TCH 9 157 Search Results

MGFC42V5964A

Abstract: P141G
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> « M G FC 42 V 5 9 6 4 A »e 5 .9 — 6.4G H z BAND 16W INTERNALLY M ATCHED GaAs F E T DESCRIPTION The M G F C 4 2 V 5 9 6 4 A is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especailly designed fo r use in 5.9 ~ 6.4

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 42 V 5 964 A 5 .9 — 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET ’ ,r v s P 8' 0'1 DESCRIPTION The M G F C 4 2 V 5 9 6 4 A is an in te rna ily im p e d a n ce -m a tch e d GaAs power F ET especailty designed fo r use in 5.9 ~ 6.4

pj 59

Abstract: MGFC38V5964
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5964 5 .9 — 6 .4 G H z BAN D 6 W IN TE R N A L L Y M A TC H E D GaAs F E T DESCRIPTION The M G F C 3 8 V 5 9 6 4 is an in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed fo r use in 5 . 9 — 6 .4

Contextual Info: C A T A L O G L IS T I N O M I C R O SWI TCH a w y ih m i 531*» ïu i O 3 ~ a» 2 « of * w i a n w -w k y w k i t iw u i t t o w u r r 101HS1 SW ITCH-BASIC | u | NNNM, NIMM tSËJ FEO. MFR. CODE 9 1 9 2 9 ñ M ETAL X .0 6 5 MAX PRETRAVEL— ENCLOSURE -.140 REF

"routing tables"

Contextual Info: PM I 1^^ I A d v a n c e In fo r m a tio n PMC-970113 PMC-Sierra, Inc. T# PM 3351 ISSUE 1 Fast EtherDirector PM3351 F a s t E th e r D i r e c t o r SINGLE FAST PORT ETHERNET SWI TCH A d v a n c e Information I s s u e 1: J a n u a r y 1 9 9 7 PMC-Sierra, Inc.

MGFC39V4450A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V 4450A p «EUN»N*BV , cw*mie 4 . 4 ' 5 .0 G H z BAND 8 W INTERNALLY M ATCHED GaAs FE T Som e P»r,i DESCRIPTION T he M G F C 3 9 V 4 4 5 0 A is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 4.4 ~ 5.0

HAT2137H

Abstract: TD 6200 ap
Contextual Info: HAT2137H Silicon N Channel Power MOS FET Power Switching ADE-208-1579B Z Preliminary 3rd. Edition Dec. 2002 Features • • • • Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 mΩ typ. (at VGS = 10 V)

HAT2129H

Abstract: ADE-208-1577B
Contextual Info: HAT2129H Silicon N Channel Power MOS FET Power Switching ADE-208-1577B Z Preliminary 3rd. Edition Aug. 2002 Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6 mΩ typ. (at VGS = 10 V)

HAT2134H

Contextual Info: HAT2134H Silicon N Channel Power MOS FET Power Switching ADE-208-1578A Z Preliminary 2nd. Edition Aug. 2002 Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.3 mΩ typ. (at VGS = 10 V)

C1576

Contextual Info: CYPRESS MbE D SEMICONDUCTOR SSñRbbE D DG b L f 33 S D CYP CY7C157A CYPRESS SEMICONDUCTOR Features Functional Description • O ptim ized for u se w ith R IS C p ro ces­ so rs, Includin g SPARC T h e C Y 7C 157A cach e sto rag e u n it is a hig h-perform ance C M O S static R A M o r ­

HAT2129H

Contextual Info: HAT2129H Silicon N Channel Power MOS FET Power Switching REJ03G0049-0400Z Previous ADE-208-1577B(Z Rev.4.00 Jun.23.2003 Features • • • • Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6 mΩ typ. (at VGS = 10 V)

HB526A464EN-10

Abstract: C0-C31 24C02 HB526A464EN-12 Hitachi DSA0068
Contextual Info: HB526A464EN-10/12 1,048,576-Word x 64 x 4bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8Byte DIMM Rev. 1.0 Apr. 17, 1996 The HB526A464EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8 Byte processor applications.

fmi*07N50E

Abstract: fmi07n50e
Contextual Info: FMI07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

FMV07N50E

Contextual Info: FMV07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

fmc07

Contextual Info: FMC07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

Contextual Info: DATE DRAWN Jan.-23-'08 CHECKED Jan.-23-'08 CHECKED Jan.-23-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

F7007N

Abstract: T151 1SV02 WFA 21
Contextual Info: Semiconductor Products r . N channel, Single 30V/7A I^ Jl Features Low-on resistance V g s = V driving 4 4 V G S= V IEÜJ J7 G - S f f i y x J - - ? ! * - K ftiS I Avalanche capability rating Higher pulse-current Including G-S zener diode Maximum ratings and characteristics

SPF 455

Abstract: SPF-1576 SPF 455 H 5 SPF-1676
Contextual Info: SPF-1576, -1676 2-26 GHz Low Noise PHEMT GaAs FET Preliminary Data Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.55dB Typical at 12 GHz - High Associated Gain: 10dB Typical at 12 GHz • Low Cost Ceramic Package - Tape and Reel Packaging Available

Contextual Info: TCH Low ESR Hermetic Series SMD Low ESR Tantalum Capacitors with Conductive Polymer Electrode in Hermetic Package FEATURES • • • • • • • • Aerospace & Hi-Rel applications Low ESR conductive polymer electrode Ceramic case hermetic packaging

Contextual Info: TCH Low ESR Hermetic Series SMD Low ESR Tantalum Capacitors with Conductive Polymer Electrode in Hermetic Package FEATURES • • • • • • • • Aerospace & Hi-Rel applications Low ESR conductive polymer electrode Ceramic case hermetic packaging

TXC 18 E60

Abstract: DSP56001 users manual 27 MHZ rc receiver 27 MHZ rc transmitter D604 TXC 100 M60 1 pF ceramic capacitor C001 PC D400 E -3G TA 7504 samtec TW serial connectors datasheets
Contextual Info: Order this document by DSP56001/D Freescale Semiconductor DSP56001 Freescale Semiconductor, Inc. 24-Bit General Purpose Digital Signal Processor Pin Grid Array PGA Available in an 88 pin ceramic through-hole package. Ceramic Quad Flat Pack (CQFP) The DSP56001 is a member of Motorola’s family of

DSP56000

Abstract: DSP56001 Robinson Nugent PGA socket 32X24 Ceramic Capacitors 104 m30 Nippon capacitors
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA 24-Bit General Purpose Digital Signal Processor Order this document by DSP56001/D DSP56001 Pin Grid Array PGA Available in an 88 pin ceramic through-hole package.

DSP56000

Abstract: DSP56001 0B4000 4CS088-01TG 256X24 DSP56001 host port Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 24-Bit General Purpose Digital Signal Processor Order this document by DSP56001/D DSP56001 Pin Grid Array PGA Available in an 88 pin ceramic through-hole package. Ceramic Quad Flat Pack (CQFP) The DSP56001 is a member of Motorola’s family of

DSP56001 users manual

Abstract: f32 motorola DSP56000 DSP56001 SCF 112 S1535 B1401 Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 24-Bit General Purpose Digital Signal Processor Order this document by DSP56001/D DSP56001 Pin Grid Array PGA Available in an 88 pin ceramic through-hole package. Ceramic Quad Flat Pack (CQFP) The DSP56001 is a member of MotorolaÕs family of