Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TC58BYG1S3HBAI6 Search Results

    TC58BYG1S3HBAI6 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TC58BYG1S3HBAI6
    		Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 2G PARALLEL 67VFBGA Original PDF 708.62KB
    SF Impression Pixel

    TC58BYG1S3HBAI6 Price and Stock

    KIOXIA

    KIOXIA TC58BYG1S3HBAI6

    IC FLASH 2GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58BYG1S3HBAI6 Tray
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Avnet Americas TC58BYG1S3HBAI6 Tray 14 Weeks 338
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.82
    • 10000 $2.53
    		Buy Now
    Mouser Electronics TC58BYG1S3HBAI6
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    TC58BYG1S3HBAI6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TC58BYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG1S3HBAI6 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		TC58BYG1S3HBAI6 TC58BYG1S3HBAI6 2048blocks. 2112-byte 2112-bytes 2013-01-31C PDF