TC-6 6 AMP INDUCTIVE LOAD Search Results

Contextual Info: SOA AND LOAD LINES APPLICATION NOTE 22 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX 1.0 MEANING OF SOA GRAPH (800) 546-2739 +50 SOA (Safe-Operating-Area) graphs define the acceptable limits of stresses to which power op amps can be subjected. Figure 1 depicts

mosfet SOA testing

Abstract: AD534 PA04 PA05 PA12 PA85 soa tester
Contextual Info: SOA AND LOAD LINES APPLICATION NOTE 22 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX 1.0 MEANING OF SOA GRAPH +50 SOA (Safe-Operating-Area) graphs define the acceptable limits of stresses to which power op amps can be subjected. Figure 1 depicts

Contextual Info: L 10 auct i, One. C^ TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE13009 SWITCHMODE Series NPN Silicon Power Transistors Features • VCEO(S11S) 400 V and 300 V • Reverse Bias SOA with Inductive Loads @ Tc = 100°C

Contextual Info: Teccor brand Thyristors 12 Amp Alternistor High Communitation Triac for LED dimmer Application Q6012LH1LED Series RoHS ® Description Q6012LH1LED series is designed to meet low load current characteristics typical in LED lighting applications. By keeping holding current at 8mA maximum, this Triac

S8016N

Abstract: S2055N S4016N s8025 35 amp scr s60 S4025 S2055N equivalent S1025N S2016N S2025N
Contextual Info: D 2 Pak MT2 MT1 G 2 D Pak SCR 16 – 55 Amps 6 General Description The Teccor Electronics line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with

teccor triac application notes

Abstract: Q6012LH1 Q6012 alternistors Alternistor motor speed M1056 ac motor control with triac Q6012lh1led Triac Heat Sink assembly
Contextual Info: Teccor brand Thyristors 12 Amp Alternistor High Communitation Triac for LED dimmer Application Q6012LH1LED Series RoHS Description Q6012LH1LED series is designed to meet low load current characteristics typical in LED lighting applications. By keeping holding current at 8mA maximum, this Triac

S1055M

Abstract: SCR S1055m S0565J S6025L s6015l S2055 s1065k S101E S6010L S1035K
Contextual Info: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more

S6025

Abstract: S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020
Contextual Info: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more

Q7004L4

Abstract: Q2004L3 Q4015L5 Q7006L5 Q7010L5 Q4004L3 applications Q4004L3 Q5010L5 Q5025R5 q6004l3
Contextual Info: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U THERMOTAB TO-220AB TO - 92 MT2 TO-202AB MT1 G Triacs 0.8 – 25 Amps 2 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult factory for more

mje13003 equivalent

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

2N2222 transistor output curve

Abstract: UTCMJE13003 MJE13003 transistor
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

mje13003

Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

equivalent transistor 2N2905

Abstract: UTCMJE13003 MJE13003 TO-92 mje13003 equivalent tti relay Ferroxcube core
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

Q6040P

Abstract: Q8025L6 Q4025J6 q8012LH5 alternistor Q4025L6 Q4025P Q6025 Q8040J7 Q2015L6
Contextual Info: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-220AB THERMOTAB TO-218AC FASTPAK MT2 TO-218X MT1 G Alternistor Triacs 6 – 40 Amps 4 General Description handling capability. The TO-218X features large eyelet terminals for ease of soldering heavy gauge hook-up wire. All the isolated

MT2 Q4025P

Abstract: Triac MT2 Q6025P Q5016RH4 Q8040P 20 amp 800 volt triac 6 amp 600 volt triac 4 amp 250 volt triac q8016rh4 q8025l6 Gate Turn-off Thyristor
Contextual Info: Thyristor Product Catalog L. U. D ZE NI 4 G 39 CO 716 E R #E d te ec l Se P * es ag k ac le Fi TO-220AB THERMOTAB TO-218AC TO-218X MT2 FASTPAK MT1 G Alternistor Triacs 6 – 40 Amps 4 General Description Teccor offers bidirectional alternistors with current ratings from

Contextual Info: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER RANSISTORS The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching

e13009

Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

mje13009 equivalent

Abstract: 2N2222 transistor output curve 2N2222 transistor to drive a relay on semiconductor AN719
Contextual Info: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

JE1300

Abstract: JE13005 mje130
Contextual Info: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA M JE13005* D esigner’s Data Sheet ‘ M otorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs These de vices are de sig ne d fo r h ig h -v o lta g e , h ig h -s p e e d pow er sw itching

MJ10007

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007’ Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode •Motorola Pr«f*rr«d Otvlet 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS