Part Number
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    TCE 0041 Search Results

    TCE 0041 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54121-410041600LF
    Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Single Row, 4 Positions, 2.54mm (0.100in) Pitch. PDF
    68004-112HLF
    Amphenol Communications Solutions BergStik® 2.54mm, Board to Board connector, Unshrouded Header, Through Hole, Single Row, 12 Positions, 2.54 mm Pitch, Vertical, 8.08 mm (0.318in) Mating, 2.72 mm (0.107in) Tail. PDF
    68004-114HLF
    Amphenol Communications Solutions BergStik® 2.54mm, Board to Board connector, Unshrouded Header, Through Hole, Single Row, 14 Positions, 2.54 mm Pitch, Vertical, 8.08 mm (0.318in) Mating, 2.72 mm (0.107in) Tail. PDF
    68004-102
    Amphenol Communications Solutions 68004-102-B/S II SR PDF
    68004-128HLF
    Amphenol Communications Solutions BergStik® 2.54mm, Board to Board connector, Unshrouded Header, Through Hole, Single Row, 28 Positions, 2.54 mm Pitch, Vertical, 8.08 mm (0.318in) Mating, 2.72 mm (0.107in) Tail. PDF

    TCE 0041 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


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    PDF

    3314A

    Abstract: SA 20 PLS AT49SN12804 AT49SV12804 PR1-PR16
    Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


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    PDF

    3525a

    Abstract: MRC D17 AT52SQ1283J PA30 PA31
    Contextual Info: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.65V to 1.95V VCC 2.7V to 3.1V VCCQ for Flash + PSRAM 128-Mbit Flash Features • 8M x 16 Organization • High Performance • •


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    128-Mbit 32-Mbit 88-ball 3525a MRC D17 AT52SQ1283J PA30 PA31 PDF

    AT49SN6416

    Abstract: AT49SN6416T Hardlock drive CSA43
    Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


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    3464C AT49SN6416 AT49SN6416T Hardlock drive CSA43 PDF

    AT49SN6416

    Abstract: AT49SN6416T SA21D 56c2 2F360
    Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


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    3464B AT49SN6416 AT49SN6416T SA21D 56c2 2F360 PDF

    Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture


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    3464C PDF

    W27e256

    Abstract: W29CO20 *27e256 w29c020-70 CA0008 W27E257-12 W27E257-10 Winbond w27e256
    Contextual Info: W27EOlO 128K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27EOlO is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates on a single 5 volt power supply. The W27EOlO provides an electrical chip erase function.


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    W27EOlO 55/70/90/i 32-pin DI13100 l-408-9436666 l-408-9436668 W27e256 W29CO20 *27e256 w29c020-70 CA0008 W27E257-12 W27E257-10 Winbond w27e256 PDF

    PA30

    Abstract: PA31
    Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Asynchronous Access Time – 85 ns – Page Mode Read Time – 30 ns Sector Erase Architecture – Sixteen 4K Word Sectors with Individual Write Lockout


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    AT49BV6416

    Abstract: AT49BV6416C AT49BV6416CT
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


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    64-megabit AT49BV6416 AT49BV6416C AT49BV6416CT PDF

    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


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    64-megabit 3366B PDF

    AT49BV640D

    Abstract: AT49BV6416C AT49BV6416CT
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


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    64-megabit 3465D AT49BV640D AT49BV6416C AT49BV6416CT PDF

    SA93

    Abstract: SA97 AT49BV6416C AT49BV6416CT
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


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    64-megabit 3465B SA93 SA97 AT49BV6416C AT49BV6416CT PDF

    AT49BV640T

    Abstract: 21FFFF
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


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    64-megabit AT49BV640T 21FFFF PDF

    MRC D17

    Abstract: AT52SQ1283J PA31 la 78000 A7A1 SA135
    Contextual Info: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.65V to 1.95V VCC 2.7V to 3.1V VCCQ for Flash + PSRAM 128-Mbit Flash Features • 8M x 16 Organization • High Performance • •


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    128-Mbit 32-Mbit 88-ball 3525B MRC D17 AT52SQ1283J PA31 la 78000 A7A1 SA135 PDF

    MRC D17

    Abstract: AT52SC1283J atmel 532 atmel 614
    Contextual Info: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit/64-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.7V to 1.95V VCC 1.8V to 1.95V for VCCQ and PVCC 128-Mbit Flash Features • 8M x 16 Organization • High Performance •


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    128-Mbit 32-Mbit/64-Mbit 88-ball 3530B MRC D17 AT52SC1283J atmel 532 atmel 614 PDF

    2481D

    Abstract: AT49BN6416T AT49BN6416 AT49BV6416 AT49BV6416T 78910
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz


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    64-megabit 2481D AT49BN6416T AT49BN6416 AT49BV6416 AT49BV6416T 78910 PDF

    AT49BV128

    Abstract: PA30 PA31
    Contextual Info: Features • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Sixteen 4K Word Sectors with Individual Write Lockout – Two Hundred Fifty-four 32K Word Main Sectors with Individual Write Lockout


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    PDF

    SA97

    Abstract: AT49BV6416C AT49BV6416CT
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


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    64-megabit 3465C SA97 AT49BV6416C AT49BV6416CT PDF

    3B8000

    Abstract: SA97 sa92
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


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    64-megabit 3366B 3B8000 SA97 sa92 PDF

    AT49SN3208

    Abstract: AT49SN3208T AT49SN6416 AT49SN6416T
    Contextual Info: Features • 64-megabit 4M x 16 and 32-megabit (2M x 16) Flash Memories • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • • • – Random Access Time – 90 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 54 MHz


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    64-megabit 32-megabit 1605C AT49SN3208 AT49SN3208T AT49SN6416 AT49SN6416T PDF

    AT49BN6416

    Abstract: AT49BN6416T AT49BV6416 AT49BV6416T Hardlock drive
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz


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    64-megabit 2481C AT49BN6416 AT49BN6416T AT49BV6416 AT49BV6416T Hardlock drive PDF

    Atmel 3204

    Abstract: AT49BN3204 AT49BN3204T AT49BN6408 AT49BN6408T AT49BN6416 AT49BN6416T AT49BV641 AT49BV641T BV641
    Contextual Info: Features • 64-megabit 4M x 16 and 32-megabit (2M x 16) Flash Memories • 2.7V - 3.1V Read/Write • High Performance • • • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz


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    64-megabit 32-megabit 2481B Atmel 3204 AT49BN3204 AT49BN3204T AT49BN6408 AT49BN6408T AT49BN6416 AT49BN6416T AT49BV641 AT49BV641T BV641 PDF

    SA97

    Abstract: AT49BV6416 AT49BV6416T AT49BV642D AT49BV642
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


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    64-megabit 3451D SA97 AT49BV6416 AT49BV6416T AT49BV642D AT49BV642 PDF

    AT49BV6416

    Abstract: AT49BV6416T
    Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout


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    64-megabit AT49BV6416 AT49BV6416T PDF