TD 110 Search Results

2700-MHz

Abstract: IFD 258 JESD51-7 MAX9995 MAX9995ETX ifd 380
Contextual Info: KIT ATION EVALU E L B A AVAIL 19-3383; Rev 1; 3/11 Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch The MAX9995 dual, high-linearity, downconversion mixer provides 6.1dB gain, +25.6dBm IIP3, and 9.8dB NF for WCDMA, TD-SCDMA, LTE, TD-LTE, and

Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGK 120N60B IXGX 120N60B VCES ^C25 V CE sat Maximum Ratings Symbol Test C onditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 600 600 V V v vGEM Continuous Transient ±20 ±30

Contextual Info: □ IXYS HIPerFET IXFK90N20Q IXFK90N20QS Power MOSFETs V DSS ^D25 D DS on Q Class Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS Continuous ±20 V V GSM Transient ±30 V DGR ^D25 Tc = 25°C

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: ISSUE NO : Rev: DATE OF ISSUE : 2012.11.19 SPECIFICATION MODEL : SPSWH2S26S2G WHITE SIDE VIEW CUSTOMER : CUSTOMER CHECKED CHECKED APPROVED SAMSUNG ELECTRONICS CO., LTD. DRAWN CHECKED APPROVED SAMSUNG ELECTRONICS CO., Ltd. td. SAN #24 NONGSEONONGSEO-DONG, DONG, GIHEUNGGIHEUNG-GU,

thyristor TT 45 N 1200

Contextual Info: Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT W3C 115 N 12.18 ISOPACK N W3 Elektrische Eigenschaften / Electrical properties Datenblatt gilt auch für TD W3H Höchstzulässige Werte / Maximum rated values

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TD BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL DF BEL FUSE INC. LEDI PDLARITY PIN 27 PIN 28 CDLDR + GREEN - - — ^ ELECTRICAL CHARACTERISTICS 6 25°C

Contextual Info: FS3861 Data Sheet Intelligent Charger Management Controller Rev. 1.0 Dec. 2004 Fortune Semiconductor Corp. TD-0412012 CR-004 FS3861 Taipei Office: 28F, No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874

8B10B

Abstract: C035 CL45 P802 TLK3138
Contextual Info: TLK3138 www.ti.com SLLS762C – FEBRUARY 2007 – REVISED DECEMBER 2009 Dual XAUI Transceiver Check for Samples: TLK3138 • • • • • • • • 1 XGMII Extender Sublayer APPLICATIONS • 10 Gigabit Ethernet Servers and Routers TLK3138 TCLK(0) TD(31.0)

0315H

Contextual Info: UNCONTROLLED DOCUMENT REV. A B PART NUMBER REV. SSL-LX25783AW-TD B E.C.N. NUMBER AND REVISION COMMENTS REDRAWN, UPDATED SPECS. E.C.N. #10702. DATE 5.10.95 1.10.01 2,30 [0,091] f E ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X 7,00 [0,276] PARAMETER MIN PEAK WAVELENGTH

Contextual Info: Fo r t une Semiconductor Corporation 富晶半導體股份有限公司 FS9721B 2,400 counts auto range DMM IC. Data Sheet TD-0405003 Rev. 1.3 This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the

AD1P

Abstract: FS9952
Contextual Info: Fo r t une Semiconductor Corporation 富晶半導體股份有限公司 FS9952_LP1 2,000 counts auto range DMM IC. Data Sheet TD-0404027 Rev. 1.7 This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the

FS9721B

Contextual Info: Fo r t une Semiconductor Corporation 富晶半導體股份有限公司 FS9721B 2,400 counts auto range DMM IC. Data Sheet TD-0412005 Rev. 1.4 This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the

Contextual Info: EUPEC blE D • SMOaST? OOOllMT 101 « U P E C TT 32 F, TD 32 F, DT 32 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

Contextual Info: EUPEC blE D • 34G3EÌ7 G001135 bl? « U P E C TT 18 F, TD 18 F, DT 18 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

TD1064AAG-011

Abstract: 13001 s 8b TRANSISTOR reticon tad-32 RETICON ccd MC33269ST-5.0T3 diagram transistor 13001
Contextual Info: n ¿'^EGzG RETICON TD Series Single Output TDI Array CCD TDI Array Introduction Output • EG&G Reticon’s Single Output TDI arrays are high-speed, CCD imagers designed to operate in the Time Delay Integra­ tion TDI mode. Applications for Reticon TDI arrays include

Contextual Info: TLK3138 www.ti.com SLLS762A – FEBRUARY 2007 – REVISED APRIL 2007 Dual XAUI Transceiver • • • • • • • • 1 XGMII Extender Sublayer APPLICATIONS 10 Gigabit Ethernet Servers and Routers TLK3138 TCLK(0) TD(31.0) TDP/N[3:0]0 4 TC(3.0) RCLK(0)

Contextual Info: TLK3118 Redundant XAUI Transceiver www.ti.com • • • • • • • • • • • Fabricated in Advanced 130-nm CMOS Technology Package: Small Footprint 21x21mm, 400-Ball, Fine Pitch 1mm PBGA TLK3118 TDP/N[3:0]0 TCLK TD(31.0) TC(3.0) RCLK RD(31.0)

Contextual Info: Fo r t une Semiconductor Corporation 富晶半導體股份有限公司 FS501 18-bit ADC with 1 low noise OPAMP. Data Sheet TD-0404034 Rev. 3.8 THIS MANUAL CONTAINS NEW PRODUCT INFORMATION. FORTUNE SEMICONDUCTOR CORPORATION RESERVES THE RIGHTS TO MODIFY THE PRODUCT SPECIFICATION WITHOUT

Contextual Info: PRELIMINARY IDT54/74FCT3245/A 3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 M IC R O N C E M O S Technology • ESD > 2 0 00V per M IL -S TD -883, Method 3015; > 2 0 0 V using machine model C - 200pF, R - 0

Contextual Info: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V 130 A ^D25 R DS on = 18 mQ ” N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions V v DSS Td = 25°C to 150°C

Contextual Info: {£ HARRIS H A - 5102/883 Dual, Low Noise, High Performance Operational Amplifier January 1989 Features D escrip tio n • This Circuit Is Processed In Accordance to M ll-S td 8 8 3 and Is Fully Conform ant Under the Provisions of Paragraph 1.2.1. Low noise and high performance are key words describing

Contextual Info: TOSHIBA {DISCR ETE /OPTO} 9097250 TOSHIBA ¿/aììùUii T i D e I td^SSD 001^723 7 DISCRETE/OPTO TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S I 5 7 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (zr-Mos > TENTATIVE INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: GM71 C S 17400C/CL S e m i c o n C o . .L td . 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM 71C(S) 17400C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C(S)17400C/CL has realized higher density, higher performance and