TC58NYG2S0HBAI4 Search Results
TC58NYG2S0HBAI4 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TC58NYG2S0HBAI4 | Toshiba Memory America | Integrated Circuits (ICs) - Memory - 4GB SLC NAND 24NM BGA 9X11 1.8V | Original | 497.97KB |
TC58NYG2S0HBAI4 Price and Stock
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KIOXIA TC58NYG2S0HBAI4IC FLASH 4GBIT PARALLEL 63TFBGA |
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TC58NYG2S0HBAI4 | Tray | 100 | 1 |
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TC58NYG2S0HBAI4 | 125 |
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TC58NYG2S0HBAI4 | 31,291 |
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Toshiba America Electronic Components TC58NYG2S0HBAI44GB SLC NAND 24NM BGA 9X11 1.8V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TC58NYG2S0HBAI4 | 27,791 |
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TC58NYG2S0HBAI4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TC58NYG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. |
Original |
TC58NYG2S0HBAI4 TC58NYG2S0HBAI4 2048blocks. 4352-byte 2013-07-05C |