TC 971 Search Results

STT800

Contextual Info: STT800GKXXPT Thyristor-Thyristor Modules Type Symbol ITAV ITRMS ITSM 2 I t VDRM, VRRM VDSM, VRSM Test Conditions Maximum Ratings Unit TC=85oC; 180o half sine wave,50HZ TC=85oC; 180 o Full cycle sine wave,50HZ TVJ=TVJM 180o half sine wave,50HZ single pulse;

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

IRFI840G

Abstract: Ultra Low VF GE S 2646 IRGI4060DPBF
Contextual Info: PD - 97153 IRGI4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • IC = 7.5A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA

IRFI840G

Contextual Info: PD - 97114A IRGI4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • IC = 11A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA

TDMA

Abstract: mobile rf power amplifier IS-136 TQ7125
Contextual Info: Advance Product Information Preliminary: Subject to change without notice WIRELESS COMMUNICATIONS DIVISION 3V HBT TDMA Power Amplifier IC TQ7125 Selected Electrical Characteristics Test Conditions: VCC = +3.5 V, TC = 25°C, Vbias=2.75V Max. Units Primary Application s

IS-136

Abstract: TQ7625
Contextual Info: Advance Product Information Preliminary: Subject to change without notice WIRELESS COMMUNICATIONS DIVISION 3V HBT TDMA Power Amplifier IC TQ7625 Selected Electrical Characteristics Test Conditions: VCC = +3.5 V, TC = 25°C, VBIAS=2.75V Parameter Min. Usable Frequency Range

IRf 48 MOSFET

Abstract: IRFH5302TRPBF IRFH5302TR2PBF PQFN footprint AN-1154 IRFH5302TR
Contextual Info: PD -97156 IRFH5302PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 2.1 mΩ 29 1.6 nC Ω 100 (@Tc(Bottom) = 25°C) h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters

Contextual Info: PD -97156 IRFH5302PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 2.1 mΩ 29 1.6 nC Ω 100 (@Tc(Bottom) = 25°C) h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters

STT500GK18

Abstract: stt500gk16 STT500 IG1A STT500GK08 STT500GK12 STT500GK14 Al2O3 STT500GK
Contextual Info: STT500 Thyristor-Thyristor Modules Dimensions in mm 1mm=0.0394" Type STT500GK08 STT500GK12 STT500GK14 STT500GK16 STT500GK18 Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200

Contextual Info: STT500GKXX%T Thyristor-Thyristor Modules Dimensions in mm 1mm=0.0394" STT500GK08%T STT500GK12%T STT500GK14%T STT500GK16%T STT500GK18%T Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine t=10ms (50Hz), sine

5pgm

Contextual Info: WESTCODE SEMICONDUCTORS Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 di/dt cr (dv/dt)cr

NEZ4450-15D

Abstract: NEZ4450-4D NEZ4450-4DL NEZ4450-8D
Contextual Info: NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -XDL Option Only IDSS VP BVDGO gm RTH (CH-C ∆T (CH-C)

2N1047

Abstract: 2N1047B 2N1050B 1049B 2N1050 2n1050a 10S0B 250PA120 2N1049 lc 5012 m
Contextual Info: TYPES 2N1047 THRU 2N1050 2N1047A THRU2N1050A, 2N1047B THRU 2N1050B N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS Sr 3m m vi FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS Z at V CE = 40 V, Tc = O 9 5 • Dissipation Capability in excess of 22 W

499G

Abstract: NEZ4450-15D NEZ4450-4D NEZ4450-4DL NEZ4450-8D
Contextual Info: NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -XDL Option Only IDSS VP BVDGO gm RTH (CH-C ∆T (CH-C)

concept 2101S

Abstract: design of 18 x 16 barrel shifter in computer arch radix-2 dit fft flow chart jqc -3f MOC 3803 led display 16x32 Non-Linear Circuits Handbook Analog Devices mxo 841 nonlinear circuits handbook radix delta ap
Contextual Info: CES LABORATORY FUTURE ELECTRONICS INC. 5935 Airport Road, Suite 200 Mississauga, Ontario L4V1W5 TEL.: 905 612-9200 FAX: (905) 612-9185 TOLL FREE 1-800-268-7948 USING THE ADSP-2101 MICROCOMPUTER M&NUNCONTROLS a0cK INPUT c o o tc M 4 M -0 6 OU TP^ boot NIENIOW

000A2s

Abstract: 22516
Contextual Info: WESTCODE SEMICONDUCTORS Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 di/dt cr (dv/dt)cr 3 Type WPT 225-12

IXYS MCC 550

Abstract: 170-16io1 mcc 550 ixys
Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 170 ITRMS = 2 x 350 A MCD 170 ITAVM = 2 x 203 A VRRM = 1200 - 1800 V VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM

Bosch 8.0 abs diagram

Abstract: Solenoid control switch Bosch ABS BOSCH ABS 8.1 Bosch abs Bosch 5.4 abs diagram BOSCH "ESP 8.1" bosch 5.3 abs Bosch 5.4 abs valve Bosch 5.3 abs valve Bosch 5.4 abs
Contextual Info: AN2804 Application note Virtual current control loop for L9374-L9375 coil driver kit in ABS-ESC control unit Introduction In the conventional hydraulic modulator for ABS-ESC control units, the 6 inlet valves also known as ISO and/or TC-ISO valves , that is, the 4 devoted to the ABS/TCS functions and

3 phase motor soft starter circuit

Contextual Info: WESTCODE SEMICONDUCTORS VRRM = 2000 - 2200 V ITRMS = 750 A ITAV = 464 A High Power Single Thyristor Module VRSM VRRM VDSM VDRM V V 2100 2300 2000 2200 Type 3 2 2 Test Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C VR = 0 dv/dt cr

411a

Abstract: IXYs MCO
Contextual Info: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 1600-2200 V High Power Single Thyristor Module VRSM VDSM VRRM VDRM V V 1700 1900 2100 2300 1600 1800 2000 2200 3 Type MCO MCO MCO MCO 5 4 Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine Maximum Ratings ITSM

THYRISTOR MODULE MCC 25

Abstract: 2x450 DIODE bridge 255
Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 255 ITRMS = 2 x 450 A MCD 255 ITAVM = 2 x 250 A VRRM = 1200 - 1800 V VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM

IXYS MCC 550

Abstract: 225-16io1 22516I Thyristor MCD
Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 225 ITRMS = 2 x 400 A MCD 225 ITAVM = 2 x 221 A VRRM = 1200 - 1800 V VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM

Contextual Info: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 1600-2200 V High Power Single Thyristor Module VRSM VDSM VRRM VDRM V V 1700 1900 2100 2300 1600 1800 2000 2200 3 Type MCO MCO MCO MCO 5 4 Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine Maximum Ratings ITSM

ixys MDD 172 12

Abstract: motor IG 2200 19 IXYs MCO ixys mco 255 MCC132 MCC161 MCC162 MCC170 MCC72 MCC16
Contextual Info: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 2000-2200 V High Power Single Thyristor Module Preliminary data VRRM VDRM V V 2100 2300 2000 2200 3 Type 5 4 3 2 2 Test Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C VR = 0 Maximum Ratings