TC 494 C Search Results

Contextual Info: SEMiX501D17Fs Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 494 A Tc = 100 °C 417 A Tj = 25 °C 2740 A Tj = 150 °C 2140 A Tj = 25 °C 37538 A²s Tj = 150 °C 22898 A²s VRSM 1700 V VRRM 1700 V -40 . 150 °C -40 . 125 °C 1 min 4000

AOD472

Abstract: TRANSISTOR aoD472 Features AOD472
Contextual Info: AOD472 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD472 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

Contextual Info: X Series Data Sheet 375, 500 Watt AC-DC and DC-DC DIN-Rail Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available • Rugged 35 mm DIN-rail snap-fit design • Class I equipment • Universal AC-input with single stage conversion AC to

rm0031

Abstract: 7 SEGMENT DISPLAY LT 543 PIN CONFIGURATION CH7E ch9i bgf 119 data sheet MARKING P1F STM8l one pulse mode stm8l power consumption IO CH11M infrared receiver ch8i
Contextual Info: RM0031 Reference manual STM8L15x microcontroller family Introduction This reference manual targets application developers. It provides complete information on how to use the STM8L15x microcontroller memory and peripherals. The STM8L15x is a family of microcontrollers with different memory densities, packages

DCJK37P

Abstract: A7n 84 DEJK9P4 DEJT9S1-A190 DAJK15S DAJT3WK3S9-1AON-A190 DEJK9S4-1U7N-146
Contextual Info: Filter D D Subm iniature D*JK/D*JT ilter connectors series D*JKand D*JTfrom ITT Cannon esp ecially designed for commercial applications provide excellent protection against EMI and RFI. F Using D Subminiature standard components a cost-effective production can be achieved as well

Contextual Info: SKM 400GB125D ' 3 ,4 5#      Absolute Maximum Ratings Symbol Conditions IGBT 6#2 '7 3 ,4 5# # '7 3 4- 5# ),- 6 9- $ '  3 :- 5# *- $ - $ = ,- 6 )- A '  3 ,4 5# *B- $ '  3 :- 5# ,- $ - $ '7 3 )4- 5# ,:- $ '  3 ,4 5#

ik 937

Abstract: FLM5964-18F
Contextual Info: FLM5964-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω

2sc790

Abstract: transistor 2SC 790 c790 2SA490 AC75 jd2030 SS4490 2SC790 O
Contextual Info: 2 s c 790 o ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR n tim m m o Power Amplifier Applications 3 S A 4 9 0 £ 3 V 7 *iJ H i - F i OTL / y jt ' J T t i i ^ l O W ^ ^ ^ 7 y 7 K M '& 'Z 't o Complementary to 2SA490 10 Watts Output is Available. MAXIMUM RATINGS Ta=g5"C

TRANSISTOR cep703al

Abstract: CEP703AL ceb703al A3525 CEP703
Contextual Info: CEP703AL/CEB703AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.

MPSA4250

Contextual Info: ON Semiconductort High Voltage Transistor BF393 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 300 Vdc Collector −Base Voltage VCBO 300 Vdc Emitter −Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 500

1RF740

Abstract: IRF740 inverter SEC IRF740 IRF740 D84EQ2 F740
Contextual Info: IRF740.741 D84EQ2.Q1 F U F FIELD EFFECT POWER TRANSISTOR 10.0 AMPERES 400, 350 VOLTS ^ ^ R D S ^ O N j^ O Æ S il This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged­

BUZ171

Contextual Info: SIEMENS 10427 SIPMOS Power Transistor BUZ 171 • P channel • Enhancement mode • Avalanche rated Type BUZ 171 VDS -5 0 V Id -8 .0 A ^OS on 0.3 Q Package 1> Ordering Code TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 30 *C

Contextual Info: S P E C I F I C A T I OM DEVICE NAME : TYPE NAME : Power MOSFET 2 S K 2 4 9 4 - 0 1 SPEC. No. F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Ca^-td. DRAWN CHECKED o z o' Ï o Ki Y 0257-R-004a

Contextual Info: 2-13-2001 From: RCD COMPONENTS INC To: 7912594 0 5 /12/98 06:55 3:47pm p. 7 of 9 IS 003 RCD COMPONENTS Q00 Positive TC Sensors LS Series FEATURES DESCRIPTION □ Internationally popular D 0 3 5 size □ Low cost □ Herm etically sealed for superior RCD’s LS1/8 sensor is encapsulated in

Contextual Info: TO SH IBA TLOU160,TLSU 160,TLYU 160 TENTATIVE TO SH IBA In G a A iP LED TLOU1 6 0 , TLSU1 6 0 , TLYU160 PAN EL CIRCUIT INDICATOR • InGaAfP LED • All Plastic Mold Type • Colorless Clear Lens • Lineup : 3 Colors Red, Orange, Yellow • Suitable for High-Brightness and Less Electricity

Contextual Info: 3 C ü T m d e S G S - 7 T ^ H 2 O 3 M 7 S O 2 ^ 7 3 t N * J i n, . li]0 ^©[l[L[E©TF^ Q i0(gi_ SGSP341 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V Ds s ^D S(on) SGSP341 400 V 20 ß 0.6 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING

SSP6N60

Abstract: 250M SSP6N55 mosfet 600V 6A N-CHANNEL
Contextual Info: N-CHANNEL POWER MOSFETS SSP6N60/55 FEATURES TO-220 • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: ZNREF040 4V LOW POWER PRECISION REFERENCE SOURCE The ZNREF040 is a monolithic integrated circuit providing a precise stable reference voltage of 4.01V at 500pA The circuit features a knee current of 150,uAand operation over a wide range of temperatures and currents.

Contextual Info: WhHì H E W L E T T AUHM PA C K A R D Avantek Products Thin-Film Cascadable Amplifier Module 20 to 200 MHz Technical Data UTO/UTC 222 Series Features Description Pin Configuration • Frequency Range: 20 to 200 MHz The 222 Series is a thin-film, high gain, low-noise, RF cascade

TL4941

Abstract: TL495C TL494C pin diagram TL493C TL495 TL493 ST TL493 L495C tl 494 L493
Contextual Info: TL493, TL494, TL495 PULSE WIDTH MODULATION CONTROL CIRCUITS D 2 5 3 5 , JA N U A R Y 1 9 8 3 Complete PW M Power Control Circuitry • Uncommitted Outputs for 2 0 0 -m A Sink or Source Current Output Control Selects Single-Ended or Push-Pull Operation •

2SA1474

Abstract: A147 SC46 T0220AB
Contextual Info: Ordering num ber: EN 2526 2SA1474/2SC3780 PNP/NPN Epitaxial Planar Silicon Transistor SANYO Ultrahigh-Definition CRT Display _Video Output Applications i Applications . Video output . Color TV chroma output . Wide-band amp Features . High fT fT typ=800MHz

CD 9088

Contextual Info: What WL'EM HEW LETT PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 518 Series Features • Frequency Range: 5 to 500 MHz • High Dynamic Range • High Power Output: +24.5 dBm Typ • Noise Figure: 5.5 dB (Typ)

Contextual Info: Whp% LETT mL'HM PHEW ACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1033 Series Description Features The 1033 Series is a general• Frequency Range: 5 to 1000 MHz purpose, high-performance thinfilm RF amplifier with resistive

M16GZ47

Abstract: m16jz47 M16GZ47A SM16J 2428M SM16Z47A SM16JZ47A 16GZ47 16JZ47
Contextual Info: TOSHIBA SM16 GJ Z47 SM16(GJ)Z47A Triac U n it in m m Silicon Planar Type A C Power Control Applications F e a tu re s • Repetitive Peak Off-State Voltage - VDRM = 400, 600V • R.M.S, O n-State Current ‘ ^T(RMS) = 1 6 A • High Com m utating (dv/dt) • Isolation Voltage