TCA 355 G Search Results

305ag

Abstract: smd 4pg TCA355 TCA205 IC for Inductive Proximity Switches 8 PIN SMD IC 305 STYROFLEX Q67000-A2305 Q67000-A2444 ferrite pot core
Contextual Info: TCA 305 TCA 355 Proximity Switch TCA 305 TCA 355 Bipolar IC Features ● Lower open-loop current consumption; IS < 1 mA ● Lower output saturation voltage ● The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

STYROFLEX CAPACITOR

Abstract: STYROFLEX TCA355B P-DSO-14-1 proximity switch schematic 305ag IC for Inductive Proximity Switches STYROFLEX 200 pF TCA205 ferrite pot core
Contextual Info: TCA 305 TCA 355 Proximity Switch TCA 305 TCA 355 Bipolar IC Features ● Lower open-loop current consumption; IS < 1 mA ● Lower output saturation voltage ● The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

a2305

Abstract: 8 PIN SMD IC 305 STYROFLEX CAPACITOR 305ag Q67000-A2305 TCA 150 tca205 STYROFLEX STYROFLEX 200 pF P-DSO-14-1
Contextual Info: TCA 305 TCA 355 Proximity Switch TCA 305 TCA 355 Bipolar IC Features ● Lower open-loop current consumption; IS < 1 mA ● Lower output saturation voltage ● The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

Contextual Info: Proximity Switch Type 0TCA3O5A 0TCA3O5G T C A 305 K 0 TCA 355 B 0TCA355G TCA 305 TCA 355 Ordering Code Package Q67000-A2291 Q67000-A2305 Q67000-A2293 Q67000-A2443 Q67000-A2444 P-DIP-14 P-DSO-14 SMD MIKROPACK, 10 pins (SMD) P-DIP-8 similar to S O -8 (SMD)

Contextual Info: bOE D • SIEMENS fl235bDS 0GSD727 S73 « S I E G SIEMENS AKTIENGESELLSCHAF T ' é S - O á TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching

TCA 205 N

Abstract: TCA 200 y TCA 150 t IEB00806 IC for Inductive Proximity Switches TCA 150
Contextual Info: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar IC Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

NF 841 switching diode

Abstract: DIODE NF-841 TCA355B
Contextual Info: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

8 PIN SMD IC 305

Abstract: TCA355B NF 841 switching diode TCA 355 TCA 150 t TCA355G
Contextual Info: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar IC Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

Contextual Info: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; • Lower output saturation voltage Is < 1 mA • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

tda 6109

Abstract: V23100-V7228-F110 B32650 V23100-V7213-F104 V23100-W1224-A104 V23082-A1005-A401 V23108-A1003-B101 V23104-A1003-B101 V23100-V7228-F104 B32110-F
Contextual Info: Katalognummern-Referenz: SCHURICHT-Nummern ⇔ SIEMENS-Nummern Da im Katalog aus drucktechnischen Gründen die Siemensnummern oft nicht zusammenhängend – sondern in Produktgruppen- und Einzelexemplar-Teil aufgetrennt – dargestellt sind, finden Sie hier in einer großen Tabelle für jedes Bauteil die SCHURICHT- und die SIEMENS-Nummern

TRANSISTOR K 314

Abstract: .230 6lfl package Transistor D 798 M142 SD1495
Contextual Info: H ffS'nmnr-ìs *-*j - t m » S IV H C r U S e m i P ro g re s s P o w e re d b y T ech no log y 140 Commerce Drive Montgomeryville, PA 18936-1013 SD1495 Tel: 215 631-9840 RF & MICROWAVE TRANSISTORS 850-890MHz CLASS C, BASE STATIONS • ■ ■ ■ ■ ■

AN2426

Abstract: GM71C16400AJ6 GM71C16400
Contextual Info: GM71C16400A LG Semicon Co.,Ltd. 4,194,304 W ORDS x 4 BIT CMOS DYNAM IC RAM Description Pin Configuration The GM 71C16400A is the new generation dynamic RAM organized 4,194,304 x 4 Bit. GM71C16400A has realized higher density, higher performance and various functions by utilizing advanced CMOS

Hall Siemens hkz 101

Abstract: HKZ101 Siemens hkz TCA205A Q67000-A9002-A401 Hall-Effect-Sensors HKZ101 TCA355G siemens proximity sensor ic TCA 792 TcA305A
Contextual Info: Hall-Effect Vane Switch HKZ 101 Features Bipolar 1C • • • • • • • • Contactless switch with open collector output 40 mA Static switching High switching frequency Herm etically sealed with plastic Unaffected by dirt, light, vibration Large temperature and voltage range

1gg6

Contextual Info: Agilent HMMC-5032 17.7–32 GHz Amplifier 1GG6-8009 Data Sheet Features • • • • • 22 dBm output P –1 dB 8 dB gain 50 Ω input/output matching Small size Bias: 4.5 volts, 250 mA Chip size: Chip size tolerance: Chip thickness: Pad dimensions: 1370 x 770 µm (53.3 x 30.0 mils)

GM71C4400

Abstract: 71c4400 M71C4400
Contextual Info: GM71C4400C/CL LG Semicon Co.,Ltd. 1,048,576 W ORDS x 4BIT CMOS DYNAM IC RAM Description Features The G M 71C4400C/CL is the new generation dynamic RAM organized 1,048,576 x 4 bit. G M 71C4400C/CL has realized higher density, higher performance and various functions by utilizing

45580

Abstract: 1gg6-8002 TCA 430 1gg6 TCA 975 HMMC-5020 hmmc-5 tca 761
Contextual Info: Agilent HMMC-5618 6–20 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:

MSP A14

Abstract: TCA 355 G I22u
Contextual Info: LOGIC DEVICES INC IbE D • SSbSTOS 00G0fe.7b S ■ 16 x 16-bit Parallel Multiplier_ _ L M U 1 8 Features Description_ T - H S ~ 0 1 □ 35 ns worst-case multiply time The LMU18 is a 16-bit parallel multi­ plier featuring high speed and low

Contextual Info: 3 : Te le sco p ic Ra ils 3 .1 Te le scopic Ra ils 6 0 k g D Despit e t heir rugged const ruct ion, t hese are am ong t he slim m est t elescopic rails avaiable on t he m arket . All types can be locked in the extended position and are itted with a quick release latch. The load carrying capacity of

TCA 290

Abstract: HR05 FORM0263 HR93
Contextual Info: EMC Technology Procedure: STANDARD Document Number: High Reliability Acceptance Testing TP-8965 Rev.: C OPERATING Application: PROCEDURE HR Series Attenuators and Thermopads Written By: Original Issue Date: D. Raymond 11-28-03 Approved By: Approved By: Approved By:

TCA 356

Abstract: ma 8630 Edd 44 LMU18 B953 TCA 200
Contextual Info: LMU18 1 6 x 1 6-bit Parallel M ultiplier Features Description □ 3 5 n s w orst-case m u ltip ly tim e The L M U 18 is a 16-bit p arallel m u lti­ p lier featu ring h ig h speed and low po w er consum ption. T he L M U 18 is an 84-pin device w hich p rovides

45580

Abstract: 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Contextual Info: Agilent HMMC-5617 6–18 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:

Contextual Info: LMU18 1 6 x 1 6-bit Parallel Multiplier Features Description □ 35 ns worst-case multiply time The LMU18 is a 16-bit parallel multi­ plier featuring high speed and low power consumption. The LMU18 is an 84-pin device which provides simultaneous access to all outputs.

GM71C4263

Abstract: GM71C4
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71C S 4263D/DL is the new generation dynamic RAM organized 262,144 words x 16 bit. GM71C(S)4263D/DL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo g y . The

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-7v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the