TCA 505 B Search Results

smd transistor HY 30

Abstract: smd transistor HY 10
Contextual Info: TCA 505 B Revision History: Original Version 09.91 Previous Releases: TCA 505 Page Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exeeding only one of these values may cause ir­ reversible damage to the integrated circuit.

siemens THY H 75 B 110

Abstract: siemens THY F 75 A siemens THY M 75 A Q67000-A8342 siemens THY k 75 A siemens thy tca 505 chip inductive proximity detector ic TCA 505 B TCA505BG
Contextual Info: SIEMENS TCA 505 BG 1C for Inductive Proximity Switches with Short-Circuit Protection Bipolar IC Preliminary Data Features • Wide supply voltage of 3.1 to 4.5 V and 4 to 40 V • Low current consumption of less than 0.8 mA • Integrated output stage for up to 60 mA

smd transistor cy 813

Abstract: TCA505A inductive proximity detector ic TCA505 B TCA505G gg3s
Contextual Info: 47E D SIEMENS • fl235b05 003S3fl5 4 ■ S I E 6 SIEMENS AKTIEN6ESELLSCHAF ^ ¿ 6 - 0 3 1C for Inductive Proximity Switches with Short-Circuit Protection TCA 505 Bipolar IC Preliminary Data Features • • • • • • • • • • Wide supply voltage of 31 to 4.5 V

Contextual Info: SIEMENS IC for Inductive Proximity Switches with Short-Circuit Protection TCA 505 B P re lim in a ry Data F eatures • W ide s u p p ly voltage of 3.1 to 4.5 V and 4 to 40 V • Low cu rre n t con su m p tio n of less than 0.8 m A • Integrated o u tpu t stage fo r up to 60 m A

VOGT 503

Abstract: 503 20 010 10 vogt vogt 503 20 vogt l9 TCA440N vogt 503 20 010 10 vogt l8 VOGT 503 10 VOGT 505 vogt l3
Contextual Info: TCA 440-N DESCRIPTION FEATURES TCA440 is a m onolithic 1C, especially devel­ oped for AM receivers up to 50MHz. It in­ cludes a RF stage with AGC, a balanced mixer, separate oscillator and an IF am plifi­ er with AGC. Because of its low current consumption and o f its internal stabilization

MSD 7818

Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Contextual Info: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1

Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7374200BNS/SG is a 4M x 36 bits Dynamic RAM MODULE w hich is assembled 9 pieces of 4M x 4bit DRAMs in 24 26 pin SOJ package on the printed circuit board w ith decoupling capacitors. The GM M 7374200BNS/SG is optim ized for

Contextual Info: Product Specifications PART NO: VL43B2863A-H0S-G9S-K9S REV: 1.0 General Information 1GB 128MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B2863A is a 128M X 72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

m2137

Contextual Info: b427525 Q0I4212,:Ì bll M N E C E MOS INTEGRATED CIRCUIT /¿PD4 2 S 1 6 1 0 0 ,4 2 S 1 7 1 0 0 a 16 M BIT D Y N A M IC RAM FAST PAGE M O DE P R E L I M I N A R Y -DESCRIPTIO N The NEC //PD42S16100 and /¿PD42S17100 are 16 777 216 words by 1 bit dynamic CMOS RAM with

LA80P

Abstract: marking 80L
Contextual Info: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u PD42S17180L and n PD42S18170L are 1 048 576 words by 18 b its

DNR2

Abstract: GE SG80 S1
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7321010ES/SG is an lM x 32 bits D y n a m ic R A M M O D U L E w h ic h is assem bled 8 pieces o f 1M x 4bit EDO DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The G M M 7321010ES/SG is

HY514260B

Contextual Info: »HYUNDAI HY514260B Series 256K X 1 6 - b lt CMOS DRAM w ith 2CAS PRELIMINARY DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

D42S4260

Abstract: 424260 NEC PD42S4260-70 424260-70
Contextual Info: NEC MOS INTEGRATED CIRCUIT juPD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿iPD42S4260, 424260 are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page m ode and byte read/w rite m ode capability realize high speed access and lo w pow er consum ption.

D4242

Abstract: IC 741 cn
Contextual Info: b 4 E 7 5 2 S DOMEMOS T 2 D B i N E C E MOS INTEGRATED C IR CU IT / ¡P D 4 2 S 1 6 1 7 0 L ,4 2 S 1 7 1 7 0 L ,4 2 S 1 8 1 7 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE W R ITE M O DE P R E LIM IN A R Y -DESCRIPTIO N The NEC u PD42S16170L, u PD42S17170L and

isl 6251 schematic

Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.

555 timer

Abstract: 555 timer 38 khz HMCS43 ARM13 tca 311 555 timer datasheet HMCS400 555 TIMER APPLICATIONS ADE-502-063 09 67 025 9062
Contextual Info: HMCS400 Series Application Note ADE-502-063 Alternate Order Number Marcom Rev. 1.0 9/16/98 Hitachi Ltd. Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the

hcs500

Contextual Info: M HCS500 KEELOQ Code Hopping Decoder FEATURES PACKAGE TYPE PDIP, SOIC Security Encrypted storage of manufacturer’s code Encrypted storage of encoder keys Up to seven transmitters can be learned KEELOQ code hopping technology Normal and secure learning mechanisms

24LC02

Abstract: HCS200 HCS300 HCS301 HCS360 HCS410 HCS500 circuit diagram of Garage Door Openers HCS301
Contextual Info: M HCS500 Code Hopping Decoder FEATURES PACKAGE TYPE PDIP, SOIC Security Encrypted storage of manufacturer’s code Encrypted storage of encoder keys Up to seven transmitters can be learned KEELOQ code hopping technology Normal and secure learning mechanisms

Thomson varistor ve17

Abstract: varistors ve07 Thomson-CSF* relay VARISTOR NTC 220 VE09 0250 VE07 0250 Thomson varistor varistor Ve24 Varistor VE09 thomson-csf relay
Contextual Info: NTC THERMISTORS DESCRIPTION LEADLESS DISCS CHIPS NC12 Type/Size NC20 Climatic category Operating temperature range NN.•NR. LEADED CHIPS NJ28 NK20 2,8 3 1,75 ± 0,25 1,75 ± 0,25 0,4 0,7 ± 0,25 40/125/56 -55 +150°C D L Dmax/L Hmax/l E/tmin d/e 2,00 ± 0,3

Contextual Info: KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION The Samsung KM44C1012A is a CMOS high speed 1,048,576 bit x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

g0424

Abstract: transistor B42 350
Contextual Info: bM2752S 00’ 23bb 35Ü H N E C E / / M OS IN TEG RA TED C IR C U IT JU P D 42S 16 1 7 0 ,4 2 S 1 7 1 7 0 ,4 2 S 1 8 1 7 0 16 M B IT D Y N A M IC RAM (FA S T PA G E M O D E & B Y T E W R IT E M ODE -PRELIMINARY-DESCRIPTIO N The NEC #PD42S16170, // PD42S17170 and ¿¿PD42S18170 are 1 048 576 words by 16 bits dynamic

IC MARKING A60

Abstract: 7KD MARKING marking B44
Contextual Info: b42752S 00421flb 3fi7 M N E C E MOS INTEGRATED CIRCUIT /¿PD42 S 16400 L, 42 S 17400 L 16 M B IT D Y N A M IC RA M 3 .3 V F A S T P A G E M O D E PRELIM IN ARY IDESCRIPTIO N The NEC u PD42S16400L and u PD42S17400L are 4 194 304 words by 4 b its dynamic CMOS RAM

10 16s capacitor smd

Abstract: 226 smd capacitor RSM 2322 2222 632 series capacitor MOV 103 M 3 KV 336 smd CAPACITOR 2312 344 7 SMD resistor 474 2222 631 series capacitor SMD electrolytic capacitor
Contextual Info: Information New products and highlights i Ceramic capacitors Information Page Multilayer ceramic capacitors, NP0 10 V - 4000 V Multilayer ceramic capacitors, X7R 10 V - 2000 V Multilayer ceramic capacitors, Y5V 10 V - 250 V General purpose, high voltage capacitors 1000 V to 3000 V X7R and Y5V