TC58NVG2S0HBAI6 Search Results
TC58NVG2S0HBAI6 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TC58NVG2S0HBAI6 | Toshiba Memory America | Integrated Circuits (ICs) - Memory - IC FLASH 4G PARALLEL 67VFBGA | Original | 538.86KB |
TC58NVG2S0HBAI6 Price and Stock
KIOXIA
KIOXIA TC58NVG2S0HBAI6IC FLASH 4GBIT PARALLEL 67VFBGA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TC58NVG2S0HBAI6 | Tray | 338 | 1 |
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TC58NVG2S0HBAI6 | 1,140 |
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TC58NVG2S0HBAI6 | 35,700 |
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TC58NVG2S0HBAI6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TC58NVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0HBAI6 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. |
Original |
TC58NVG2S0HBAI6 TC58NVG2S0HBAI6 2048blocks. 4352-byte 2013-07-05C |