TD 42 F Search Results

EUPEC TT 56 n 12

Abstract: EUPEC TT 56 n 16 TD 42 F eupec TD 42 F 10 td-42 f 04 EUPEC TD 42 EUPEC DD 53 s 1200 k TSM 123 EUPEC TD 56 N 08 EUPEC tt 25 N 12
Contextual Info: blE T> EUPEC m 34032^7 000115b 341 « U P E C TT 42 F, TD 42 F, DT 42 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

TDS-08B

Abstract: 820G
Contextual Info: TD S 08A Dimensions 196 * h □ — ? / B R 5| Stroke and Pull Force Characteristics Power and Pull Force Characteristics m m ujm 3.4w Standard Coil Specifications Cont. rating 3.4W tSÎa Q «;Ä(mA) Pull force Œ(V) Voilage Resistance Current 10.6 42 169

ATQ Fuses

Abstract: ATQ Fuses 5 atq20 ATQ8 ATQ15 ATQ1 R213708 ATQ2 E215238 B211141
Contextual Info: General Purpose US US Fuses General Purpose Fuses Midget Fuses 10x38 US Time Delay ATQ 500VAC (TD) Amp-trap ATQ midget time-delay fuses are rated a full 500 volts AC with 42 ampere ratings from 1/10 to 30A. They are an excellent choice for supplemental

r0113

Abstract: ATEX PTB 00ATEX3121X trumpet R0112
Contextual Info: 80-81.qxp 8/11/2010 4F 10:42 AM Page 80 ATEX Trumpet IP66 4F International Standards Flameproof and Increased Safety Gland Type: Non-armoured Cable Type: Non-armoured Certifications and Compliances: • ATEX PTB 00ATEX3121X Ex II 2 G Ex e II/Ex II 2 D Ex tD A21

Contextual Info: H M -656 42/8 83 {£ HARRIS 8K x 8 Asynchronous CMOS Static RAM June 1989 Description Features • This Circuit Is Processed in Accordance to M il-S td 88 3 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell

A B N Incremental Encoder

Contextual Info: Incremental Shaft Encoders Type RI 76 TD with Hollow Shaft n n n n n NUMBER OF PULSES TECHNICAL DATA mechanical Through shaft with up to diameter 42 mm Short overall length with an outside diameter of only 76 mm Easy installation by means of clamping ring

TLO 61

Contextual Info: REVISION AND CHANGE EFFECTM1Y DATE LTR. DCO DESCRIPTION DATE Is su e d To E ngineering A APP’D. 17/05/01 TA 43.2 d£ - 61,4 [ 2 ,42 * Notes: 1. ASSEMBLY TD BE LABELLED AS FDLLDWS BDTH ENDS* “Part Number" REV.’levef 'YrWk* Methode MADE IN XXXXXX A dd itio n al In fo rn o 'tlo n

CJ370

Abstract: m27500-22te2t14 trompeter TAI-165 m27500-22te
Contextual Info: RED INDICATES ORIGINAL DATA O M T A lte IN THIS PROPRIETARY TD TROMPETER B-ECT P f lC S INC. MO SHALL MIT BE M g i n m . COPIB) OR USED REV r DASH ND -7 -B -9 -10 -11 -12 -13 -13A -14 —23 -24 -24A -25 -25A -26 -27 -29 -30 -32 -33 -42 «43 -45 -46 -47 -49

TRF372017

Contextual Info: TRF372017 www.ti.com SLWS224 – MAY 2010 GND VCC_PLL CP_OUT GND VTUNE GND 41 40 39 38 37 43 42 GND REFIN 44 DATA LE 45 CLK VCC_VCO1 VCC_DIG 3 34 LO_OUT_P GND_DIG 4 33 LO_OUT_N 12 25 GND Wireless Infrastructure – CDMA: IS95, UMTS, CDMA2000, TD-SCDMA – TDMA: GSM, IS-136, EDGE/UWC-136

thyristor tt 45 f 1100

Contextual Info: Fast thyristor modules Type V drm EUPEC I trm sm Itsm ^ E / i 2d t Itavm ^ c V TO » • 34Ü35T7 QOGOllb & ?& ■ i*t (d i/d t)cr (d v /d t)cr Rthjc DIN IEC 747-6 180'-el sin. v /n s K/W K/W °C "^thCK V rrm V A 10 ms, 10 ms, fvj max '» Jn a x 180 °el

thyristor tt 18 N 1100

Abstract: thyristor tt 18 f 1000 EUPEC tt 93 n EUPEC tt 93 n 14 thyristor tt 45 f 1100 thyristor tt 18 n 800 TD 42 F thyristor TD 42 F EUPEC TD 25 eupec tt 92 n 12
Contextual Info: Fast thyristor modules Type V drm iH E EUPEC It r m s m I tsm /¡2dt I tavm ^ c V TO> •t '»,= tvj max tv, = 34D35T7 DOGOllt. Ö7fl D (di/dt cr (dv/dt)cr R,hjc DIN IEC 747-6 DIN IEC 747-6 sin. V rrm 10 ms, 180 °el tvj max sin. A A V 10 ms, tvj max A/°C

thyristor TD 42

Abstract: TT42F tt200f
Contextual Info: Fast thyristor modules Type Itrmsm Itsm Vdrm Vrrm Vdsm Vrsm = = Vdrm Vrrm + 100 V V A / i 2dt Itavm^ c V TO rT (di/dt)cr (dv/dt)cr RthJC DIN IEC 747-6 180 °el sin. 10 ms, 10 ms, tv, max tvj max 180 el sin. ’»)= t„max tv| = Ivj max DIN IEC 747-6 A A2s

Contextual Info: , Fast thyristor modules Type V drm blE T> m 34032^7 DDD1337 ESI « U P E C EUPEC It r m s m It s m V TO / i 2d t (di/dt)cr Tt (dv/dt)cr tq R th J O R th C K tvj max Outline V rrm V d sm = V drm V r sm = VRRM + 100 V A V 10 ms, 10 ms, 180 °el t,¡ = tvj

thyristor tt 45 f 1100

Abstract: EUPEC Thyristor tt 71 EUPEC TT 42F TD 42 F thyristor TD 42 TT 42F f 42 thyristor TD 42 F thyristor tt 18 f 1000 TT 6-A
Contextual Info: Type V drm blE EUPEC Fast thyristor modules Itr m sm Itsm / i 2d t V T0 Tt BMOBST? □□□1337 ESI T> (di/dt)cr (dv/dt)cr RthJC R th C K tv j m ax IUPEC Outline V rrm V dsm = vDRM 10 ms, 10 ms, D IN D IN VRRM + 100 V tvj max tv j max 180 ”el sin. t, j

Pulse H1138

Abstract: pulse h1012 H1138 LXT972 H1012 H1019 H1042 H1086 H1089 H1117
Contextual Info: 10/100 BASE-T SINGLE PORT TRANSFORMER MODULES With 1:1 Transmit Turns Ratios For RoHS part add suffix NL3 Peak solder temperature rating per Table 5-2 in IPC/JEDEC J-STD-020C Compatible with Broadcom, Intel, Micrel, National Semiconductor, ICS, and TDK Transceivers

H1012

Abstract: HX1148 H1338 H1019 H1042 H1086 H1089 H1117 H1138 HX1178
Contextual Info: 10/100 BASE-T SINGLE PORT TRANSFORMER MODULES With 1:1 Transmit Turns Ratios For RoHS part add suffix NL7 RoHS “NL” peak solder rating 260°C, non-RoHS peak solder rating 235°C°° Compatible with Broadcom, Intel, Micrel, National Semiconductor, ICS, and TDK Transceivers

Contextual Info: 10/100 Base-TX ISOLATION TRANSFORMERS WITH FILTERS * * * * * Designed for 10/100MB/s Transmission Over UTP-5 Cable, IEEE 802.3 100BASE-TX. Designed for 350uHY Primary OCL with an 8mA bias. Designed to Support all leading Fast Ethernet Chip Sets. Provides the Cable Interface, Isolation & Common Mode Filtering required by the PMD Sublayer.

center tap transformer 18 0 18

Abstract: pulse h1012 centre tapped Transformer center tap transformer H1138 transformer turn ratio 15 5 pin pulse transformer transformer winding datasheet transformer centre tap TDK Pulse Transformers
Contextual Info: 10/100 BASE-T SINGLE PORT TRANSFORMER MODULES With 1:1 Transmit Turns Ratios For RoHS part add suffix NL7 RoHS “NL” peak solder rating 260°C, non-RoHS peak solder rating 235°C°° Compatible with Broadcom, Intel, Micrel, National Semiconductor, ICS, and TDK Transceivers

Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a

H5020

Abstract: h50x H5012 H5014 MX321
Contextual Info: 1000BASE-T DUAL PORT MAGNETIC MODULES Designed to Support 1:1 Turns Ratio Transceivers Designed for Ethernet 100/1000Base-T full duplex applications Supports 4 pairs of category 5 UTP cable Cable interface for isolation and low common mode emissions Compliant with IEEE 802.3ab standard

MCT8

Contextual Info: 1000BASE-T DUAL PORT MAGNETIC MODULES Designed to Support 1:1 Turns Ratio Transceivers Designed for Gigabit Ethernet 10/100/1000BASE-T full duplex applications Supports 4 pairs of category 5 UTP cable Cable interface for isolation and low common mode emissions

H5020

Abstract: h50x H5012 H5014
Contextual Info: 1000BASE-T DUAL PORT MAGNETIC MODULES Designed to Support 1:1 Turns Ratio Transceivers Designed for Ethernet 100/1000Base-T full duplex applications Supports 4 pairs of category 5 UTP cable Cable interface for isolation and low common mode emissions Compliant with IEEE 802.3ab standard

din 6900

Abstract: TT 46 N 12 TT60N TT 93 N 08 DIN 46 244 TT105N AD116s TT95N din 46247 4.8 DIN 46247
Contextual Info: Outlines 6,3 * 0 8 I ,7 1 4=*„ -0 i i_ l i/ i 2 case C: 0 = M6, case U: 0 = 1/4” case B -►I2- 4 case C: 0 = M8, case U: 0 = 1 /4 - 2 8 U N F - 2 A case B case E v00' - * 1 I-1 J— ‘ J L 3,5x 2 - s 38 * 2 3 —— 1=3 'A Outlines ‘

74CBT3125

Abstract: NL05 SOLC-115-02-S-Q-P 20 pin header connector SPRU655A EMU10 header pin dimensions XDS510 XDS560 mil954
Contextual Info: 60-Pin Emulation Header Technical Reference Literature Number: SPRU655A February 2003 Revised June 2004 Printed on Recycled Paper -1 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any