TCE 0041 Search Results

TCE 0041 Result Highlights (5)

Part	Manufacturer	Description	Download
10127720-041LF	Amphenol Communications Solutions	Minitek® Pwr 3.0, Dual Row, Right Angle Through Hole Header, 4 Positions, 100u\\ Tin plating, Non GW Compatible LCP, With Pegs, Tray Packing.	PDF
68000-418HLF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded Header, Through Hole, Single Row, 18 Positions, 2.54 mm Pitch, Vertical, 5.84 mm (0.23 in.) Mating, 2.41 mm (0.095 in.) Tail	PDF
10041744-302LF	Amphenol Communications Solutions	Metral®, Backplane connectors, 1000 Series Receptacle, Right Angle Signal, 8 Row, Press-Fit, 96 Position.	PDF
10108777-10041TLF	Amphenol Communications Solutions	PCI Express® Gen 3 Card Edge Connector, Storage and Server System, Soft Tray, Vertical - Mount Connector, Through Hole Termination, 64 Positions.	PDF
68004-133HLF	Amphenol Communications Solutions	BergStik® 2.54mm, Board to Board connector, Unshrouded Header, Through Hole, Single Row, 33 Positions, 2.54 mm Pitch, Vertical, 8.08 mm (0.318in) Mating, 2.72 mm (0.107in) Tail.	PDF

TCE 0041 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture	Original		PDF
3314A Abstract: SA 20 PLS AT49SN12804 AT49SV12804 PR1-PR16 Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture	Original	3314a sa 20 pls at49sn12804 at49sv12804 +1pr1-pr16	PDF
3525a Abstract: MRC D17 AT52SQ1283J PA30 PA31 Contextual Info: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.65V to 1.95V VCC 2.7V to 3.1V VCCQ for Flash + PSRAM 128-Mbit Flash Features • 8M x 16 Organization • High Performance • •	Original	128-mbit 32-mbit 88-ball 3525a +4mrc d17 at52sq1283j pa30 pa31	PDF
AT49SN6416 Abstract: AT49SN6416T Hardlock drive CSA43 Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture	Original	3464c at49sn6416 at49sn6416t hardlock drive +1csa43	PDF
AT49SN6416 Abstract: AT49SN6416T SA21D 56c2 2F360 Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture	Original	3464b at49sn6416 at49sn6416t sa21d +256c2 2f360	PDF
Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture	Original	3464c	PDF
W27e256 Abstract: W29CO20 *27e256 w29c020-70 CA0008 W27E257-12 W27E257-10 Winbond w27e256 Contextual Info: W27EOlO 128K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27EOlO is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates on a single 5 volt power supply. The W27EOlO provides an electrical chip erase function.	Original	w27eolo 55/70/90/i 32-pin di13100 +10l-408-9436666 l-408-9436668 w27e256 w29co20 27e256 w29c020-70 ca0008 w27e257-12 w27e257-10 winbond w27e256	PDF
PA30 Abstract: PA31 Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Asynchronous Access Time – 85 ns – Page Mode Read Time – 30 ns Sector Erase Architecture – Sixteen 4K Word Sectors with Individual Write Lockout	Original	pa30 pa31	PDF
AT49BV6416 Abstract: AT49BV6416C AT49BV6416CT Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout	Original	64-megabit at49bv6416 at49bv6416c at49bv6416ct	PDF
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout	Original	64-megabit 3366b	PDF
AT49BV640D Abstract: AT49BV6416C AT49BV6416CT Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout	Original	64-megabit 3465d at49bv640d at49bv6416c +1at49bv6416ct	PDF
SA93 Abstract: SA97 AT49BV6416C AT49BV6416CT Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout	Original	64-megabit 3465b sa93 sa97 +2at49bv6416c at49bv6416ct	PDF
AT49BV640T Abstract: 21FFFF Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout	Original	64-megabit at49bv640t 21ffff	PDF
MRC D17 Abstract: AT52SQ1283J PA31 la 78000 A7A1 SA135 Contextual Info: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.65V to 1.95V VCC 2.7V to 3.1V VCCQ for Flash + PSRAM 128-Mbit Flash Features • 8M x 16 Organization • High Performance • •	Original	128-mbit 32-mbit 88-ball 3525b +6mrc d17 at52sq1283j pa31 la 78000 a7a1 sa135	PDF

MRC D17 Abstract: AT52SC1283J atmel 532 atmel 614 Contextual Info: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit/64-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.7V to 1.95V VCC 1.8V to 1.95V for VCCQ and PVCC 128-Mbit Flash Features • 8M x 16 Organization • High Performance •	Original	128-mbit 32-mbit/64-mbit 88-ball 3530b +4mrc d17 at52sc1283j atmel 532 atmel 614	PDF
2481D Abstract: AT49BN6416T AT49BN6416 AT49BV6416 AT49BV6416T 78910 Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz	Original	64-megabit 2481d at49bn6416t at49bn6416 +3at49bv6416 at49bv6416t 78910	PDF
AT49BV128 Abstract: PA30 PA31 Contextual Info: Features • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Sixteen 4K Word Sectors with Individual Write Lockout – Two Hundred Fifty-four 32K Word Main Sectors with Individual Write Lockout	Original	at49bv128 pa30 pa31	PDF
SA97 Abstract: AT49BV6416C AT49BV6416CT Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout	Original	64-megabit 3465c sa97 at49bv6416c +1at49bv6416ct	PDF
3B8000 Abstract: SA97 sa92 Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout	Original	64-megabit 3366b 3b8000 sa97 +1sa92	PDF
AT49SN3208 Abstract: AT49SN3208T AT49SN6416 AT49SN6416T Contextual Info: Features • 64-megabit 4M x 16 and 32-megabit (2M x 16) Flash Memories • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • • • – Random Access Time – 90 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 54 MHz	Original	64-megabit 32-megabit 1605c at49sn3208 +3at49sn3208t at49sn6416 at49sn6416t	PDF
AT49BN6416 Abstract: AT49BN6416T AT49BV6416 AT49BV6416T Hardlock drive Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz	Original	64-megabit 2481c at49bn6416 at49bn6416t +3at49bv6416 at49bv6416t hardlock drive	PDF
Atmel 3204 Abstract: AT49BN3204 AT49BN3204T AT49BN6408 AT49BN6408T AT49BN6416 AT49BN6416T AT49BV641 AT49BV641T BV641 Contextual Info: Features • 64-megabit 4M x 16 and 32-megabit (2M x 16) Flash Memories • 2.7V - 3.1V Read/Write • High Performance • • • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz	Original	64-megabit 32-megabit 2481b atmel 3204 +9at49bn3204 at49bn3204t at49bn6408 at49bn6408t at49bn6416 at49bn6416t at49bv641 at49bv641t bv641	PDF
SA97 Abstract: AT49BV6416 AT49BV6416T AT49BV642D AT49BV642 Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout	Original	64-megabit 3451d sa97 at49bv6416 +3at49bv6416t at49bv642d at49bv642	PDF
AT49BV6416 Abstract: AT49BV6416T Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout	Original	64-megabit at49bv6416 at49bv6416t	PDF

TCE 0041 Search Results

TCE 0041 Result Highlights (5)

TCE 0041 Datasheets Context Search

3314A

3525a

AT49SN6416

AT49SN6416

W27e256

PA30

AT49BV6416

AT49BV640D

SA93

AT49BV640T

MRC D17

MRC D17

2481D

AT49BV128

SA97

3B8000

AT49SN3208

AT49BN6416

Atmel 3204

SA97

AT49BV6416