TC 317 C Search Results

SHD217302

Contextual Info: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

MALLORY tcg capacitors

Abstract: G252U
Contextual Info: I Type TCG MallorY Axial Leaded Capacitors 85°C Industrial G rade A xial Leads fo r Lo w Profile M ounting Long Life H igh R eliability GENERAL SPECIFICATIONS D C L e a ka g e C u rrent: I = 6 V C V a fte r 5 m inutes N ot to exce ed 3m A C = C a p a cita n ce in yu,F

317 MOSFET

Abstract: Control of Starter-generator starter/generator D-68623 Power MOSFET 30 A, 60 V, Logic Level POWER MOSFET Logic Level logic level low rdson
Contextual Info: FMM 140-004PL Advanced Technical Information ID25 = 140 A VDSS = 40 V Ω RDSon = 4.0 mΩ Trench Power MOSFET logic level gate control -Phaseleg Topologyin ISOPLUS i4-PACTM 3 T1 5 4 1 T2 1 2 5 Features Symbol Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings

FOL1435

Abstract: FOL1435R50 amplifier 2606 FOL1435Rxx-617-xxxx FOL1435R40
Contextual Info: Data Sheet FOL1435 Series Feb. 2011 High power 1480 / 14xx-nm Pump Laser Diode Module Applications z Pump Source for EDFA ¾ C- and/or L-Band EDFA z Pump Source for Raman Amplifier ¾ C-band Product Type : FOL1435 Series Descriptions z The FOL1435 series has been designed for use in a wide variety of optical amplifier,

2n4449

Contextual Info: Data Sheet No. 2N4449 Generic Part Number: 2N4449 Type 2N4449 Geometry 0005 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/317 Features: • • • • General-purpose high-speed switching transistor. Housed in a TO-46 case. Also available in chip form using

APTM20AM05F

Contextual Info: APTM20AM05F Phase leg MOSFET Power Module VDSS = 200V RDSon = 5mW max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • · · · Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features · · · G1 VBUS 0/VBUS

ra86

Abstract: PLANON ECG7400 osram planon 7400 cd 000-H50 24v to 230v inverters circuit ECG book 40-80KHz
Contextual Info: OSRAM PLANON Technical Information Edition: 05/2002 - subject to change Status: preliminary PLANON 18,1“/874 Technical Information for Systems: Lamp Inverter/ECG Diffuser Set PLANON 18,1”/874 2-5 PLANON 18,1”/874 2-5 + + 2x QT PLANON 18,1”/40/24 2 +

Transformer kaschke 063

Abstract: kaschke ferrite material K6000 Transformer kaschke Transformer kaschke 15/00 kaschke BR 8050 K6000 kaschke CORES kaschke ferrite material K10000
Contextual Info: Automotive Electronics Industrial Electronics Ringkerne aus MnZn-Ferrit für EMV und Breitbandübertrager MnZn ferrite ring cores for EMC and broadband transformers Entertainment Electronics Consumer Goods Industry Telecommunications Lighting Electronics GMBH & CO. WWW.KASCHKE.DE

Contextual Info: APTM20AM05FG Phase leg MOSFET Power Module VDSS = 200V RDSon = 5m typ @ Tj = 25°C ID = 317A @ Tc = 25°C Application VBUS •    Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features S1

0821 ST

Abstract: st 2903 RF 3132 filter, center frequency 1340, bandwidth 185
Contextual Info: RF1417E • • • • Ideal Front-End Filter for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC RoHS Pb The RF1417E is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 315.0 MHz receivers. Receiver designs using this filter include superhet with

Contextual Info: HR8202TG Si APD Description The HR8202TG is a Si avalanche photodiode which responds to a 0.6 to 0.9 |am band. Its high frequency characteristics make it suitable as an optical detector especially for analog optical transmission systems. Features • • •

Contextual Info: y a .y h dr/s: lj K Surface Mounting^Deviœ Schottky Barrier Diode Twin Diode •W fêvhÆ E ] DF30PC3M OUTLINE DIMENSIONS Case : STO-220 30V 30A •S M D • ¡B ffiV F = 0 .4 V m ffl i î • A '> x U - i ï S K ± • D C tÜ ^ O R ffl • D C / D C n v A — 5>

transistor 2432

Contextual Info: APTM20SKM05 Buck chopper MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • AC and DC motor control Switched Mode Power Supplies Features • • • • 0/VBUS OUT Benefits • • • • Outstanding performance at high frequency operation

2N7326

Contextual Info: i HARRIS U a J HARRIS S E M I C O N D U C T O R RCA GE M305S71 0033647 8 « H A S 4QE J> HARRIS SEPIICONI SECTOR OBJECTIVE 2N7326R, 2N7326H REGISTRATION PENDING Available As FRM9450R, FRM9450H INTERSIL _ 6A, -5 0 0 V RDS on =1.80n This Objective Data Sheet Represents the Proposed Device Performance.

BI326

Abstract: I326 2SA1605
Contextual Info: Power Transistors 2SAT605 2SA1605 Silicon PNP Epitaxial Planar Type Package Dim ensions G eneral Amplifier Un it I mm • Feature 10.0 • H igh c o lle c to r-e m itte r v o lta g e V 0.5 ceo h £ 6.5 ■ Absolute Maximum Ratings (Ta=25°C) Symbol Value

FRF9450H

Contextual Info: HA RR IS SEF1IC0ND S E CT OR HARRIS S E M I C O N D U C T O R HARRIS RCA GE 40E D O BJECTIVE 4 3 Ü 2 2 7 1 0G3364fl T H I H A S 2 N 7 3 2 7 R , 2N 7327H REGISTRATION PENDING Available As FRF9450R, FRF9450H INTERSIL -r^ o ' “ O 'n - O 5A- - 500V RDS on =1.82n

IRF830.831

Abstract: Irf830
Contextual Info: N-CHANNEL POWER MÛSFETS IRF830/831 FEATURES • • • • • • • Lower R ds On Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

17-18 Bg

Abstract: tea 2146 MPC555 Motorola MPC555 tea 1713 quanta FG 2149 RAM 2147 RAM
Contextual Info: INDEX –A– Bit-time 14-47 BKPT TPU asserted 17-14 BLC 17-13 BOFFINT 16-31 Boundary conditions 13-16 Boundary scan cells 22-1 descriptor language 22-7 register 22-1 BPU 3-5 BQ2 13-16, 13-38 BR, 9-7 Branch prediction 3-5 processing unit 3-5 trace enable 3-21

APT30DL60B

Contextual Info: APT30DL60B G APT30DL60S(G) 600V 30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

2N7320

Contextual Info: HA RR IS SEIIICOND S E C T O R MDE D CjjJ] H A R R I S U U Z T OBJECTIVE S E M I C O N D U C T O R • RC A . 0« ■ EB 4302571 00338m V BHAS 2N7320R, 2N7320H REGISTRATION PENDING Available As FRM9440R, FRM9440H is T E R sii T ^ I 2.5A.-500V R D S o n = 4 .2 0 n

Contextual Info: MOSFET MODULE PDM1102H Dual 110A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible TYPICAL APPLICATIONS

Contextual Info: IRLW/I540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ b v dss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10 HA Max. @ VDS= 100V

lm 317

Abstract: LM217 NATIONAL LM317TE
Contextual Info: LM217, LM317 3 TERMINAL AD JU STABLE REGULATORS D 2 2 1 2 , SEPTEMBER 1 9 7 7 -R E V IS E D FEBRUARY 1 9 8 8 Output Voltage Range Adjustable from 1.2 V to 3 7 V Peak Output Current Constant Over Temperature Range of Regulator Output Current Capability of 1 .5 A Max

4801 MOSFET

Abstract: IR 529 MOSFET TC 9151 P wiper motor 12v dc ST72334J4 dpak mosfet motor control DC 12v LDP24A relay 4130 globe DC motors D 4515
Contextual Info: Complete Standard Solutions for Automotive DC-Motor Control TD340 H-Bridge Driver Application example: Smart Wiper System With ST’s TD340, wiper systems are not only simpler and more reliable, but they can have more functionality, too. A complete smart wiper solution, which features current monitoring and active