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    TC260 Search Results

    TC260 Datasheets (40)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TC260
    Toshiba SLI ASIC Family with Embedded DRAM 0.14um/1.5V Original PDF 51.1KB 2
    TC-26.000MBD-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 26.000MHZ CMOS SMD Original PDF 1
    TC-26.000MBE-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 26.000MHZ CMOS SMD Original PDF 1
    TC-26.000MCD-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 26.000MHZ CMOS SMD Original PDF 1
    TC-26.000MCE-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 26.000MHZ CMOS SMD Original PDF 1
    TC-26.000MDD-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 26.000MHZ CMOS SMD Original PDF 1
    TC-26.000MDE-T
    TXC Oscillators, Crystals and Oscillators, OSC MEMS 26.000MHZ CMOS SMD Original PDF 1
    TC2600H
    Lite-On Technology Rated repetitive off-state voltage:220 ,surface mount thyristor surge protective device Original PDF 47.19KB 4
    TC260-BGA256
    Toshiba 0.14 um CMOS ASIC TC260 Original PDF 991.65KB 4
    TC260-BGA265
    Toshiba SLI ASIC Family with Embedded DRAM 0.14um/1.5V Original PDF 51.13KB 2
    TC260-BGA352
    Toshiba 0.14 um CMOS ASIC TC260 Original PDF 991.65KB 4
    TC260-BGA576
    Toshiba 0.14 um CMOS ASIC TC260 Original PDF 991.65KB 4
    TC260-BGA768
    Toshiba 0.14 um CMOS ASIC TC260 Original PDF 991.65KB 4
    TC260-BGA800
    Toshiba 0.14 um CMOS ASIC TC260 Original PDF 991.65KB 4
    TC260C
    Toshiba ASIC with Embedded DRAM Original PDF 453.57KB 4
    TC260C-EPBGA
    Toshiba SLI ASIC Family with Embedded DRAM 0.14um/1.5V Original PDF 44.35KB 2
    TC260C-FCBGA
    Toshiba SLI ASIC Family with Embedded DRAM 0.14um/1.5V Original PDF 44.35KB 2
    TC260C-TBGA
    Toshiba SLI ASIC Family with Embedded DRAM 0.14um/1.5V Original PDF 44.35KB 2
    TC260DC-EPBGA
    Toshiba SLI ASIC Family with Embedded DRAM 0.14um/1.5V Original PDF 44.35KB 2
    TC260DC-FCBGA
    Toshiba SLI ASIC Family with Embedded DRAM 0.14um/1.5V Original PDF 44.35KB 2
    SF Impression Pixel

    TC260 Price and Stock

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    Endress+Hauser Management AG FTC260-AA4D1

    Sensor: level; R1; 20÷55VDC; IP66; bulk solids; FTC260; 20÷253VAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME FTC260-AA4D1 1 1
    • 1 $307.69
    • 10 $307.69
    • 100 $307.69
    • 1000 $307.69
    • 10000 $307.69
    Buy Now

    Endress+Hauser Management AG FTC260-AA2D1

    Sensor: level; R1; 10.8÷45VDC; IP66; bulk solids; FTC260; max.25bar
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME FTC260-AA2D1 1 1
    • 1 $272.74
    • 10 $272.74
    • 100 $272.74
    • 1000 $272.74
    • 10000 $272.74
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    Lamina Semiconductors International Inc MTC-260-16

    Module: thyristor; double series; 1.6kV; 260A; Ifmax: 408A; 52MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME MTC-260-16 1 1
    • 1 $138.40
    • 10 $98.98
    • 100 $98.98
    • 1000 $98.98
    • 10000 $98.98
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    Analog Devices Inc LTC2602CMS8#PBF

    IC: D/A converter; 16bit; Ch: 2; 2.5÷5.5V; MSOP8; 0÷70°C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME LTC2602CMS8#PBF 1
    • 1 $12.20
    • 10 $9.72
    • 100 $8.73
    • 1000 $8.73
    • 10000 $8.73
    Get Quote
    Newark LTC2602CMS8#PBF Bulk 166 1
    • 1 $18.52
    • 10 $14.70
    • 100 $12.70
    • 1000 $12.20
    • 10000 $12.20
    Buy Now

    Endress+Hauser Management AG FTC260-AA4D2

    Sensor: level; R1; 20÷55VDC; IP66; bulk solids; FTC260; 20÷253VAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME FTC260-AA4D2 1
    • 1 $317.49
    • 10 $317.49
    • 100 $317.49
    • 1000 $317.49
    • 10000 $317.49
    Get Quote
    RS FTC260-AA4D2 Bulk 1 3 Weeks 1
    • 1 $256.62
    • 10 $256.62
    • 100 $256.62
    • 1000 $256.62
    • 10000 $256.62
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    TC260 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    8B10B ansi encoder

    Abstract: TC260 TOSHIBA standard cell library
    Contextual Info: TC260 SD10 1.6/3.2Gb/s Dual Mode SerDes Macros The TC260 SD10 macros enable building high speed interfaces — while consuming a limited number of pins — between integrated circuits ICs implemented in standard cell or as embedded array in Toshiba’s TC260


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    tc26010gigaethernet8b10b ansi encodertc260 toshiba standard cell library PDF

    "embedded dram"

    Abstract: types of transistors CMOS GATE ARRAYs toshiba 1 gate toshiba logic TC240 TC260C 0.25um TOSHIBA standard cell library TOSHIBA Logic
    Contextual Info: 0.14 m CMOS ASIC TC260 Family PRODUCT GUIDE SLI ASIC for High-Function, Low-Power Applications TC260 Family The TC260 family of System-Level Integration SLI ASICs are designed for applications needing the highest performance with the smallest die size and lowest power.


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    tc260tc260ctc260eembedded dram+6types of transistorscmos gate arrays toshiba1 gate toshiba logictc2400.25um toshiba standard cell librarytoshiba logic PDF

    TOSHIBA TC260

    Abstract: TC260 TOSHIBA standard cell library CMOS GATE ARRAYs toshiba TC260 1 gate toshiba logic asic flow
    Contextual Info: TOSHIBA TC260 SLI ASIC Family with Embedded DRAM 0.14µm/1.5V Description The TC260 family of System-Level Integration SLI ASICs are designed for applications needing the highest performance with the smallest die size. The TC260 employs the highest-density interconnects,


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    tc260tc260c/dctc260e/de150mhz+5toshiba tc260tc260 toshiba standard cell librarycmos gate arrays toshiba1 gate toshiba logicasic flow PDF

    DRAM "deep trench" capacitor

    Abstract: IC 64256 RAM embedded dram timing TC260 TOSHIBA standard cell library TC260 TOSHIBA GATE ARRAY 1 gate toshiba logic 64256
    Contextual Info: TOSHIBA TC260 SLI ASIC Family with Embedded DRAM 0.14µm/1.5V Description The TC260 family of System-Level Integration SLI ASICs are designed for applications needing the highest performance with the smallest die size. The TC260 employs the highest-density interconnects,


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    tc260tc260c/dctc260e/de150mhz+7dram "deep trench" capacitoric 64256 ramembedded dram timingtc260 toshiba standard cell librarytoshiba gate array1 gate toshiba logic64256 PDF

    TC260C

    Abstract: TC260 TOSHIBA standard cell library TC240 TC240C PCI 16f IEEE1284 TC260 TC260E types of transistors 1 gate toshiba logic
    Contextual Info: 0.14 m CMOS ASIC TC260 Family PRODUCT GUIDE SLI ASIC for High-Function, Low-Power Applications TC260 Family The TC260 family of System-Level Integration SLI ASICs are designed for applications needing the highest performance with the smallest die size and lowest power.


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    tc260tc260ctc260etc260 toshiba standard cell library+6tc240tc240cpci 16fieee1284types of transistors1 gate toshiba logic PDF

    TC260 TOSHIBA standard cell library

    Contextual Info: TC260 SD11 1.25/2.5Gb/s Dual Mode SerDes Macros The TC260 SD11 macros enable building high speed interfaces — while consuming a limited number of pins — between integrated circuits ICs implemented in standard cell or as embedded array in Toshiba’s TC260


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    tc26025gb/stc260 toshiba standard cell library PDF

    Celaro

    Abstract: TC240 green hills compiler fastscan G7M datasheet tc160 TC140 TC200 TC260 TC280
    Contextual Info: 2006-2 製品カタログ SoC System on a Chip EDA 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した 新 潟 電 子デバイス 営 業 担 当 (025)246-8250 長野電子デバイス営業部 (0263)35-6642


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    bcj0011dbcj0011ccelarotc240+8green hills compilerfastscang7m datasheettc160tc140tc200tc260tc280 PDF

    Dolby prologic

    Abstract: TC9446F-003 ieee1284 usb IEEE1284 TC240 TC260 TC260C TC260E 576-TBGA dolby DTS
    Contextual Info: 東芝半導体情報誌アイ 1999 9月号 発行/(株)東芝 セミコンダクター社 電子デバイス営業事業部 営業企画部 TEL. 03-3457-3453 FAX. 03-5444-9431 c mi Se CONTENTS INFORMATION エレクトロニクスショー’ 99に出展


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    jp/semicon/virtual99/eyeindexold9462mc/mdiop30ma55ma30ma+1365mips24bit24bit51bit51bitaludolby prologictc9446f-003ieee1284 usbieee1284tc240tc260tc260ctc260e576-tbgadolby dts PDF

    TC280

    Abstract: TC300C TC190G SCJ0004N TC200 TC280C TC190 tc223g TC203G/E
    Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ASIC CMOS ゲートアレイシリーズ CMOS セルベース IC シリーズ CMOS エンベデッドアレイシリーズ 1 2009/7 SCJ0004N 「新製品にどんな特長や機能をもたせるか」そして 「いかにスピーディに商品価値の高い製品を開発できるか」 ということがマーケットでの競争力を決定


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    scj0004ntc320casictc320tc320+8tc300ctc280tc190gtc200tc280ctc190tc223gtc203g/e PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


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    sce0001cs-167sce0001dtoshiba tmpa8873+9ta1343ngtmpa8891tmpa8893tmpa8873tmpa8859tc90a96bfgtb1318fgtmpa8857tmpa8853 PDF

    TX39

    Abstract: C 4927 TX49 fpu coprocessor TX39-CPU toshiba trace code
    Contextual Info: TOSHIBA TX39™/TX49™ RISCASIC Cores 32/64-bit MIPS FPU Inst. C ac h e Data C ac h e D S U A PU W BU DMAC G- bus H i gh sp e e d P e r i phe r a l s T X . . C or e M e m or y U se r L ogic I M - Bus Br i dg e TLB G -Bus I nt er f ac e T X C PU U A RT


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    tx39tm/tx49tm32/64-bittx39c 4927+4tx49fpu coprocessortx39-cputoshiba trace code PDF

    "embedded dram" and Graphics and Toshiba

    Abstract: DRAM 4114 dram verilog model "embedded dram" dram structure embedded dram timing TC240D piano vhdl TOSHIBA Logic
    Contextual Info: Embedded DRAM Cores SLI ASICs with Embedded DRAM for High-Performance, High-Density and Low-Power Applications The ever-increasing ASIC complexity and the drive for systemlevel integration SLI demand the capability to integrate memory blocks, IP cores and random logic on a single chip. We see


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    embedded dram" and graphics and toshibadram 4114dram verilog modelembedded dram+5dram structureembedded dram timingtc240dpiano vhdltoshiba logic PDF

    GR-1089-CORE

    Abstract: TC0640H TC0720H TC0900H TC1100H TC1300H TC3500H
    Contextual Info: LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @


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    tc0640htc3500h10/1000us8/20us+703-dec-2001kswc02gr-1089-coretc0720htc0900htc1100htc1300h PDF

    TC320C

    Abstract: TC260C TC280 SCJ0004R TC200 TC280C TC300C tc190
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ASIC CMOS ゲートアレイシリーズ CMOS セルベース IC シリーズ CMOS エンベデッドアレイシリーズ 1 2011/1 SCJ0004R 「新製品にどんな特長や機能をもたせるか」そして 「いかにスピーディに商品価値の高い製品を開発できるか」 ということがマーケットでの競争力を決定


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    scj0004rtc320casictc320tc320+6tc300ctc260ctc280tc200tc280ctc190 PDF

    0.18-um CMOS technology characteristics

    Abstract: TC190G ASIC-TC223 toshiba TC200 tc190c toshiba Single Gates logic CMOS GATE ARRAYs toshiba TC300C 130 nm CMOS standard cell library Toshiba TC200
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG ASICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 1 2010/9 SCE0004K To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and


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    2010/9sce0004k0.18-um cmos technology characteristicstc190gasic-tc223+7toshiba tc200tc190ctoshiba single gates logiccmos gate arrays toshibatc300c130 nm cmos standard cell library toshibatc200 PDF

    TC0640H

    Abstract: TC0720H TC0900H TC1100H TC1500H TC2300H TC2600H TC3100H TC3500H
    Contextual Info: Thyristor Surge Protective Device Surface Mount TSPD Part Number OffOnRated State State Repetitive Leakage Breakover Voltage Off-State Current Voltage d Voltage I f lA @ VDRM Nonrepetitive Peak impulse current ^ Nonrepetitive peak On-state Breakover current


    OCR Scan
    10/1000ustc0640htc0720htc0900h+8tc1100htc13ddhtc1500htc18dreakovertc2300htc2600htc3100htc3500h PDF

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Contextual Info: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


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    p12p13p17p18p19p22scj0001d+11scj0001cta1343ngtb1318fgpal 011 a speaker output ictc90a96bfgtmpa8859toshiba tmpa8873tmpa8893tmpa8873tmpa8891gt30f122 PDF

    ARM1136J-S

    Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
    Contextual Info: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific


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    bce0032as-167bce0032barm1136j-s+9eldectoshiba tc160arm1136jtoshiba cmos image 1995tc190ccmos gate arrays toshibatc190gtc280celaro PDF

    TC190G

    Abstract: TC280C TC300C STD1149 tc190c TC260C SCJ0004O TC200 TC280 TC203
    Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 ASIC CMOS ゲートアレイシリーズ CMOS セルベース IC シリーズ CMOS エンベデッドアレイシリーズ 1 2010/1 SCJ0004O 「新製品にどんな特長や機能をもたせるか」そして 「いかにスピーディに商品価値の高い製品を開発できるか」 ということがマーケットでの競争力を決定


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    scj0004otc320casictc320tc320+9tc300ctc190gtc280cstd1149tc190ctc260ctc200tc280tc203 PDF

    TOSHIBA TC160

    Abstract: 0.18-um CMOS technology characteristics TOSHIBA TC170 ASIC-TC223 TC280C TC200 TC220C TC220E TC280 TC190G
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG ASICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 1 2009-8 SCE0004I To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and


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    sce0004itoshiba tc1600.18-um cmos technology characteristicstoshiba tc170+7asic-tc223tc280ctc200tc220ctc220etc280tc190g PDF

    No Turnaround RAM

    Abstract: TC35273XB TLGU1020 TLGV1020 TLOU1020 TLOV1020 TLPGV1020 TLSU1020 TLSV1020 TLYU1020
    Contextual Info: 東芝半導体情報誌 アイ 3 2001・3月号 発 行 /( 株 )東 芝セミコンダクター社 電 子デバイス営 業 事 業 部 営 業 企 画 部 T E L . 0 3-3 4 5 7-3 4 0 5 F AX. 0 3-5 4 4 4-9 4 3 1 C O N T E Vol.104 N T S 今月の新製品情報


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    11masictlxv1020/tlxu1020tlxv1020tlxu1020+11tlsv1020tlov1020tlyv1020tlgv1020no turnaround ramtc35273xbtlgu1020tlou1020tlpgv1020tlsu1020tlyu1020 PDF

    MeP-c4

    Abstract: mep toshiba Toshiba MeP P168 ILR03 MEP core
    Contextual Info: ユーザーズマニュアル MeP コア MeP-c4 ユーザーズマニュアル (アーキテクチャ編) MeP コア(MeP-c4) ユーザーズマニュアル (アーキテクチャ編) セミコンダクター社 MeP コア(MeP-c4) ユーザーズマニュアル(アーキテクチャ編)


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    mepum05005-j27ilr03mep-c4mep toshiba+3toshiba mepp168mep core PDF

    P041M-1S

    Abstract: pd416 PD4168 AOAE p041m S200N
    Contextual Info: NEC fiPD4168 8,192 X 8-BIT NMOS XRAM NEC Electronics Inc Revision 1 Description Pin Configuration The NEC^PD4168 is an 8,192 word by 8-bit NMOS XRAM designed to operate from a single +5V power supply. The NEC *<PD4168 is termed an XRAM because it Incor­ porates some of the best features of both SRAMs Nonmultiplexed addresses, simple interface requirements


    OCR Scan
    upd4168pd4168mpd4168p041m-1s+4pd416aoaep041ms200n PDF

    TDA 3612

    Abstract: MEP core npc 716 MEPUM02001-J17 Toshiba MeP 001227DAA1 "saturation instruction" "saturation" "instruction" SIE22 mep c-3
    Contextual Info: ユーザーズマニュアル MeP コア MeP-c2 ユーザーズマニュアル (アーキテクチャ編) MeP コア(MeP-c2) ユーザーズマニュアル (アーキテクチャ編) セミコンダクター社 MeP コア(MeP-c2) ユーザーズマニュアル(アーキテクチャ編)


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    001227daa1mepum02001-j17tda 3612mep core+6npc 716toshiba mepsaturation instructionsaturation" "instructionsie22mep c-3 PDF