TC 317 C Search Results

MALLORY tcg capacitors

Abstract: G252U
Contextual Info: I Type TCG MallorY Axial Leaded Capacitors 85°C Industrial G rade A xial Leads fo r Lo w Profile M ounting Long Life H igh R eliability GENERAL SPECIFICATIONS D C L e a ka g e C u rrent: I = 6 V C V a fte r 5 m inutes N ot to exce ed 3m A C = C a p a cita n ce in yu,F

317 MOSFET

Abstract: Control of Starter-generator starter/generator D-68623 Power MOSFET 30 A, 60 V, Logic Level POWER MOSFET Logic Level logic level low rdson
Contextual Info: FMM 140-004PL Advanced Technical Information ID25 = 140 A VDSS = 40 V Ω RDSon = 4.0 mΩ Trench Power MOSFET logic level gate control -Phaseleg Topologyin ISOPLUS i4-PACTM 3 T1 5 4 1 T2 1 2 5 Features Symbol Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings

FOL1435

Abstract: FOL1435R50 amplifier 2606 FOL1435Rxx-617-xxxx FOL1435R40
Contextual Info: Data Sheet FOL1435 Series Feb. 2011 High power 1480 / 14xx-nm Pump Laser Diode Module Applications z Pump Source for EDFA ¾ C- and/or L-Band EDFA z Pump Source for Raman Amplifier ¾ C-band Product Type : FOL1435 Series Descriptions z The FOL1435 series has been designed for use in a wide variety of optical amplifier,

ra86

Abstract: PLANON ECG7400 osram planon 7400 cd 000-H50 24v to 230v inverters circuit ECG book 40-80KHz
Contextual Info: OSRAM PLANON Technical Information Edition: 05/2002 - subject to change Status: preliminary PLANON 18,1“/874 Technical Information for Systems: Lamp Inverter/ECG Diffuser Set PLANON 18,1”/874 2-5 PLANON 18,1”/874 2-5 + + 2x QT PLANON 18,1”/40/24 2 +

Contextual Info: APTM20AM05FG Phase leg MOSFET Power Module VDSS = 200V RDSon = 5m typ @ Tj = 25°C ID = 317A @ Tc = 25°C Application VBUS •    Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features S1

transistor 2432

Contextual Info: APTM20SKM05 Buck chopper MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • AC and DC motor control Switched Mode Power Supplies Features • • • • 0/VBUS OUT Benefits • • • • Outstanding performance at high frequency operation

Contextual Info: u ^ y P - n K U tipe Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D 1 5 L C 2 Case : ITO-220 U 200V 15A g a s a •e y -Y X # trr3 5 n s •7 J IÆ -J U F •SR W S • Z 7 U — tK^TJL» h.1 - l-J •mm. OA. hbk •a « , a s, rn fa RATINGS A b s o lu te M a x im u m R a tin g s

FRF9450H

Contextual Info: HA RR IS SEF1IC0ND S E CT OR HARRIS S E M I C O N D U C T O R HARRIS RCA GE 40E D O BJECTIVE 4 3 Ü 2 2 7 1 0G3364fl T H I H A S 2 N 7 3 2 7 R , 2N 7327H REGISTRATION PENDING Available As FRF9450R, FRF9450H INTERSIL -r^ o ' “ O 'n - O 5A- - 500V RDS on =1.82n

APT30DL60B

Contextual Info: APT30DL60B G APT30DL60S(G) 600V 30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

2N7320

Contextual Info: HA RR IS SEIIICOND S E C T O R MDE D CjjJ] H A R R I S U U Z T OBJECTIVE S E M I C O N D U C T O R • RC A . 0« ■ EB 4302571 00338m V BHAS 2N7320R, 2N7320H REGISTRATION PENDING Available As FRM9440R, FRM9440H is T E R sii T ^ I 2.5A.-500V R D S o n = 4 .2 0 n

Contextual Info: IRLW/I540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ b v dss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10 HA Max. @ VDS= 100V

4801 MOSFET

Abstract: IR 529 MOSFET TC 9151 P wiper motor 12v dc ST72334J4 dpak mosfet motor control DC 12v LDP24A relay 4130 globe DC motors D 4515
Contextual Info: Complete Standard Solutions for Automotive DC-Motor Control TD340 H-Bridge Driver Application example: Smart Wiper System With ST’s TD340, wiper systems are not only simpler and more reliable, but they can have more functionality, too. A complete smart wiper solution, which features current monitoring and active

220g

Contextual Info: MOSFET MODULE PDM1102H Dual 110A /250V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible TYPICAL APPLICATIONS

Contextual Info: MOSFET MODULE P2HM1102H Dual 110A /250V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

SSD95N03

Abstract: MosFET 95N03
Contextual Info: SSD95N03 96A , 30V , RDS ON 4mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) The SSD95N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

Contextual Info: StrongIRFET™ IRFB7434PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

mrf8372

Contextual Info: MOTOROLA Order this document by MRF837/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics

Contextual Info: ¿ 888888888 p | M iwiHBBffi smsssBPe itittnnnnn .rfHHHHHHHHMh. m 1 1 c hhhhhhk-. o iiHiiftBHhr. f l I I ^88888 % # 1 Data Sheet No. 2N 4449 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N4449 Type 2N4449 Geom etry 0005 Polarity NPN Qual Level: Pending REF: M IL-P R F -19500/31 7

ISG56525A

Contextual Info: 5 TO 65 MHz SILICON CATV 25 dB HYBRID AMPLIFIER ISG56525A OUTLINE DIMENSIONS Units in mm [inches] FEATURES • FLAT GAIN RESPONSE FROM 5 TO 65 MHz (±0.2 dB) ISG56525A • EXCELLENT RETURN LOSS AND STABILITY OVER TEMPERATURE (RL = 20 dB) 45.08 [1.775] MAX

Contextual Info: l4 flS S l4S2 International H »] Rectifier 317 « IN R PD-9.641A IRFI820G HEXFET P ow er M O S F E T • • • • • D O lS lb b IN T E R N A T IO N A L R E C T IF IE R Isolated Package High Voltage Isolation^ 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

GT300FD060N

Contextual Info: VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A FEATURES • Trench plus Field Stop IGBT technology • FRED Pt antiparallel and clamping diodes • Short circuit capability • Speed 4 kHz to 30 kHz

ISG56531

Abstract: ISG RF MODULE
Contextual Info: ISG56531 5 TO 65 MHz SILICON CATV 31 dB HYBRID AMPLIFIER OUTLINE DIMENSIONS Units in mm [inches] FEATURES ISG56531 • FLAT GAIN RESPONSE FROM 5 TO 65 MHz: ± 0.2 dB 45.08 [1.775] MAX 38.10 ± 0.25 [1.500 ± .010] 3.49 [.137] • INPUT AND OUTPUT MATCHING TO 75 OHMS:

IEC61071

Abstract: IEC-61071
Contextual Info: • HIGH CURRENT HANDLING CAPABILITY  BULK CAPACITANCE STORAGE  LOW ESL DESIGN  >100K HOUR LIFE  HIGH DV/DT  CUSTOMIZABLE  IEC61071 COMPLIANT CHARACTERSTICS TABLE TOTAL CAPACITANCE µF 5300 VOLTAGE (UNDC) W (“) T (“) H (“) HS (“)

g10n50c1

Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1
Contextual Info: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs