TC 620 Search Results

24N10

Contextual Info: AdvancedTechnical Information IXFK24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C

Contextual Info: nixYS Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFET Power MOSFETs VDSS Single MOSFET Die Maximum Ratings TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 300 300 V V Continuous Transient ±20 ±30 V V Tc Tc Tc Tc

R075

Abstract: R056 R68 resistor kf 202 transistor YAGEO TYPE CR KT 210 R30-R33 470R 680R kc series vitrohm resistors
Contextual Info: Series KC, KH, KV, KT, KF Temperature coefficient of the resistive wire for wirewound resistors P70 Type TC +400 ±50 ppm K-1 TC +0 ±40 ppm K-1 TC +0 ±10 ppm K-1 1W 200 R056 - R20 R22 - 300R 330R - 9K1 2W 202 R075 - R43 R47 - 620R 680R - 20K 4W 206 R056 - R20

YAGEO TYPE CR

Abstract: Yageo 680R Vitrohm resistors R-62
Contextual Info: Series KP Temperature coefficient of the resistive wire for wirewound resistors P70 Type TC +400 ±50 ppm K-1 TC +0 ±40 ppm K-1 TC +0 ±10 ppm K-1 2W 290 R10 - R27 R30 - 510R 560R - 7K5 4W 292 R15 - R56 R62 - 620R 680R - 11K 5W 294 R27 - R62 R68 - 1K1 1K2 - 20K

Contextual Info: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules

Contextual Info: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules

Contextual Info: SEMiX452GAR126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules

Contextual Info: SEMiX604GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 880 A Tc = 80 °C 670 A 600 A ICnom ICRM SEMiX 4s ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A Tc = 80 °C 529

Contextual Info: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 587 A Tc = 70 °C 467 A 600 A ICnom ICRM ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C 441 A Tc = 70 °C 342 A 400 A 800

Contextual Info: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 587 A Tc = 70 °C 467 A 600 A ICnom ICRM ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C 441 A Tc = 70 °C 342 A 400 A 800

Contextual Info: SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 590 A Tc = 80°C 413 A 800 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 533 A Tc = 80°C 367 A ICRM = 2xICnom VGES SEMiX 4s Trench IGBT Modules

SID200S12

Abstract: TF 620 M
Contextual Info: SID200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode

SII200S12

Abstract: IGBT 150A
Contextual Info: SII200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode

SDI200S12

Contextual Info: SDI200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode

Contextual Info: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C

Contextual Info: SEMiX452GAR126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C

Contextual Info: SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 590 A Tc = 80 °C 413 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C

discharge diode

Contextual Info: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C

Contextual Info: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C

C319A

Abstract: SEMIX452GB126HDS
Contextual Info: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C

SKM900GA12E4

Contextual Info: SKM900GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1311 A Tc = 80 °C 1007 A 900 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 2700 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SKM900GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1305 A Tc = 80 °C 1003 A 900 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 2700 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SKKT 42, SKKT 42B, SKKH 42 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules NOMP NOOP= NDOP QJOPM R SB I G1&321.1 K&0.% +- 5- '2).-.* -7%(&'2-)H N ZUU VAUU VBUU VSUU N WUU VCUU VTUU V@UU QJIN R TU I G*2)> VWUX J5 R WB YEH M[[J TC¥UW? M[[J TC]UW? M[[$ TC¥UW?

ixgk32n60

Contextual Info: ÎXYS HiPerFAST IGBT IXGH 32N60A 1XGH 32N60AS CES ^C25 v CE sat t,i Symbol Test Conditions v CES T j = 25°C to 150°C v CGR T j = 25°C to 150°C; RGE = 1 M il 600 V Continuous ±20 V V* GEM Transient ±30 V ^C25 Tc = 25°C 60 A Tc = 90°C 32 A ^CM Tc = 25“C, 1 ms