TC58BVG1S3HTAI0 Search Results
TC58BVG1S3HTAI0 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TC58BVG1S3HTAI0 | Toshiba Memory America | Integrated Circuits (ICs) - Memory - IC FLASH 2G PARALLEL 48TSOP I | Original | 699.95KB |
TC58BVG1S3HTAI0 Price and Stock
KIOXIA TC58BVG1S3HTAI0IC FLASH 2GBIT PARALLEL 48TSOP I |
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TC58BVG1S3HTAI0 | Tray | 58 | 1 |
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TC58BVG1S3HTAI0 | 75 |
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TC58BVG1S3HTAI0 | 2,400 | 12 Weeks | 480 |
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TC58BVG1S3HTAI0 | 28,100 |
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Toshiba America Electronic Components TC58BVG1S3HTAI0 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TC58BVG1S3HTAI0 | 1 |
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TC58BVG1S3HTAI0 | 1 |
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TC58BVG1S3HTAI0 | 60,000 |
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TC58BVG1S3HTAI0 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2/13/2014 TC58BVG1S3HTAI0 | Products | TOSHIBA Semiconductor & Storage Products Company TC58BVG1S3HTAI0 BENAND Built-in ECC SLCNAND Description Properties Inquiries on our product Description Capacity (bit) 2G Tech. node (nm) 24 Page size (bit) (2048+64)x8 |
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TC58BVG1S3HTAI0 TC58BVG1S3HTAI0 | |
Contextual Info: TC58BVG1S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG1S3HTAI0 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. |
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TC58BVG1S3HTAI0 TC58BVG1S3HTAI0 2048blocks. 2112-byte 2112-bytes 2013-01-31C |