TC 494 C Search Results

Contextual Info: SEMiX501D17Fs Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 494 A Tc = 100 °C 417 A Tj = 25 °C 2740 A Tj = 150 °C 2140 A Tj = 25 °C 37538 A²s Tj = 150 °C 22898 A²s VRSM 1700 V VRRM 1700 V -40 . 150 °C -40 . 125 °C 1 min 4000

Contextual Info: SEMiX501D17Fs Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 494 A Tc = 100 °C 417 A Tj = 25 °C 2740 A Tj = 150 °C 2140 A Tj = 25 °C 37538 A²s Tj = 150 °C 22898 A²s VRSM 1700 V VRRM 1700 V -40 . 150 °C -40 . 125 °C 1 min 4000

TC 494 C

Abstract: D428N ka 494
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Kathode Cathode ø 23 1,1 8,5 4 14 1,1 Leistungsgleichrichterdioden Power Rectifier Diodes D 428 N ø 23 Anode ø3,5 +0.1 x 2 tief / depth beidseitig / on both sides 41 19,5 x. 7 ma 2 VWK July 1996

AOD4120L

Abstract: AOD4120
Contextual Info: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard

AOD476

Abstract: E3V3-T81 TR130
Contextual Info: AOD476 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD476 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard

AOD472

Abstract: TRANSISTOR aoD472 Features AOD472
Contextual Info: AOD472 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD472 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

Contextual Info: X Series Data Sheet 375, 500 Watt AC-DC and DC-DC DIN-Rail Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available • Rugged 35 mm DIN-rail snap-fit design • Class I equipment • Universal AC-input with single stage conversion AC to

BTS 308

Abstract: PD750 3 phase ac motor control with ccs CITEC 22KA diode DB 3 C program motor control with ccs software specification Note U-96 TAIS SOT VCT 492 x P121 PIN
Contextual Info: REJ09B0037-0103 16/32 M32C/85 Group M32C/85, M32C/85T Hardware Manual RENESAS 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 SERIES Before using this material, please visit our website to verify that this is the most current document available.

rm0031

Abstract: 7 SEGMENT DISPLAY LT 543 PIN CONFIGURATION CH7E ch9i bgf 119 data sheet MARKING P1F STM8l one pulse mode stm8l power consumption IO CH11M infrared receiver ch8i
Contextual Info: RM0031 Reference manual STM8L15x microcontroller family Introduction This reference manual targets application developers. It provides complete information on how to use the STM8L15x microcontroller memory and peripherals. The STM8L15x is a family of microcontrollers with different memory densities, packages

DCJK37P

Abstract: A7n 84 DEJK9P4 DEJT9S1-A190 DAJK15S DAJT3WK3S9-1AON-A190 DEJK9S4-1U7N-146
Contextual Info: Filter D D Subm iniature D*JK/D*JT ilter connectors series D*JKand D*JTfrom ITT Cannon esp ecially designed for commercial applications provide excellent protection against EMI and RFI. F Using D Subminiature standard components a cost-effective production can be achieved as well

AOD480

Abstract: AOD488
Contextual Info: AOD480 N-Channel Enhancement Mode Field Effect Transistor General Description 1.4 Features VGS=10V, ID=18A The AOD480 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load

Contextual Info: Revised Mar. 1998 JS9P10-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power atldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm

SKM400GB125D

Abstract: SKM400GAL125D
Contextual Info: SKM 400GB125D ' 3 ,4 5#      Absolute Maximum Ratings Symbol Conditions IGBT 6#2 '7 3 ,4 5# # '7 3 4- 5# ),- 6 9- $ '  3 :- 5# *- $ - $ = ,- 6 )- A '  3 ,4 5# *B- $ '  3 :- 5# ,- $ - $ '7 3 )4- 5# ,:- $ '  3 ,4 5#

Contextual Info: SKM 400GB125D ' 3 ,4 5#      Absolute Maximum Ratings Symbol Conditions IGBT 6#2 '7 3 ,4 5# # '7 3 4- 5# ),- 6 9- $ '  3 :- 5# *- $ - $ = ,- 6 )- A '  3 ,4 5# *B- $ '  3 :- 5# ,- $ - $ '7 3 )4- 5# ,:- $ '  3 ,4 5#

Contextual Info: Revised Mar. 1998 JS9P10-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power atldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm

Contextual Info: T A ^ CiA I Fl f BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC o GENERAL USE SWITCHING REGULATOR 494 TYPE C Unit in mm The TA76494F is an IC for 494 type switching H H I R H-fl H_a regulator, with 5V reference voltage, built-in error amplifier, saw tooth wave generating

NTE485

Abstract: NPN planar RF transistor
Contextual Info: NTE485 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 866MHz Description: The NTE485 is an NPN Silicon Epitaxial Planar Transistor that was designed for amplifier applications in the 806−866MHz frequency range. Internal input matching and Common Base Configuration assure optimum gain and efficiency across the entire frequency band.

Contextual Info: Power T ransistors 2SC3868 2SC3868 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features U n it I mm 4.4 max. ,10 .2 m ax . 5.7m ax. • High speed switching 2.9m ax • High collector-base voltage V c b o

FLM5964-18

Contextual Info: FLM5964-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50W

Contextual Info: FLM5964-18F C-Band Internally Matched FET FEATURES • • • • High Output Power: P ^ b = 43.0dBm Typ. High Gain: G ^ b = 10.0dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q

L98n

Contextual Info: BCW69 BCW70 DIM Inches Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C - 1.10 - 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 NOM 0.075 K 0.01 0.10 0.0004 0.004 L 2.10 2.50 0.0825 0.0985 N I- E - Millimeters Min NOM 0.95

L98n

Abstract: NE44
Contextual Info: DIM Inches Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C - 1.10 - 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 NOM 0.075 K 0.01 0.10 0.0004 0.004 L 2.10 2.50 0.0825 0.0985 N I- E - M illim eters M in NOM 0.95 NOM 0.37

ik 937

Abstract: FLM5964-18F
Contextual Info: FLM5964-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω

2sc790

Abstract: transistor 2SC 790 c790 2SA490 AC75 jd2030 SS4490 2SC790 O
Contextual Info: 2 s c 790 o ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR n tim m m o Power Amplifier Applications 3 S A 4 9 0 £ 3 V 7 *iJ H i - F i OTL / y jt ' J T t i i ^ l O W ^ ^ ^ 7 y 7 K M '& 'Z 't o Complementary to 2SA490 10 Watts Output is Available. MAXIMUM RATINGS Ta=g5"C