TC 2216 Search Results

Contextual Info: VBO 22 IdAVM = 21 A VRRM = 1200-1800 V Single Phase Rectifier Bridge + Type 1200 1400 1600 1800 1200 1400 1600 1800 VBO 22-12NO8 VBO 22-14NO8 VBO 22-16NO8 VBO 22-18NO8 Symbol Test Conditions IdAV IdAVM TC = 85°C, module TC = 63°C, module IFSM TVJ = 45°C;

Contextual Info: VBO 22 Single Phase Rectifier Bridge VRSM V 900 1300 1700 1900 VRRM V 800 1200 1600 1800 IdAV = 21 A VRRM = 800-1800 V ­­- + Type VBO 22-08NO8 VBO 22-12NO8 VBO 22-16NO8 VBO 22-18NO8 ~ ~ ~ - Symbol Conditions IdAV IdAVM TC = 85°C, module TC = 63°C, module

DSA00371128.

Contextual Info: VBO 22 Three Phase Rectifier Bridge VRSM VDSM VRRM VDRM V 800 1200 1400 1600 1800 V 800 1200 1400 1600 1800 IdAV IdAVM TC = 85°C, module TC = 63°C, module IFSM TVJ = 45°C; VR = 0 I2t ~ - Maximum Ratings Features • Package with ¼" fast-on terminals • Isolation voltage 3000 V~

Contextual Info: VBO 22 Single Phase Rectifier Bridge VRSM VDSM VRRM VDRM V 800 1200 1400 1600 1800 V 800 1200 1400 1600 1800 IdAV IdAVM TC = 85°C, module TC = 63°C, module IFSM TVJ = 45°C; VR = 0 ~ - Maximum Ratings A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz) 380 440 A A

22-16 diode

Contextual Info: □ IX Y S VBO 22 Single Phase Rectifier Bridge V RSM V RRM V V 1200 1400 1600 1800 1200 1400 1600 1800 VBO VBO VBO VBO ^dAV Tc = 85°C, module Tc = 63°C, module l2t Maximum Ratings 380 440 A A T"vj = Tvjm V R= 0 t = 10 ms 50 Hz , sine t = 8.3 ms (60 Hz), sine

22-16N

Contextual Info: VUO 22 Three Phase Rectifier Bridge VRSM/DSM V 900 1300 1500 1700 1900 VRRM/DRM V 800 1200 1400 1600 1800 VUO 22-08NO1 VUO 22-12NO1 VUO 22-14NO1 VUO 22-16NO1 VUO 22-18NO1 Conditions IdAV IdAV IdAVM TC = 90°C, module TA = 45°C RthKA = 0.5 K/W , module module

Contextual Info: M M Í2 1 001731M TMO • MITSUBISHi RF POWER MODULE M57797SH 490-512MHz, 12.5V, 7W, FM PORTABLE RADIO PIN : P in RF INPU T ©VCCI 1st. DC SUPPLY © VB B BASE BIAS SUPPLY VCC2 2nd, DC SUPPLY ®PO RF O UTPUT ®GND FIN ABSOLUTE MAXIMUM RATINGS Tc = 25'1C unless otherwise noted

IRFF9131

Abstract: IRFF9133 IRFF9130 IRFF9132 transistors c 2216
Contextual Info: Rugged Power MOSFETs IRFF9130, IRFF9131 IRFF9132, IRFF9133 F ile N u m b e r 2216 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5A and -6.5A, -60V and -100V ibs on = 0.30Q and 0.400 TERMINAL DIAGRAM □ Features: • S in g le p u ls e a va la n ch e e n e rg y ra te d

E1 3007

Contextual Info: : :jSwNP HIGH-SPEED 4K x 9 SYNCHRONOUS DUAL-PORT RAM y IDT7099S Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed clock-to-data output tim es — M ilitary: 20/25/30ns max. — C om m ercial: 15/20/25ns (max.) • Low -pow er operation

Contextual Info: HIGH-SPEED 3.3V 32K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9079S/L Features: additional logic Full synchronous operation on both ports True Dual-Ported memory cells which allow simultaneous access of the same memory location * High-speed clock to data access

diode avalanche DSA 2-16a

Abstract: diode avalanche DSA diode avalanche DSA 1-14 DSA 22-12 A diode avalanche DSA 17-14 A diode avalanche DSA 25 8
Contextual Info: A S E A BRO WN/ABB SEMICON 03 D I 00MÖ3DÖ □ □ □ □ ! £ ? I T - o I- ot SE2HHS£tu7"^ Netzdioden Rectifier diodes Diode Vrrm IpRMS Ifavi os DSA Typ/type DS DS DS DS DS 1-04 1-08 1-12 1-14 1-16 f DSI DS 1,2-04 E DS 1,2-08 E DS 1,2-12 E DS 1,2-14 E

PSS-04-103

Abstract: saab space packet wire TME 87 PSS-04-151 P-ASIC-NOT-00122-SE PSS-04-106 K1784 TME 57 PSS-04-107 SAAB
Contextual Info: Saab Space AB Dokument ID Document ID Frisläppt datum Date Released Utgåva Issue Informationsklass Classification P-ASIC-NOT-00122-SE 2007-04-23 12 Company Restricted Sida Page 2 SUMMARY The SCTMTC ASIC User's Manual defines how the SCTMTC ASIC is to be used.

Contextual Info: PRELIMINARY IDT709149S HIGH-SPEED 36K 4K x 9-BIT SYNCHRONOUS PIPELINED DUAL-PORT SRAM F e a tu re s ♦ 13ns cycle time, 76MHz operation in pipeline mode * Architecture based on Dual-Port SRAM cells - - Allow s fu ll sim ultaneous access from both ports

transistor c5578

Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
Contextual Info: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012

UA79M12C

Abstract: UA79M12CT J2JF UA79M24C uA79M20 UA79M05M s120c
Contextual Info: UA79M00 SERIES NEGATIVE-VOLTAGE REGULATORS _ D 2216. JUNE 1976 - R EVISED SEP TE M BE R 1991 * 3-Termlnal Regulators * Output Current Up to 500 mA * No External Components * High Power Dissipation Capability * Internal Short-Circuit Current Limiting

C102Z

Abstract: C4688 c4589 ax zzz hen tv kcdl b25z
Contextual Info: :nj5'sN m CMOS SyncBiFIFO 64 x 36 x 2 IDT723612 Integrated Devize Technology, Inc. • • • • Low -power advanced CMOS technology Supports clock frequencies up to 67 MHz Fast access tim es of 10ns Available in 132-pin plastic quad flat package PQF) or

Contextual Info: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V

Contextual Info: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V

Contextual Info: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V

Contextual Info: IDT723622 IDT723632 IDT723642 CMOS SyncBiFlFO 256x 36x 2, 512x 36x 2, 1,024x 36x 2 I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • Free-running C LK A and CLKB may be asynchronous or coincident sim ultaneous reading and w riting of data on a

Contextual Info: HIGH-SPEED 16Kx 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709269S/L F ea tu re s: • True D ual-Ported m em ory c e lls w hich allow sim u lta n e o u s • • H igh -sp e e d c lo c k to data a c c e s s • Commercial: 9/12/15ns max.

gr17

Abstract: PT6355 GR16 seven segment display thk settings SEG2SEG15
Contextual Info: PT6355 VFD Driver/Controller IC DESCRIPTION PT6355 is a Vacuum Fluorescent Display Controller driven 5/16, 6/16, 14/16 and 15/16 duty factors. Eight to Eighteen Segment Output Lines, Seven to Ten Grid Output Lines, Ten Segment/Grid Output Drive Lines, 8-bit x 6-channel A-D Converter, Built-in Noise Filter

TIXXX

Contextual Info: HIGH-SPEED 64K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709089S/L F ea tu re s: * * True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access - * * - F ast 9ns clock to data o u t in the P ipelined output m ode

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches