TB 1225 EN Search Results

NTC 6D-20

Abstract: NTC 10D-15 Samsung TCSCS marking codes for nemco ntc 50d 9 TCSCN TEESV sprague product catalog 593d epcos Nemco
Contextual Info: S nt o H ia R pl om C NEW SIZES 0402 0603 Pb Nemco Tantalum Capacitors Since 1975 Over the past 3 decades, Nemco Electronics Corp. has brought to the world market the highest quality tantalum products. Our philosophies and processes are focused on our goal of meeting and

1225 transistor 09 d

Contextual Info: T O SH IB A 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : lipE —2000 (Min.) Low Saturation Voltage : V q £ (sat) = l*5V (Max.)

sem 2005 inverter

Abstract: SAMSUNG CHIP CAPACITOR digital watch lcd circuit
Contextual Info: SA MSUNG SEM ICO ND UC TOR INC D5 KS5114 P Ë J VTtMlMS DDDSbbb 2 | >666 D . T ~ 4*1 w/ 5 " ô Â CMOS DIGITAL INTEGRATED CIRCUIT .¿i1— - - FUNCTIONS 3.5 DIGITS WATCH CIRCUIT FOR DUPLEXED LCD. The KS5114 is low threshold voltage, ion Implanted metal gate CMOS

IEC62044-2

Contextual Info: Ferrites and accessories PQ 35/35 Cores and coil former Series/Type: B65881A, B65882E Date: Version: 2008-04-14 1 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the colour to "white" or invisible . This ensures that the table disappears for the customer

B41866C8108M

Abstract: B41866C6106M B41866C7227M B41866D8687M B41866C7477M B41866C7157M B41866C5228M B41866C7338M B41866C6226M B41866C7107M
Contextual Info: Aluminum electrolytic capacitors Single-ended capacitors Series/Type: B41866 Date: November 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

RUR3060

Abstract: RUR3040 RUR3050 power supply 12v 1a
Contextual Info: RUR 3040 R U R 3050 RUR 3060 u a d d i q H A K K IO SbE 1 • « 0 2 2 7 1 DD423T2 502 * H A S HARRIS SEMCONt SECTOR 30A Ultrafast Diode With Soft Recovery Characteristic May 1991 Features Package T0 -22 0A C TOP VIEW • Ultrafast w ith Soft Recovery Characteristic

Contextual Info: DS1225AB/AD DALLAS SEMICONDUCTOR DS1225AB/AD 64K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • D a ta retention in th e ab sen ce of V < x NC | 1 • D ata is autom atically protected during pow er loss • Directly replaces 8 K x 8 volatile static R A M or

IEC62044-2

Abstract: B65882E0004T001
Contextual Info: Ferrites and Accessories PQ Cores Series/Type: PQ 35/35 The following products presented in this data sheet are being withdrawn. Ordering Code B65882E0004T001 Substitute Product Date of Withdrawal 2010-12-10 Deadline Last Orders 2011-03-31 Last Shipments 2011-06-30

gate to drain clamp

Abstract: TB 1225 EN NIF9N05CL NIF9N05CLT4
Contextual Info: NIF9N05CL Advance Information Power MOSFET 2.6 Amps, 52 Volts N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT-223 Package http://onsemi.com 2.6 AMPERES 52 V CLAMPED RDS on = 120 mW (Typ.) Benefits • High Energy Capability for Inductive Loads

SP239

Abstract: SP232
Contextual Info: C ìk \ a _ v ^ • K^Corporation^ A * /v SP230-SP241 SIGNAL PROCESSING EXCELLENCE + 5 V POWERED RS232 DRIVERS/RECEIVERS FEATURES/BENEFITS DESCRIPTION • Operates from Single 5V Power Supply +5V and +12V- SP231 and SP239 ■ Meets Ail RS232C and V.28 Specifications

MARKING 4b 8-PIN japan

Abstract: 853052A
Contextual Info: PRELIMINARY ICS853052 DUAL LVCMOS/LVTTL-TO-DIFFERENTIAL 2.5V, 3.3V, 5V LVPECL MULTIPLEXER GENERAL DESCRIPTION FEATURES The ICS853052 is a Dual LVCMOS / LVTTL-toICS Differential 2.5V, 3.3V, 5V LVPECL Multiplexer and HiPerClockS a member of the HiPerClocks™ family of High

Contextual Info: n I I w l I I W W SURFACE MOUNT TANTALUM CHIPS THE LEADER IN TANTALUM CAPACITORS Type LSR FEATURES • Meets or exceeds EIA 535 BAAC and IECQ standards QC300801/US0001, IS - 28 • Pre-conditioned, surge current tested for maximum robustness • Capacitance range: 10 |xf to 330 nf

Contextual Info: • IW l I IW W SURFACE MOUNT TANTALUM CHIPS Type LSR FEATURES • Meets or exceeds EIA 535 BAAC and IECQ standards QC300801/US0001, IS - 28 • Preconditioned tor maximum robustness • Capacitance range: 10 jxf to 330 • Rated voltage working range 6.3-35 W VDC (at 85°G)

e170149

Abstract: tachometer speed sensor 172X150X51 172X150X38 OD1238 OD1238-48HB TACHOMETER 120x32 362X OD52
Contextual Info: OD1238 Series multifunction technology 120x120x38mm 4.72”x 4.72”x 1.5” RS 6196602: OD1238-48HB01A Tachometer Output-Open Collector Frame PBT, UL94V-0 Thermoplastic Impeller PBT, UL94V-0 Thermoplastic Power Connection 2x lead wires 300mm (12”) or

476 10k 524

Abstract: E225 tantalum capacitors surge current X200C T495 2004 K 1723 dscc 95158
Contextual Info: SOLID TANTALUM CHIP CAPACITORS Solid Tantalum Surface Mount T495 SERIES—Low ESR, Surge Robust FEATURES • • • • • • • • • Designed for very low ESR High ripple current capability High surge current capability 100% accelerated steady-state aging

R34B10B

Contextual Info: INTERNATIONAL RECTIFIER 73 D | MÖSS4S2 00072bE b | Ï Ô R ] INTERNATIONAL. RECTIFIER T - 0 / - 2 .3 Data Sheet N°- PD-2.156 R34B SERIES 1400-800 VOLTS RANGE 1260 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS PART NUMBER W v r - IV

tb 1225b

Abstract: 1225B
Contextual Info: TLC1205A, TLC1205B, TLC1225A, TLC1225B SELF-CALIBRATING 12-BIT-PLUS-SIGN UNIPOLAR OR BIPOLAR ANALOG-TO-DIGITAL CONVERTERS D2982, FEBRUARY 1 9 8 7 - REVISED AUGUST 1988 » Advanced L in C M O S " Technology TLC 1205 J OR N DUA L-IN LINE PACKAGE ► Self-C alibration Elim inates Expensive

TB 1225 EN

Abstract: PS10 PS10NG PS11 PS11NG ZPS10
Contextual Info: PS10 - ActivePS10/PS11 High PS11 - Active Low Initial Release Quad Power Sequencing Controller Features Description Sequencing of Four or More* Supplies, ICs, or Subsystems Independently Programmable Delays Between Open Drain PWRGD Flags 5ms to 200ms ±10V to ±90V Operation

PS10

Abstract: PS10NG PS11 PS11NG rtd replacement
Contextual Info: PS10 - ActivePS10/PS11 High PS11 - Active Low Initial Release Quad Power Sequencing Controller Features Description Sequencing of Four or More* Supplies, ICs, or Subsystems Independently Programmable Delays Between Open Drain PWRGD Flags 5ms to 200ms ±10V to ±90V Operation

HJU6357

Abstract: NJU6357 NJU6357C
Contextual Info: NJU6357 3 . 5 * f 7 Z 7 - A am m NJU6357 lì, 32kHz 77-A7ÿ>/\'<, " j A f f ile t t T - V • * Z IW M tT Z ri m 3 ^ ^ - 3 - * ^ 5 U iziP>, PM, 7 7 - A, X ? —X, C D5 0 7 -!' > v-y —i'S^A ?öJÄI o T t . if c , 7 - A 7 h 7 y, - y ^ T ÎT T - £ A ! t- ê , 7

Nippon capacitors

Contextual Info: HB56AW873E-5/6 64MB Buffered FP DRAM DIMM 8-Mword X 72-bit, 4k Refresh, 1 Bank Module 9 pcs of 8M X 8 components HITACHI ADE-203-858 (Z) Preliminary, Rev. 0.0 Nov. 19, 1997 Description The HB56AW 873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

OCV CM 1092

Abstract: SP 1191 MSM6576
Contextual Info: O K I Semiconductor MSM6576-XX_ Operatable at 0.9V and 7-level Detector 4-Bit Microcontroller GENERAL DESCRIPTION M SM 6576 is a 4-bit, low -pow er m icrocontroller that is manufactured in a C M O S silicon-gate process. The m icrocontroller can be started and operated at a low supply voltage of 0.9 V.

Si2333CDS

Abstract: Si2333CDS-T1-GE3
Contextual Info: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition

Diode RL 4B

Abstract: mosfet 0018 Si7868ADP
Contextual Info: Si7868ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 (A)a ID rDS(on) (W) 0.00225 @ VGS = 10 V 40 0.00275 @ VGS = 4.5 V 40 D D D D D Qg (Typ) 46 nC TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized