TD 42 F Search Results

EUPEC TT 56 n 12

Abstract: EUPEC TT 56 n 16 TD 42 F eupec TD 42 F 10 td-42 f 04 EUPEC TD 42 EUPEC DD 53 s 1200 k TSM 123 EUPEC TD 56 N 08 EUPEC tt 25 N 12
Contextual Info: blE T> EUPEC m 34032^7 000115b 341 « U P E C TT 42 F, TD 42 F, DT 42 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

TDS-08B

Abstract: 820G
Contextual Info: TD S 08A Dimensions 196 * h □ — ? / B R 5| Stroke and Pull Force Characteristics Power and Pull Force Characteristics m m ujm 3.4w Standard Coil Specifications Cont. rating 3.4W tSÎa Q «;Ä(mA) Pull force Œ(V) Voilage Resistance Current 10.6 42 169

r0113

Abstract: ATEX PTB 00ATEX3121X trumpet R0112
Contextual Info: 80-81.qxp 8/11/2010 4F 10:42 AM Page 80 ATEX Trumpet IP66 4F International Standards Flameproof and Increased Safety Gland Type: Non-armoured Cable Type: Non-armoured Certifications and Compliances: • ATEX PTB 00ATEX3121X Ex II 2 G Ex e II/Ex II 2 D Ex tD A21

Contextual Info: H M -656 42/8 83 {£ HARRIS 8K x 8 Asynchronous CMOS Static RAM June 1989 Description Features • This Circuit Is Processed in Accordance to M il-S td 88 3 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell

TLO 61

Contextual Info: REVISION AND CHANGE EFFECTM1Y DATE LTR. DCO DESCRIPTION DATE Is su e d To E ngineering A APP’D. 17/05/01 TA 43.2 d£ - 61,4 [ 2 ,42 * Notes: 1. ASSEMBLY TD BE LABELLED AS FDLLDWS BDTH ENDS* “Part Number" REV.’levef 'YrWk* Methode MADE IN XXXXXX A dd itio n al In fo rn o 'tlo n

CJ370

Abstract: m27500-22te2t14 trompeter TAI-165 m27500-22te
Contextual Info: RED INDICATES ORIGINAL DATA O M T A lte IN THIS PROPRIETARY TD TROMPETER B-ECT P f lC S INC. MO SHALL MIT BE M g i n m . COPIB) OR USED REV r DASH ND -7 -B -9 -10 -11 -12 -13 -13A -14 —23 -24 -24A -25 -25A -26 -27 -29 -30 -32 -33 -42 «43 -45 -46 -47 -49

TRF372017

Contextual Info: TRF372017 www.ti.com SLWS224 – MAY 2010 GND VCC_PLL CP_OUT GND VTUNE GND 41 40 39 38 37 43 42 GND REFIN 44 DATA LE 45 CLK VCC_VCO1 VCC_DIG 3 34 LO_OUT_P GND_DIG 4 33 LO_OUT_N 12 25 GND Wireless Infrastructure – CDMA: IS95, UMTS, CDMA2000, TD-SCDMA – TDMA: GSM, IS-136, EDGE/UWC-136

thyristor tt 45 f 1100

Contextual Info: Fast thyristor modules Type V drm EUPEC I trm sm Itsm ^ E / i 2d t Itavm ^ c V TO » • 34Ü35T7 QOGOllb & ?& ■ i*t (d i/d t)cr (d v /d t)cr Rthjc DIN IEC 747-6 180'-el sin. v /n s K/W K/W °C "^thCK V rrm V A 10 ms, 10 ms, fvj max '» Jn a x 180 °el

thyristor tt 18 N 1100

Abstract: thyristor tt 18 f 1000 EUPEC tt 93 n EUPEC tt 93 n 14 thyristor tt 45 f 1100 thyristor tt 18 n 800 TD 42 F thyristor TD 42 F EUPEC TD 25 eupec tt 92 n 12
Contextual Info: Fast thyristor modules Type V drm iH E EUPEC It r m s m I tsm /¡2dt I tavm ^ c V TO> •t '»,= tvj max tv, = 34D35T7 DOGOllt. Ö7fl D (di/dt cr (dv/dt)cr R,hjc DIN IEC 747-6 DIN IEC 747-6 sin. V rrm 10 ms, 180 °el tvj max sin. A A V 10 ms, tvj max A/°C

thyristor TD 42

Abstract: TT42F tt200f
Contextual Info: Fast thyristor modules Type Itrmsm Itsm Vdrm Vrrm Vdsm Vrsm = = Vdrm Vrrm + 100 V V A / i 2dt Itavm^ c V TO rT (di/dt)cr (dv/dt)cr RthJC DIN IEC 747-6 180 °el sin. 10 ms, 10 ms, tv, max tvj max 180 el sin. ’»)= t„max tv| = Ivj max DIN IEC 747-6 A A2s

Contextual Info: , Fast thyristor modules Type V drm blE T> m 34032^7 DDD1337 ESI « U P E C EUPEC It r m s m It s m V TO / i 2d t (di/dt)cr Tt (dv/dt)cr tq R th J O R th C K tvj max Outline V rrm V d sm = V drm V r sm = VRRM + 100 V A V 10 ms, 10 ms, 180 °el t,¡ = tvj

thyristor tt 45 f 1100

Abstract: EUPEC Thyristor tt 71 EUPEC TT 42F TD 42 F thyristor TD 42 TT 42F f 42 thyristor TD 42 F thyristor tt 18 f 1000 TT 6-A
Contextual Info: Type V drm blE EUPEC Fast thyristor modules Itr m sm Itsm / i 2d t V T0 Tt BMOBST? □□□1337 ESI T> (di/dt)cr (dv/dt)cr RthJC R th C K tv j m ax IUPEC Outline V rrm V dsm = vDRM 10 ms, 10 ms, D IN D IN VRRM + 100 V tvj max tv j max 180 ”el sin. t, j

Pulse H1138

Abstract: pulse h1012 H1138 LXT972 H1012 H1019 H1042 H1086 H1089 H1117
Contextual Info: 10/100 BASE-T SINGLE PORT TRANSFORMER MODULES With 1:1 Transmit Turns Ratios For RoHS part add suffix NL3 Peak solder temperature rating per Table 5-2 in IPC/JEDEC J-STD-020C Compatible with Broadcom, Intel, Micrel, National Semiconductor, ICS, and TDK Transceivers

H1012

Abstract: HX1148 H1338 H1019 H1042 H1086 H1089 H1117 H1138 HX1178
Contextual Info: 10/100 BASE-T SINGLE PORT TRANSFORMER MODULES With 1:1 Transmit Turns Ratios For RoHS part add suffix NL7 RoHS “NL” peak solder rating 260°C, non-RoHS peak solder rating 235°C°° Compatible with Broadcom, Intel, Micrel, National Semiconductor, ICS, and TDK Transceivers

Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a

H5020

Abstract: h50x H5012 H5014 MX321
Contextual Info: 1000BASE-T DUAL PORT MAGNETIC MODULES Designed to Support 1:1 Turns Ratio Transceivers Designed for Ethernet 100/1000Base-T full duplex applications Supports 4 pairs of category 5 UTP cable Cable interface for isolation and low common mode emissions Compliant with IEEE 802.3ab standard

MCT8

Contextual Info: 1000BASE-T DUAL PORT MAGNETIC MODULES Designed to Support 1:1 Turns Ratio Transceivers Designed for Gigabit Ethernet 10/100/1000BASE-T full duplex applications Supports 4 pairs of category 5 UTP cable Cable interface for isolation and low common mode emissions

H5020

Abstract: h50x H5012 H5014
Contextual Info: 1000BASE-T DUAL PORT MAGNETIC MODULES Designed to Support 1:1 Turns Ratio Transceivers Designed for Ethernet 100/1000Base-T full duplex applications Supports 4 pairs of category 5 UTP cable Cable interface for isolation and low common mode emissions Compliant with IEEE 802.3ab standard

din 6900

Abstract: TT 46 N 12 TT60N TT 93 N 08 DIN 46 244 TT105N AD116s TT95N din 46247 4.8 DIN 46247
Contextual Info: Outlines 6,3 * 0 8 I ,7 1 4=*„ -0 i i_ l i/ i 2 case C: 0 = M6, case U: 0 = 1/4” case B -►I2- 4 case C: 0 = M8, case U: 0 = 1 /4 - 2 8 U N F - 2 A case B case E v00' - * 1 I-1 J— ‘ J L 3,5x 2 - s 38 * 2 3 —— 1=3 'A Outlines ‘

74CBT3125

Abstract: NL05 SOLC-115-02-S-Q-P 20 pin header connector SPRU655A EMU10 header pin dimensions XDS510 XDS560 mil954
Contextual Info: 60-Pin Emulation Header Technical Reference Literature Number: SPRU655A February 2003 Revised June 2004 Printed on Recycled Paper -1 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any

Contextual Info: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRF530S

Contextual Info: PD - 95970 IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: SARRTY ORGANIZATIONS RELIABILITY SFEEIFIEATIONS THIS HILTER HAS BEEN FDRMADDY ROCDONIZGD, OGRTIOIGD DR AODRDVGD BY THE LISTED AGGNGY THEREFORE, ALL TEST/REQUIREMENTS SPECIFIED IN THE LATEST REVISION DO THE FOLLOWING AGONCY STANDARDS HAVE BEEN MET STDRAOO TOMOORATORG: -40°C TO +85°0

PE-68508

Abstract: PE 68508 PE68515 pe-68510 pe68508 pulse pe-68517 PE-68517 TRANSFORMER CT 350 mA RJ45 SMT magnetics 1000 H1012
Contextual Info: HIGH SPEED LAN MAGNETICS MODULES Designed for 10/100Base-TX Meets all IEEE 802.3 and ANSI X3.236 standards including 350 µH OCL with 8 mA bias applied from 0°C to 70°C Compatible with AMD, Davicom, ICS, Level One, National, and TDK transceivers IC grade transfer molded package