TC58NVM9S3EBAI4 Search Results
TC58NVM9S3EBAI4 Price and Stock
Toshiba America Electronic Components
Toshiba America Electronic Components TC58NVM9S3EBAI4JAH512M BIT (64M X 8 BIT) CMOS NAND E2PROM EEPROM, 64MX8, 25ns, Parallel, CMOS, PBGA63 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TC58NVM9S3EBAI4JAH | 630 |
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TC58NVM9S3EBAI4 Datasheets Context Search
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Contextual Info: TC58NVM9S3EBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks. |
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TC58NVM9S3EBAI6 TC58NVM9S3E 512Mbit 128bits) 512blocks. 2112-byte 012-08-01A |