TB 1225 EN Search Results

NTC 6D-20

Abstract: NTC 10D-15 Samsung TCSCS marking codes for nemco ntc 50d 9 TCSCN TEESV sprague product catalog 593d epcos Nemco
Contextual Info: S nt o H ia R pl om C NEW SIZES 0402 0603 Pb Nemco Tantalum Capacitors Since 1975 Over the past 3 decades, Nemco Electronics Corp. has brought to the world market the highest quality tantalum products. Our philosophies and processes are focused on our goal of meeting and

1225 transistor 09 d

Contextual Info: T O SH IB A 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : lipE —2000 (Min.) Low Saturation Voltage : V q £ (sat) = l*5V (Max.)

Contextual Info: DS1225AB/AD DALLAS SEMICONDUCTOR DS1225AB/AD 64K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • D a ta retention in th e ab sen ce of V < x NC | 1 • D ata is autom atically protected during pow er loss • Directly replaces 8 K x 8 volatile static R A M or

gate to drain clamp

Abstract: TB 1225 EN NIF9N05CL NIF9N05CLT4
Contextual Info: NIF9N05CL Advance Information Power MOSFET 2.6 Amps, 52 Volts N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT-223 Package http://onsemi.com 2.6 AMPERES 52 V CLAMPED RDS on = 120 mW (Typ.) Benefits • High Energy Capability for Inductive Loads

SP239

Abstract: SP232
Contextual Info: C ìk \ a _ v ^ • K^Corporation^ A * /v SP230-SP241 SIGNAL PROCESSING EXCELLENCE + 5 V POWERED RS232 DRIVERS/RECEIVERS FEATURES/BENEFITS DESCRIPTION • Operates from Single 5V Power Supply +5V and +12V- SP231 and SP239 ■ Meets Ail RS232C and V.28 Specifications

Contextual Info: n I I w l I I W W SURFACE MOUNT TANTALUM CHIPS THE LEADER IN TANTALUM CAPACITORS Type LSR FEATURES • Meets or exceeds EIA 535 BAAC and IECQ standards QC300801/US0001, IS - 28 • Pre-conditioned, surge current tested for maximum robustness • Capacitance range: 10 |xf to 330 nf

Contextual Info: • IW l I IW W SURFACE MOUNT TANTALUM CHIPS Type LSR FEATURES • Meets or exceeds EIA 535 BAAC and IECQ standards QC300801/US0001, IS - 28 • Preconditioned tor maximum robustness • Capacitance range: 10 jxf to 330 • Rated voltage working range 6.3-35 W VDC (at 85°G)

e170149

Abstract: tachometer speed sensor 172X150X51 172X150X38 OD1238 OD1238-48HB TACHOMETER 120x32 362X OD52
Contextual Info: OD1238 Series multifunction technology 120x120x38mm 4.72”x 4.72”x 1.5” RS 6196602: OD1238-48HB01A Tachometer Output-Open Collector Frame PBT, UL94V-0 Thermoplastic Impeller PBT, UL94V-0 Thermoplastic Power Connection 2x lead wires 300mm (12”) or

Contextual Info: ACULED VHL RGYB ACL01-MC-RGYB-E08-C01-L-0000 The new ACULED® VHL Very High Lumen delivers outstanding brightness, improved luminous efficacy and excellent thermal management, all in a compact, easy-to-assemble package. Introduction The ACULED® VHL™ (Very High Lumen)

tb 1225b

Abstract: 1225B
Contextual Info: TLC1205A, TLC1205B, TLC1225A, TLC1225B SELF-CALIBRATING 12-BIT-PLUS-SIGN UNIPOLAR OR BIPOLAR ANALOG-TO-DIGITAL CONVERTERS D2982, FEBRUARY 1 9 8 7 - REVISED AUGUST 1988 » Advanced L in C M O S " Technology TLC 1205 J OR N DUA L-IN LINE PACKAGE ► Self-C alibration Elim inates Expensive

Nippon capacitors

Contextual Info: HB56AW873E-5/6 64MB Buffered FP DRAM DIMM 8-Mword X 72-bit, 4k Refresh, 1 Bank Module 9 pcs of 8M X 8 components HITACHI ADE-203-858 (Z) Preliminary, Rev. 0.0 Nov. 19, 1997 Description The HB56AW 873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

OCV CM 1092

Abstract: SP 1191 MSM6576
Contextual Info: O K I Semiconductor MSM6576-XX_ Operatable at 0.9V and 7-level Detector 4-Bit Microcontroller GENERAL DESCRIPTION M SM 6576 is a 4-bit, low -pow er m icrocontroller that is manufactured in a C M O S silicon-gate process. The m icrocontroller can be started and operated at a low supply voltage of 0.9 V.

Si2333CDS

Abstract: Si2333CDS-T1-GE3
Contextual Info: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition

Diode RL 4B

Abstract: mosfet 0018 Si7868ADP
Contextual Info: Si7868ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 (A)a ID rDS(on) (W) 0.00225 @ VGS = 10 V 40 0.00275 @ VGS = 4.5 V 40 D D D D D Qg (Typ) 46 nC TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized

M52334FP

Contextual Info: MITSUBISHI ICs TV M52334FP PLL-SPLIT VIF/SIF 1C DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M52334FP is IF signal-processing 1C for VCRs and TVs. It enable the PLL detection system despite size as small as that of conventional quasi-synchronous VIF/SIF detector, IF/RF AGC, SIF

Nippon capacitors

Contextual Info: HB56UW873E-5/6 64MB Buffered EDO DRAM DIMM 8-Mword X 72-bit, 4k Refresh, 1 Bank Module 9 pcs of 8M X 8 components HITACHI ADE-203-856 (Z) Preliminary, Rev. 0.0 Nov. 11, 1997 Description The HB56UW 873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

SP232CP

Contextual Info: SIPEX CORP 2SE D • 6263711 Q0ClS2b2 fi ■ S 'p y /v SP230-SP241 SIGNAL PROCESSING EXCELUNCE +5V POWERED RS232 DRIVERS/RECEIVERS FEATURES/BENEFITS DESCRIPTION ■ Operates from Single 5V Power Supply +5V an d +12V - SP231 an d SP239 ■ Meets All RS232C an d V.28 Specifications

Contextual Info: MOTOROLA O rder this docum ent by M M SF10N02Z/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M SF10N 02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel w ith M onolithic Zener ESD Protected G ate EZFETs™ are an advanced series of power MOSFETs which

J441

Abstract: mosfet J442 IRFJ441 IRFJ442 IRFJ440 IRFJ443 MOSFET "CURRENT source" g581 9409A
Contextual Info: HE D I 4Ô55455 □ 0Gcife»04 7 I • ■ Data Sheet No. PD-9.409A INTERNATIONAL R E C T I F I E R T IN T E R N A T I O N A L RECITI FIE R HEXFET TRANSISTORS !I«R IRFJ440 IRFJ441 N-CHANNEL POWER MOSFETs IRFJ442 IRFJ443 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: PSMN6R1-30YLD N-channel 30 V, 6.1 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

BU 3150

Abstract: KS0711 ic chip ic 4410 K 1534 rs 3060 cj sega 315 C0M23 C0M60 C0M44 C0M39
Contextual Info: KS0711 65C O M /132SEG DRIVER & CONTROLLER FO R 4 G /S STN LCD Rev. 077 IN TR O D U C T IO N The KS0711 is a LC D driver LSI fo r liquid crystal dot-m atrix g raphic display system s. It incorporates 198 drive r circu it fo r 132 segm ents, 64 com m ons and a co m m o n to drive icons, 6 5 x 13 2 x 2-bit bit­

AN569

Abstract: MMSF10N02Z MMSF10N02ZR2
Contextual Info: MMSF10N02Z Preferred Device Power MOSFET 10 Amps, 20 Volts N–Channel SO–8 EZFETst are an advanced series of Power MOSFETs which contain monolithic back–to–back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These

CB22/16S

Contextual Info: ñemeo ALUMINUM ELECTROLYTIC SURFACE MOUNT CAPACITORS Type CB +85°C FEATURES • Low cost, high reliability surface mount construction NMCOS006 • Life: 1000 hours at +85°C • Capacitance range: 0.1 iif to 220 ^f • Voltage range: 4 volts to 50 volts

Contextual Info: MC100EP016A 3.3 V ECL 8-Bit Synchronous Binary Up Counter Description The MC100EP016A is a high-speed synchronous, presettable, cascadeable 8-bit binary counter. Architecture and operation are the same as the ECLinPS family MC100E016 with higher operating