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    TC58BYG1S3HBAI6 Search Results

    TC58BYG1S3HBAI6 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TC58BYG1S3HBAI6
    		Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 2G PARALLEL 67VFBGA Original PDF 708.62KB
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    TC58BYG1S3HBAI6 Price and Stock

    KIOXIA

    KIOXIA TC58BYG1S3HBAI6

    IC FLASH 2GBIT PARALLEL 67VFBGA
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    TC58BYG1S3HBAI6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TC58BYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG1S3HBAI6 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		TC58BYG1S3HBAI6 TC58BYG1S3HBAI6 2048blocks. 2112-byte 2112-bytes 2013-01-31C PDF