TD 42 F Search Results

CJ370

Abstract: m27500-22te2t14 trompeter TAI-165 m27500-22te
Contextual Info: RED INDICATES ORIGINAL DATA O M T A lte IN THIS PROPRIETARY TD TROMPETER B-ECT P f lC S INC. MO SHALL MIT BE M g i n m . COPIB) OR USED REV r DASH ND -7 -B -9 -10 -11 -12 -13 -13A -14 —23 -24 -24A -25 -25A -26 -27 -29 -30 -32 -33 -42 «43 -45 -46 -47 -49

Contextual Info: , Fast thyristor modules Type V drm blE T> m 34032^7 DDD1337 ESI « U P E C EUPEC It r m s m It s m V TO / i 2d t (di/dt)cr Tt (dv/dt)cr tq R th J O R th C K tvj max Outline V rrm V d sm = V drm V r sm = VRRM + 100 V A V 10 ms, 10 ms, 180 °el t,¡ = tvj

H1012

Abstract: HX1148 H1338 H1019 H1042 H1086 H1089 H1117 H1138 HX1178
Contextual Info: 10/100 BASE-T SINGLE PORT TRANSFORMER MODULES With 1:1 Transmit Turns Ratios For RoHS part add suffix NL7 RoHS “NL” peak solder rating 260°C, non-RoHS peak solder rating 235°C°° Compatible with Broadcom, Intel, Micrel, National Semiconductor, ICS, and TDK Transceivers

74CBT3125

Abstract: NL05 SOLC-115-02-S-Q-P 20 pin header connector SPRU655A EMU10 header pin dimensions XDS510 XDS560 mil954
Contextual Info: 60-Pin Emulation Header Technical Reference Literature Number: SPRU655A February 2003 Revised June 2004 Printed on Recycled Paper -1 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any

VG 96929

Abstract: IC IGBT fast irf transistor IRF 250 IRG4BC30FD-S 6000UF ir igbt IRg4bc30
Contextual Info: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

MTP50N06VL

Abstract: mtp5 AN569
Contextual Info: MTP50N06VL Preferred Device Power MOSFET 42 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

nh TRANSISTOR

Contextual Info: MTP50N06VL Preferred Device Power MOSFET 42 Amps, 60 Volts, Logic Level N−Channel TO−220 http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: MTP50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

2SK3899

Abstract: 2SK3899-ZK 2SK38 D1717
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3899 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3899-ZK TO-263 MP-25ZK

2SK3432

Abstract: 2SK3432-S 2SK3432-Z 2SK3432-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3432 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance:

2SK3355

Abstract: 2SK3355-S 2SK3355-Z 2SK3355-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3355 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3355 TO-220AB 2SK3355-S TO-262 2SK3355-ZJ TO-263 2SK3355-Z TO-220SMDNote

Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP50N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM

D14-131

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ ORDERING INFORMATION DESCRIPTION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3354 TO-220AB 2SK3354-S TO-262 2SK3354-ZJ TO-263

MP-25

Abstract: MP-25Z 2SK3431 2SK3431-S 2SK3431-Z 2SK3431-ZJ
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3431 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3431 TO-220AB 2SK3431-S

d1507

Abstract: 2SK3479 2SK3479-S 2SK3479-Z 2SK3479-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3479 TO-220AB 2SK3479-S TO-262 2SK3479-ZJ TO-263 2SK3479-Z TO-220SMDNote

2SK3573

Abstract: 2SK3573-S 2SK3573-Z 2SK3573-ZK MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics,

2SK3355

Abstract: 2SK3355-S 2SK3355-Z 2SK3355-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3355 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor ORDERING INFORMATION PART NUMBER PACKAGE 2SK3355 TO-220AB 2SK3355-S TO-262 2SK3355-ZJ TO-263

danbus

Abstract: landis staefa OB 2594 M-5.0 DANFOSS ps 4 b RS485-P 2744429 phoenix RS485B Danfoss application note on RS485 RS-486 suconet
Contextual Info: PSM-ME-RS485/RS485-P Repeater for RS-485 2-wire bus systems 1. Short Description The rail-mountable and compact RS-485 repeater, PSM-ME-RS485/RS485-P, was specially developed for the high demands for use in fieldbus systems. The device is snapped onto standard EN mounting rails in

hipotted

Abstract: rj45 cable rx2 tx2 H1001 PE-69037 RX50 69037 30-RCT
Contextual Info: HIGH SPEED LAN MAGNETICS MODULES Designed for 100 Mbps and 155 Mbps Transmission Over UTP-5 Cable Exceeds IEEE 802.3u and ANSI X3.263 standards 155 ATM, 10/100Base-TX and TP-FDDI applications Fully integrated modules for multiport concentrators Four integrated transmit and receive

Contextual Info: DATA SHEET_ NEC MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T he 2 S K 3 3 5 4 is N -ch an nel M O S Field E ffe ct T ra n sisto r PART NUMBER PACKAGE

F90 P02

Abstract: 25p05 MZJ 200
Contextual Info: PACKAGING TAPING SPECIFICATIONS SURFACE MOUNT TYPE TAPING 2P0.05 F1.5 +-00.1 Fig.3 4P0.1 2P0.1 F1.5 -+00.1 0.6max. 0.6max. B B W F W F 4P0.1 1.75P0.1 Fig.1 1.75P0.1 ?CARRIER TAPE [mm] A A P P 4P0.1 0.6max. F1.5 +0.1 -0 2P0.1 0.6max. B S B B W F W F 2P0.1

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N04CHE, NP84N04DHE, NP84N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N055CHE, NP84N055DHE, NP84N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

RX-2 -G

Abstract: RX-3 -G td 57 31 TD-214 TD-431
Contextual Info: Networking Components FAST ETHERNET 10BASE-T/100BASE-TX TR ANSFORMER MODULES o ELECTRICAL CHARACTERISTICS @25 C Rise Time & Fall Time @5.0ns Max , Hi-Pot Test @60Sec 1500Vrms, OCL @8mA DC Bias 350uH(Min) Insertion Loss (dB Max) 1~100 MHz Model LF8225 LF8231