TBA 910 Search Results

2275R

Abstract: tba 940 ADV7197 RS-170 RS-343A SMPTE-274M R1920T V719 MR01M IC AD8002
Contextual Info: a Multiformat HDTV Encoder with three 11-Bit DACs ADV7197 Preliminary Technical Data INPUT FORMATS YCrCb in 2x10-Bit 4:2:2 or 3x10-Bit (4:4:4) format compliant to SMPTE-274M (1080i), SMPTE-296M (720p) and any other High Definition standard using Async Timing Mode

MR50

Abstract: tba 940 ADV7196 BT1358 RS-170 RS-343A
Contextual Info: a Preliminary Technical Data Multi-format Progressive Scan/HDTV Encoder with three 11-Bit DACs and Macrovision ADV7196 INPUT FORMATS YCrCb in 2x10-Bit 4:2:2 or 3x10-Bit (4:4:4) format compliant to SMPTE-293M (525p), ITU-R.BT1358 (625p), SMPTE274M (1080i), SMPTE296M (720p)

DQ100

Abstract: transistor d514
Contextual Info: Rev. 1.0, Apr. 2010 K1C5616BKB 256Mb B-die UtRAM2 Multiplexed Synchronous Burst Uni-Transistor Random Access Memory. 16M x16bit datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K1C1616B8B

Contextual Info: K1C1616B8B UtRAM2 16Mb 1M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

20e221

Abstract: WP1J 10V471K varistor 472 ns b 10v 471k tnr 47p3 10n 471k TRANSISTOR F10 10N metal oxide varistor 471k 20k tnr g 471k
Contextual Info: METAL OXIDE VARISTORS TNR METAL OXIDE VARISTORS TNR CAT. No. E1006S INDEX PRODUCT SEARCH SERIES TABLE PRECAUTIONS AND GUIDELINES GROUP CHART PART NUMBERING SYSTEM TECHNICAL TERMS ON VARISTORS PRODUCTION GUIDE SAFETY STANDARDS TAPING SPECIFICATION PACKAGING

MR27-MR20

Abstract: EIA-770-2 ADV7195 BT1358 RS-170 RS-343A UN 76 SMPTE-293M e525 CPR1204-1
Contextual Info: a PRELIMINARY TECHNICAL DATA MULTI-FORMAT PROGRESSIVE SCAN/HDTV ENCODER WITH THREE 11-BIT DACS ADV7195 PRELIMINARY TECHNICAL DATA INPUT FORMATS YCrCb in 2x10-Bit 4:2:2 or 3x10-Bit (4:4:4) format compliant to SMPTE-293M (525p), ITU-R.BT1358 (625p), SMPTE274M (1080i), SMPTE296M (720p)

MR50

Abstract: BT1358 RS-170 RS-343A ADV7196A dv 16235 PRU12 R43M
Contextual Info: a PRELIMINARY TECHNICAL DATA MULTI-FORMAT PROGRESSIVE SCAN/HDTV ENCODER WITH THREE 11-BIT DACS, 10-BIT DATA INPUT AND MACROVISION ADV7196A PRELIMINARY TECHNICAL DATA INPUT FORMATS YCrCb in 2x10-Bit 4:2:2 or 3x10-Bit (4:4:4) format compliant to SMPTE-293M (525p), ITU-R.BT1358

270v varistor d - 302

Abstract: 270v varistor d 302 LT1/6CT26 KOA RKL MOSX3CL25A
Contextual Info: Appendix C packaging - leaded components axial tapings Straight Type Name appendix & add. information MO1/2*1 MO1/2 MO1 MO1 MO1 MO2 MO2 MO2 MOS1/2*2 MOS1/2 MOS1 MOS1 MOS1C8 MOS1 MOS2 MOS2 MOS2 MOS3 MOS3 MOS3 MOS3 SPR1/4*3 SPR1/4 SPR1/2 SPR1/2 SPR1/2 SPR1 SPR1

transistor A1624

Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
Contextual Info: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD46128512-X is a high speed, low power, 134,217,728 bits 8,388,608 words by 16 bits CMOS Mobile

Contextual Info: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR

BA512

Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Contextual Info: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh

BA339

Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: K8C56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

ba508

Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
Contextual Info: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

BA188

Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
Contextual Info: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

BA251

Abstract: 16N10
Contextual Info: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

k8a55

Abstract: BA251 samsung nor flash BA253 BA217 BA155 ba198
Contextual Info: Rev. 1.0, Nov. 2010 K8A56 57 ET(B)(Z)C 256Mb C-die NOR FLASH 16M x16, Synch Burst Multi Bank SLC NOR Flash datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

samsung ba92

Contextual Info: Preliminary FLASH MEMORY K8F56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: Preliminary UtRAM K1B2816BAA 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

K1B2816

Contextual Info: K1B2816BAA UtRAM 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

Contextual Info: Preliminary UtRAM K1B5616BAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches