TCI DIODE Search Results

Contextual Info: TCI 02 128 X 1 CCD LINEAR IMAGE SENSOR 0 2664, APRIL 1 98 2 -REVISED JULY 1989 1 2 8 x 1 Sensor Element Organization CERAMIC DUAL-IN-LINE PACKAGE Virtuai-Phase N-Channel Silicon MOS Technology TOP VIEW High Quantum Efficiency Output Signal Approximately

mc6820

Abstract: MC6820 PIA theAD571 pia MC6820 UAA 1006 UAA 1008 ANI 1015 D571 MC6820 pin diagram AD571JD
Contextual Info: ANALOG DEVICES □ Integrated Circuit 10-Bit Analog to Digital Converter FEATURES Complete A /D Converter with Reference and Clock Fast Successive Approximation Conversion — 25|xs; No Missing Codes Over Temperature 0 tci +70°C — A D571K -55° C to +125°C - AD571S

Contextual Info: TCI 06-1 2592 X 1 CCD LINEAR IMAGE SENSOR 0 2 9 9 2 , SEPTEMBER 1 9 8 6 -R E V IS E D JULY 1 989 • 2 5 9 2 x 1 Sensor Element Organization • Virtual-Phase N-Channel Silicon MOS Technology • High Quantum Efficiency TOP VIEW C 1 OSC Enhanced Blue Response

CA3240C

Abstract: CA3240AE1
Contextual Info: Operational Amplifiers CA3240A, CA3240 Dual BiMOS Operational Amplifiers W ith M O S F E T Input, Bipolar O utput Features: • D ual version o f CA3140 ■ In te rn a lly com pensated ■ M O S FET in p u t stage a Very high in p u t im pedance (ZiN) - 1.5 TCI typ.

tc104 ccd

Contextual Info: TCI 04-1 3456 X 1 CCD LINEAR IMAGE SENSOR D 2 6 8 7 , DECEM BER 1 9 8 3 -R E V IS E D JU L Y 1 9 8 9 • 3465 x 1 Sensor Element Organization • Virtual-Phase N-Channel Silicon MOS Technology • High Quantum Efficiency • Enhanced Blue Response • Output Signal Approximately 0.6 Volt

oIR 503

Abstract: Tektronix schematic schottky transistor spice
Contextual Info: TEKTRONI X INC/ INTEGR AT ED TCI/ INTEGRATED EIE D fiTDtilEM Q G G O n b CIRCUITS OPERATION , I L l f \ l. BIPOLAR PRODUCTS .ri. B “- r s p e c if ic a t io n s ! ORDERING INFORMATION j T -V 2 -2 Ï QUICKCHIP 6 FAMILY OF INTEGRATED CIRCUIT ARRAYS The QuickChip 6 family of Inte­

siemens rs 1016

Contextual Info: SIEMENS BRT21/22/23 SITAC AC SWITCHES OPTOCOUPLER FEATURES Package Dimensions in Inches m m fli fr rï * v drm =400 to 800 V * •t h m s = 3 ° 0 m A * d v /d tCIà 1 0,000 V/(is * E le c tric a lly In s u la te d Betw een In p u t and O u tp u t C irc u it

TO72 package

Abstract: TCI diode ZN490 digilin Low Leakage Diode
Contextual Info: MSI/LSI, DIGITAL, DIGILIN & LINEAR CIRCUITS ZN490 DUAL PICO -AM PERE DIODE FEATU RES • Ultra low leakage diode - 2 p A • Matched forward voltage drop - 5mV • High reverse impedance • Low capacitance - 2pF • CDI technology • 4 lead TO -72 package

Contextual Info: HOLTEK r n r ^ HT47C20 8-Bit Microcontroller Features • • • • • • • • • • • • • • O perating voltage: 2.4V~3.6V E ig h t bidirectional I/O lines Four in put lines One in terru p t in put One 16-bit program m able tim er/event counter w ith PFD program m able

Lambda diode

Abstract: tx 2G SFH480403 TCI diode
Contextual Info: SIEMENS SFH 48 0442 SFH 48 0443 Preliminary Datasheet InGaAs - Laser Diode 1000 mW Wavelength 940 run, chip on carrier Data differing from SFH 48 0402 and SFH 48 0403: Characteristic Data: Para meter: Typical Values Unit Condition nm nm rïiA W /A mA rnV Ohm

type k thermocouple input characteristics profile

Abstract: thermal resistance Thermocouple circuit type t Thermocouple Type K material TCI model 571 electronic oven control oven temperature sensors transistor subtitution ULN2003A ULN2068B
Contextual Info: THERMAL RESISTANCE— A RELIABILITY CONSIDERATION by Kenneth E. Manchester & Donald W. Bird More and more the semiconductor component supplier and the ultimate system user are becoming aware of the need for reliable components. Most failure mechanisms responsible for reliability

UV led 254 nm

Abstract: UV diode 280 nm photo diode uv 254 nm uv LED UV LED 280 nm UV diode 254 nm
Contextual Info: 3mm Infrared Discrete LED Silicon PIN Photo Diode NEW Dialight 521-9741 Features 4.85 [.191] .56 [.022] .64 [.025] 4.1 [.161] 3.9 [.153] 3.8 [.150] .50 [.020] 3.0 [.168] • Short Switching Time • High Spectral Sensitivity • Daylight Filtered for Near Infrared Range

oven temperature sensors

Abstract: thermal resistance measurement ULN2003A ULN2068B ALLEGRO MICROSYSTEMS
Contextual Info: APPLICATIONS INFORMATION THERMAL RESISTANCE— A RELIABILITY CONSIDERATION THERMAL RESISTANCE— A RELIABILITY CONSIDERATION More and more the semiconductor component supplier and the ultimate system user are becoming aware of the need for reliable components. Most failure mechanisms responsible for reliability

LA12

Abstract: SLDA-61S16-XX
Contextual Info: SLDA-61S16-XX Series Multielement Array Features • • • • • 1.32 Diodes spaced on 1.57 mm centers Contacts along both edges of the array Common cathode contact on the back Solderable anode contacts on top surface Up to 16 elements per monolithic array

LA12

Abstract: SLDA-61S25-XX
Contextual Info: SLDA-61S25-XX Series Multielement Array Features • • • • 2.29 0.090" Diodes spaced on 2.54 mm centers Common cathode contact on the back Solderable anode contacts on top surface Up to 8 elements per monolithic array 1.27 2.54 (0.1") 0.51 Description

Contextual Info: HOLTEK r r HT46C20 8-Bit Microcontroller Features • • • • • • • • • • • O p e ra tin g voltage: 4.5V~5.5V 21 b id ire ctio n a l I/O lines O ne in te r r u p t in p u t O ne 8-bit p ro g ram m ab le tim e r/e v e n t co u n ter w ith P FD p rogram m able

LF50

Contextual Info: bOE D • fl23SbGS DDi4b551 57b « S I E G -7=<Y/-&7 SIEMENS SFH4210 SIEMENS AKTIENGESELLSCHAF INFRARED EMITTING DIODE T018PA C K A G E ^ ■L Preliminary Data Sheet FEATURES Maximum Ratings * InGaAsP/lnP IRED Operating Temperature Range at Case Tc Storage Temperature Range (T3To)

CMP02CJ

Abstract: CMP02CP CMP02CS CMP-02C 02cj CMP-01 CMP-02 CMP-02E CMP02EP CMP 02GR
Contextual Info: Low Input Current Precision Comparator CMP-02 ANALOG ► DEVICES G EN ER AL DESCRIPTION FEATURES • • • • • • • • The CMP-02 is a monolithic low input current comparator Low Offset V ö llig e 0.3mV Typ, 0.8mV Max using an advanced NPN-Schottky Barrier Diode process. It

Contextual Info: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.083 (2.1) 0.067 (1.7) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

QEB421

Contextual Info: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

QED634

Abstract: QSD122
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED634 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM SCHEMATIC 0.240 (6.10) 0.215 (5.45) ANODE 0.020 (0.51) SQ. (2X) CATHODE NOTES:

Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED633 QED634 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) SCHEMATIC NOTES: ANODE

GEO06137

Abstract: OHRD1938 Q62702-P835
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit SFH 305 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability

QED233

Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED233 QED234 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) SCHEMATIC NOTES: ANODE