BSC123NO8NS3-G
Abstract: CREE XM-L driver BSC059N04 Cree XM-L power supply driver led 60w schematic BSC123NO8NS3 LT3791-1 SI2306 60w led driver BSC123NO8
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LT3761 60VIN QFN-32 QFN-16 TSSOP-16E TSSOP-38E LT3478/LT3478-1 LT3791/LT3791-1 BSC123NO8NS3-G CREE XM-L driver BSC059N04 Cree XM-L power supply driver led 60w schematic BSC123NO8NS3 LT3791-1 SI2306 60w led driver BSC123NO8 | |
IC 4614
Abstract: 4614 fet LTM4614V C3216X7SOJ226M pin diagram for IC 4614 LT 4614 ltm 4614 LTM4614 10CE100FH dual fet 4614
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LTM4614 4614fb IC 4614 4614 fet LTM4614V C3216X7SOJ226M pin diagram for IC 4614 LT 4614 ltm 4614 10CE100FH dual fet 4614 | |
Contextual Info: BLF881; BLF881S UHF power LDMOS transistor Rev. 01 — 10 December 2009 Preliminary data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent |
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BLF881; BLF881S BLF881 BLF881S | |
BLF871
Abstract: 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871
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BLF871; BLF871S BLF871 BLF871S 900 mhz av transmitter DVB-T transistor amplifier OFDM transmitter UHF rogers 5880 UHF/UHF/blf871 | |
Contextual Info: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The |
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BLF871; BLF871S BLF871 BLF871S | |
blf881Contextual Info: BLF881; BLF881S UHF power LDMOS transistor Rev. 02 — 10 February 2010 Product data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent |
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BLF881; BLF881S BLF881 BLF881S | |
Contextual Info: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The |
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BLF871; BLF871S BLF871 BLF871S | |
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Contextual Info: BLF881; BLF881S UHF power LDMOS transistor Rev. 3 — 7 December 2010 Product data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent |
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BLF881; BLF881S BLF881 | |
panasonic inverter dv 707 manual
Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
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Contextual Info: TGF3015-SM 10W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features |
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TGF3015-SM TGF3015-SM | |
ltbjb
Abstract: lbhw LTC3026 transistor bd 202 msop8 epad
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LTC3026 100mV 10-Lead 10-Lead 290mV O-220, 300mV OT-223, 035mV ltbjb lbhw transistor bd 202 msop8 epad | |
toshiba NAND TC5832Contextual Info: TOSHIBA TC5832FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC5832FT device is a single 5.0-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks. |
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TC5832FT TC5832FT 528-byte, 528-byte toshiba NAND TC5832 | |
transistor A16A
Abstract: eeprom toshiba L 510 ICC08 TC5832DC TC58V32DC DN511 toshiba NAND ID code
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TC5832DC TC5832DC 528-byte, 528-byte FDC-22 transistor A16A eeprom toshiba L 510 ICC08 TC58V32DC DN511 toshiba NAND ID code | |
Contextual Info: LTC3606B 800mA Synchronous Step-Down DC/DC with Average Input Current Limit DESCRIPTION FEATURES n n n n n n n n n n n n n n Programmable Average Input Current Limit: ±5% Accuracy Step-Down Output: Up to 96% Efficiency Low Noise Pulse-Skipping Operation at Light Loads |
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LTC3606B 800mA 3606B TSSOP-16E, DFN-16 | |
lt3990
Abstract: LT3990IMSE LT3990HMSE-5PBF LT3990-5 marking lfwj K/BD-374
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LT3990/LT3990-3 3/LT3990-5 350mA 12VIN 200kHz 16-Pin DFN-10, MSOPE-10 lt3990 LT3990IMSE LT3990HMSE-5PBF LT3990-5 marking lfwj K/BD-374 | |
LTC6945
Abstract: LTC2270 D2141-5 LTC5584 D11052
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LTC2270 16-Bit, 20Msps 16-bit 44LSBRMS. wiV/600mW, 530MHz, 31dBm 80dBm, LTC6945 D2141-5 LTC5584 D11052 | |
LTM4628Y
Abstract: LTM4628IV LTM4628V LTM4628 CAPACITOR TANTALUM 4.7UF 35V 400KHZ LTM4628EV-PBF LTM4628EY LTM4628EV#PBF LTM4628EV DIODE ZENER B10
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LTM4628 24VIN, LTM4619 LTM4615 LTM4616 LTM4614 LTM4627 26VIN, 4628fc LTM4628Y LTM4628IV LTM4628V CAPACITOR TANTALUM 4.7UF 35V 400KHZ LTM4628EV-PBF LTM4628EY LTM4628EV#PBF LTM4628EV DIODE ZENER B10 |