TD 42 F Search Results

TDS-08B

Abstract: 820G
Contextual Info: TD S 08A Dimensions 196 * h □ — ? / B R 5| Stroke and Pull Force Characteristics Power and Pull Force Characteristics m m ujm 3.4w Standard Coil Specifications Cont. rating 3.4W tSÎa Q «;Ä(mA) Pull force Œ(V) Voilage Resistance Current 10.6 42 169

CJ370

Abstract: m27500-22te2t14 trompeter TAI-165 m27500-22te
Contextual Info: RED INDICATES ORIGINAL DATA O M T A lte IN THIS PROPRIETARY TD TROMPETER B-ECT P f lC S INC. MO SHALL MIT BE M g i n m . COPIB) OR USED REV r DASH ND -7 -B -9 -10 -11 -12 -13 -13A -14 —23 -24 -24A -25 -25A -26 -27 -29 -30 -32 -33 -42 «43 -45 -46 -47 -49

thyristor tt 45 f 1100

Contextual Info: Fast thyristor modules Type V drm EUPEC I trm sm Itsm ^ E / i 2d t Itavm ^ c V TO » • 34Ü35T7 QOGOllb & ?& ■ i*t (d i/d t)cr (d v /d t)cr Rthjc DIN IEC 747-6 180'-el sin. v /n s K/W K/W °C "^thCK V rrm V A 10 ms, 10 ms, fvj max '» Jn a x 180 °el

Contextual Info: , Fast thyristor modules Type V drm blE T> m 34032^7 DDD1337 ESI « U P E C EUPEC It r m s m It s m V TO / i 2d t (di/dt)cr Tt (dv/dt)cr tq R th J O R th C K tvj max Outline V rrm V d sm = V drm V r sm = VRRM + 100 V A V 10 ms, 10 ms, 180 °el t,¡ = tvj

Pulse H1138

Abstract: pulse h1012 H1138 LXT972 H1012 H1019 H1042 H1086 H1089 H1117
Contextual Info: 10/100 BASE-T SINGLE PORT TRANSFORMER MODULES With 1:1 Transmit Turns Ratios For RoHS part add suffix NL3 Peak solder temperature rating per Table 5-2 in IPC/JEDEC J-STD-020C Compatible with Broadcom, Intel, Micrel, National Semiconductor, ICS, and TDK Transceivers

H1012

Abstract: HX1148 H1338 H1019 H1042 H1086 H1089 H1117 H1138 HX1178
Contextual Info: 10/100 BASE-T SINGLE PORT TRANSFORMER MODULES With 1:1 Transmit Turns Ratios For RoHS part add suffix NL7 RoHS “NL” peak solder rating 260°C, non-RoHS peak solder rating 235°C°° Compatible with Broadcom, Intel, Micrel, National Semiconductor, ICS, and TDK Transceivers

Contextual Info: 10/100 Base-TX ISOLATION TRANSFORMERS WITH FILTERS * * * * * Designed for 10/100MB/s Transmission Over UTP-5 Cable, IEEE 802.3 100BASE-TX. Designed for 350uHY Primary OCL with an 8mA bias. Designed to Support all leading Fast Ethernet Chip Sets. Provides the Cable Interface, Isolation & Common Mode Filtering required by the PMD Sublayer.

Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a

74CBT3125

Abstract: NL05 SOLC-115-02-S-Q-P 20 pin header connector SPRU655A EMU10 header pin dimensions XDS510 XDS560 mil954
Contextual Info: 60-Pin Emulation Header Technical Reference Literature Number: SPRU655A February 2003 Revised June 2004 Printed on Recycled Paper -1 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any

PE-68508

Abstract: PE 68508 PE68515 pe-68510 pe68508 pulse pe-68517 PE-68517 TRANSFORMER CT 350 mA RJ45 SMT magnetics 1000 H1012
Contextual Info: HIGH SPEED LAN MAGNETICS MODULES Designed for 10/100Base-TX Meets all IEEE 802.3 and ANSI X3.236 standards including 350 µH OCL with 8 mA bias applied from 0°C to 70°C Compatible with AMD, Davicom, ICS, Level One, National, and TDK transceivers IC grade transfer molded package

VG 96929

Abstract: IC IGBT fast irf transistor IRF 250 IRG4BC30FD-S 6000UF ir igbt IRg4bc30
Contextual Info: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

MTP50N06VL

Abstract: mtp5 AN569
Contextual Info: MTP50N06VL Preferred Device Power MOSFET 42 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

nh TRANSISTOR

Contextual Info: MTP50N06VL Preferred Device Power MOSFET 42 Amps, 60 Volts, Logic Level N−Channel TO−220 http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: MTP50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

2SK3899

Abstract: 2SK3899-ZK 2SK38 D1717
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3899 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3899-ZK TO-263 MP-25ZK

2SK3432

Abstract: 2SK3432-S 2SK3432-Z 2SK3432-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3432 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance:

2SK3355

Abstract: 2SK3355-S 2SK3355-Z 2SK3355-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3355 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3355 TO-220AB 2SK3355-S TO-262 2SK3355-ZJ TO-263 2SK3355-Z TO-220SMDNote

M2SJ607

Abstract: 2SJ607 2SJ607 DATASHEET 2SJ607-S 2SJ607-Z 2SJ607-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ607 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SJ607 TO-220AB FEATURES

Contextual Info: RUIDUIT Tool Chart for Copper LCA, LCAN, LCD Lugs and SCS Splices Tool Chart for Compression-Type Copper Lugs and Splices For Installation on Copper Cables Using RlNDUIT® Tools Tool Chart for Compression Connectors Types LCA, LCAN, LCD and SCS with Copper Cable

Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP50N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM

D14-131

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ ORDERING INFORMATION DESCRIPTION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3354 TO-220AB 2SK3354-S TO-262 2SK3354-ZJ TO-263

MP-25

Abstract: MP-25Z 2SK3431 2SK3431-S 2SK3431-Z 2SK3431-ZJ
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3431 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3431 TO-220AB 2SK3431-S

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N055CLE, NP84N055DLE, NP84N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ606 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications. ★ PART NUMBER PACKAGE 2SJ606