TCA 335 A Search Results

tca 335 A

Abstract: tca 765 TCA335A
Contextual Info: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range

2761 l

Abstract: TAA2761A TAAS61A TCA325A k 2761 A 2761 I TAA2761 taa761a TAA 2761 A tca325
Contextual Info: Internationale Vergleichstypen: T C A 3 1 1 A , T C A 3 1 5 A , TGA321A» TCÄ325A» TCA 331 A, TCA 335 A, TÄÄ 761 A, TÄÄ 765 A, TAAS61A, TAA8S5A» TAÄ 2761 A, TAÄ 2765 A, TAÄ 4761 A, TÄÄ 4785 A Einfache, doppelte oder vierfache Operatiosisveretirker

ON5234,118

Abstract: TCP103K
Contextual Info: Ceramic Disc Capacitors - CCD/TCA/TCD/TCL/TCP/TCO/TCV GENERAL SPECIFICATIONS Arco Ceramic Disc Capacitors are designed for applications requiring high capacitance and low power factors from 12 to 1000 volts. All units are coated with a rugged “Durez” coating and are available in a variety of

TCL103K

Abstract: YST 501 CCD391 arco ceramic disc capacitors JS84 TCA223Z TCA104Z S3113 tcl tv ic
Contextual Info: Ceramic Disc Capacitors - CCD/TCA/TCD/TCL/TCP/TCO/TCV GENERAL SPECIFICATIONS Arco Ceramic Disc Capacitors are designed for applications requiring high capacitance and low power factors from 12 to 1000 volts. All units are coated with a rugged “Durez” coating and are available in a variety of

TCV104Z

Abstract: TCP104M
Contextual Info: Ceramic Disc Capacitors - TCP/TCV Class II - By-pass & Coupling Disc 100WVDC Inches mm Part Number Construction C ap. Mfd Type T o le ra n c e TC M ax. D a M a x. T h ic k n e s s L ea d S pa ce I 0 .0 0 5 TCP502K ± 10 % Y5P .3 9 0 (9 .9 ) .1 1 8 (3 .0 )

Contextual Info: T L CO M PA TIBLE GATED SQUARE WAVE GENERATOR T2L Input and outputs Output wavetrain can be started in sync with random events # 8-pin Space Saver package # Leads - thru-hole, J, Gull W ing or Tucked # Available in frequencies from 2 MHz to 100 MHz # Output frequencies controlled to w ithin ±2%

TMS44100DJ

Contextual Info: TM497EAD9B 4 194 304-WQRD BY 9-BIT DYNAMIC RAM MODULE S M M S 4 7 9 -D E C E M B E R 1992 Organization. . . 4194 304 x 9 AO SINGLE-IN-LINE P AC KA G Et TOP VIEW 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets V cc CAS DQ1 A0 A1 DQ2 A2 A3

MDIO clause 22

Abstract: MDIO clause 45 specification MDIO clause 45 tda series class d BBT3420
Contextual Info: BBT3420 Data Sheet September 14, 2005 FN7481.1 Quad 2.488-3.1875Gbps/Channel Transceiver 1 Features • Receive signal detect and 16 levels of transmission medium equalization • Four channels of transmitter and receiver with serial data transfer rates of 2.488-3.1875Gbps/channel with full rate

Contextual Info: S IE M E N S SAB 80C482, SAB 80C382 Telephone Controller Single-Chip 8-Bit CMOS Microcontroller • 2K X 8 ROM • Very Low Power Consumption • 64 X 8 RAM • Normal: 1.0 mA @ 5V @ 8 ju.s Cycle • 31 I/O Lines • Halt: 0.4 mA @ 5V @ 8 jus Cycle • 2.66 jus Cycle Time

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

TCA 321

Abstract: TCA 345 CRC-32 G781 GR-253-CORE PM5352 30f-310 TETRA terminal
Contextual Info: PM5352 S/UNI STAR DATA SHEET PMC-1990421 ISSUE 2 SATURN USER NETWORK INTERFACE 155 STAR PM5352 S/UNI-STAR SATURN USER NETWORK INTERFACE (STAR) DATA SHEET ISSUE 2: FEBRUARY 2000 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

J32C

Abstract: 0035L E-1330 E1330 j32-C sed1330
Contextual Info: 4.0 - 4.1 4.0 Specifications 4.0 Specifications 4.1 Absolute Maximum Ratings 4.1.1 SED1330 Symbol Rating Unit Supply voltage range Parameter VDD -0 .3 to 7.0 V Input voltage range VlN -0 .5 to VDD + 0.5 V Power dissipation Pd 300 mW Operating temperature range

10 16s capacitor smd

Abstract: 226 smd capacitor RSM 2322 2222 632 series capacitor MOV 103 M 3 KV 336 smd CAPACITOR 2312 344 7 SMD resistor 474 2222 631 series capacitor SMD electrolytic capacitor
Contextual Info: Information New products and highlights i Ceramic capacitors Information Page Multilayer ceramic capacitors, NP0 10 V - 4000 V Multilayer ceramic capacitors, X7R 10 V - 2000 V Multilayer ceramic capacitors, Y5V 10 V - 250 V General purpose, high voltage capacitors 1000 V to 3000 V X7R and Y5V

YS18A

Abstract: MSC2305-10YS18A MSC2305
Contextual Info: OKI semiconductor MSC2305YS18A_ 524,288 BY 9 BIT DYNAMIC RAM MODULE < Page Mode Type > GENERAL DESCRIPTION The Oki MSC2305YS18A is a fully decoded, 524,288 words x 9 bit NMOS dynamic random access memory composed of eighteen 256K DRAMs in plastic leaded chip carrier MSM41256AJS .

Contextual Info: June 1991 Edition 4.0 FUJITSU DATA SHEET M B 8 1 C 1 0 0 1 A - 6 0 /- 7 0 /- 8 0 / - 1 0 CMOS 1M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 1,048,576 X 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001AisaCMC>S, fully decoded dynamic RAM organized as 1,048,576 words

NAT9914 application code

Abstract: NAT9914 TMS9914 TCA 420 scpi parser 9914 GPIB BO 336 NEC uPD7210 NAT9914 application note NAT9914A
Contextual Info: NAT9914 TM Reference Manual June 1995 Edition Part Number 320775-01 Copyright 1994, 1995 National Instruments Corporation. All Rights Reserved. National Instruments Corporate Headquarters 6504 Bridge Point Parkway Austin, TX 78730-5039 512 794-0100 Technical support fax: (800) 328-2203

Contextual Info: cP June 1991 Edition 3.0 = FUJITSU DATA SHEET M B 8 1 C W O O A -70U -80U -10L CMOS 1M x 1 BIT FAST PAGE LOW POWER DRAM The Fujitsu M B81C1000A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1000A has been designed fo r mainframe

555 timer

Abstract: 555 timer 38 khz HMCS43 ARM13 tca 311 555 timer datasheet HMCS400 555 TIMER APPLICATIONS ADE-502-063 09 67 025 9062
Contextual Info: HMCS400 Series Application Note ADE-502-063 Alternate Order Number Marcom Rev. 1.0 9/16/98 Hitachi Ltd. Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the

NEC uPD7210

Abstract: TMS9914 NAT7210APD 9914 mode NAT7210 IC 75162 scpi parser NAT9914 application note NAT7210a
Contextual Info: NAT7210 TM Reference Manual June 1995 Edition Part Number 320744B-01 Copyright 1994, 1995 National Instruments Corporation. All Rights Reserved. National Instruments Corporate Headquarters 6504 Bridge Point Parkway Austin, TX 78730-5039 512 794-0100 Technical support fax: (800) 328-2203

Contextual Info: F4164 65,536 x 1 Dynamic RAM M O S Memory Products Logic Symbol Description The F4164 is a dynamic Random A c c e s s Memory RAM circuit organized as 65,536 single-bit words. This memory uses the Fairchild advanced double poly NM OS, Isoplanar-H p ro c e ss which allow s

LE347

Abstract: toba Q 0265 R HS 8180 42S18180
Contextual Info: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N

Contextual Info: MEMORY CMOS 256 K x 16 BITS HYPER PAGE MODE DYNAMIC RAM MB81V4265S-60/-70/-60L/-70 L CMOS 262,144 x 16 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V4265S is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 16-bit increments. The MB81V4265S features the “hyper page” mode of operation which

PTI 30 040 pa

Abstract: PMC - NE 8 D
Contextual Info: PM5351 S/UNI TETRA S/UNI-TETRA DATASHEET SATURN USER NETWORK INTERFACE 155 TETRA AM ISSUE 8 :3 1: 38 PMC-1971240 r, be S/UN I 20 06 01 PM5351 ov em 155 TETRA W ed ne sd ay ,1 5N S/UNI 155 TETRA DATA SHEET de d by C on te n tT ea m of Pa rtm in er In co

d802 P nec

Abstract: D42S17805LG5-A60 358 ez 802 D42S17805LG5 d802 q nec ELF AMPLIFIER
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT =_/ /zPD42S17805L, 4217805L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE D e s c rip tio n The /iP D 42S 17805L, 4217805L are 2,097,152 words by 8 bits CMOS dynam ic RAMs with optional hyper page