TC 30I Search Results

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

J965

Abstract: FJN965
Contextual Info: FJN965 FJN965 For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: FJN965 FJN965 For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: FJN965 FJN965 For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

FJN965

Contextual Info: FJN965 FJN965 For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

FJN965

Contextual Info: FJN965 FJN965 For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

FJN5471

Contextual Info: FJN5471 FJN5471 For Output Amplifier of Electronic Flash Unit • High DC Currrent Gain • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

FJN5471

Contextual Info: FJN5471 FJN5471 For Output Amplifier of Electronic Flash Unit • High DC Currrent Gain • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: FJN5471 FJN5471 For Output Amplifier of Electronic Flash Unit • High DC Currrent Gain • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: V T C INC b4E D W S 4 VValue TC In c . the Customer ^ 300^ D0G3 ^31 2G1 VM7120 2, 4, 6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES TWO/THREE TERMINAL S SERVO PREAMPLIFIERS • High Perform ance - Read Gain = 300 V /V Typical

2SA781K

Abstract: 2sa781 2SA78
Contextual Info: HITACHI 2SA781 g SILICON PNP EPITAXIAL HIGH FREQUNCY AMPLIFIER HIGH SPEED SWITCHING „5 2«ul « ?rio *r ° A “ “ " I Z p= r~ — X l -Aj i ! Pi O „1 : i a I Éirniltçr 2. Colkcux l Bau: (D m tc a * io rt* in trim (JED EC TO-92) MAXIMUM COLLECTOR DISSIPATION

Contextual Info: £S S ~!20-T/05 ESS-1 8 -6/26 M a te s with: TS. TC, HTS. BBS. B8D. BBL BCl. BHS, LBS TYPE M 1 I NO. PINS STRIP l a J 1 I PER ROW Specifications: ESS, ESD Insulator Material: « “ Black Glass Filled Polyester Flammability Rating: UL 94V'0 Insulation Resistance:

CSF 672-28

Abstract: ABB thyristor CSA 932 csa 932 abb HEKSV-932 ABB HEKSV thyristors abb thyristors HEKSV-672 abb ys thyristor thyristoren
Contextual Info: V. T " j A B B SEMICONDUCTORS A6 Fast Switching Thyristors Ordering number Bestellnummer Num. de commande □Glbö3 fl 0 0 00 0 3 4 4 E IABB 3 ÖE D Schnelle Thyristoren V drm V rrm I trms T c = 5 0 °C Thyristors rapides I tavm I tsm Tc = 85°C A tp = 10 ms

AC 151 rIV equivalent

Contextual Info: h a r r is S E M I C O N D U C T O R FSL9110D, FSL9110R " • M ■ W » ■ Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Features Description • 2.5A, -100V, r[js ON = 1-30i2 T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r

Contextual Info: Analog Power AM40N10-30I N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits

MIL-S-8805

Abstract: MS24420-2 42EN1-6
Contextual Info: MICRO SWITCH FREEPORT IL L IN O IS . A OF D IV IS IO N FED. MFG. C A T A LO G LIST IN G 42EN1-6 SW ITCH -EN CLO SED U S A HONEYW ELL .^ C IR C U IT S M IL IT A R Y STANDARD MS 2 4 4 2 0 - 2 CO DE 9 1 S 2 9 -.037 OIA H O LE FOR W IRC LOCKING 30I*REF I 2 ° max

Contextual Info: • THYRISTOR MODULES CONTINUED Max. ratings Electrical characteristics Sage on Criticai tote Criticai Gate Gate (forward) rate-Ot-nseof tapis- rate-off¡»of trigger trigger -current ern-current kre off-«ltage current voltage di/dt dv/dt IfSM kr SA) re) (V/ ft s} (mA)

RL-1252

Abstract: 2N5755 2521a
Contextual Info: 2N5755 TRIAC PACKAGE STYLE T O - 39 s Y DESCRIPTION: The 2N5755 is a Medium Current Triac Designed for General Purpose Power Control Applications. MAXIIt1UM RATINGS 2.5 A lc V ce P gm RMS 200 V (GATE OPEN) T stg -40 °C t o +150 °C Vt VDRm = 200 V lT = 3.5 A/10 A

Contextual Info: GT30J301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT3QJ3Q1 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed ; tf=0t30/¿s Max, Low Saturation Voltage : Vq e (sat)~^.7V (Max.)

Contextual Info: Preliminary SGR20N40L / SGU20N40L N-CHANNEL IGBT FEATURES * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive APPLICATIONS *Strobe Flash ABSOLUTE MAXIMUM RATINGS Rating Units Collector-Emitter Voltage 450 V V ges Gate-Emitter Voltage

SH400U21D

Abstract: SH400 tta50
Contextual Info: SH400 N,Q,R,U 21D HIGH-SPEED THYRISTOR SILICON DIFFUSED TYPE HIGH SPEED APPLICATIONS. Unit in mm FEATURES: . Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage VdRM I _ 1 0 0 0 - 1 6 0 0 V VRRM . Average On-State Current It (AV)=400A . Turn-Off Time

Contextual Info: Protection of Lithium-Ion Batteries for Double-Protect PST7XXX MâïSUMÎ Monolithic IC PST7XXX This 1C is used for double-protection of lithium-ion batteries with one cell. Some models can also be used for pulse charging. 1. 2. 3. 4. Detection voltage accuracy (Ta=25°C)

SGR20N40L

Abstract: SGU20N40L
Contextual Info: Prelim inary N-CHANNEL IG B T SGR20N40L / SGU20N40L D-PAK FE A TU R ES * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive 4 * A P P LIC A TIO N S *Strobe Flash A B S O LU TE M AXIM U M RA TIN G S Rating Units C ollector-Em itter Voltage

PQFP100

Abstract: ST10 ST10R165 TQFP100 st10 Bootstrap
Contextual Info: >7/ SGS-THOMSON IMlUCBiataniUKBmiMtKBS ST10R165 16-BIT ROM LESS M ICRO CO NTROLLER A D V A N C E D A TA • High performance 16-bit CPU with 4-stage pipeline ■ 100 nsinstructioncycle tim eat20-M H zC PU clock ■ 500 ns multiplication 1 6 x 16 bits , 1 (is division