TAV 541 Search Results

SAV-541

Abstract: SAV-551 TAV-541 tav 541 SAV-581 US marking TAV-581 TAV-551
Contextual Info: PRODUCT CHANGE NOTICE PCN Form D4-E000-73 PCN#09-020 NOTIFICATION DATE: November 11, 2009 MODEL(S) AFFECTED: SAV-541+, SAV-551+, SAV-581+, TAV-541+, TAV-551+, TAV-581+ EXTENT OF CHANGE: Change of device marking EFFECT OF CHANGE: Model SAV-541+ SAV-551+ SAV-581+

TAV-541

Contextual Info: E-PHEMT TAV-541+ Typical Performance Data IDS mA VDS (V) 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90

TAV-541

Abstract: tav 541
Contextual Info: E-PHEMT TAV-541+ Typical Performance Curves I-V VGS=0.1V PER STEP (2) NOISE FIGURE vs IDS @ 2 GHz (1) 120 0.8 VDS=3V 0.2V 0.7 0.3V IDS (mA) 80 0.4V 60 0.5V 40 NOISE FIGURE (dB) 100 0.6V 20 VDS=4V 0.6 0.5 0.4 0.3 0.2 0.7V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Contextual Info: FIFO RADI Controllei t - ^ ‘läl 5 7 /6 7 4 2 1 9 002901 w Ordering Information Features/ Benefits • High-speed, no fall-through time PACKAGE PART NUMBER PINS TYPE • Control signals for data latching 574219 40 J Mil • Full, Half-Full, Empty, Almost flags for

CF50A

Abstract: CF300 MIL-R-11 100S 200S CFF RESISTORS
Contextual Info: CARBON FILM RESISTORS, 1/8 to 3 WATT RESISTORS MCAPS & COILS MDELAY LINES +.5-41-5 H Industry’s lowest cost and widest selection! H Delivery from stock in bulk or tape/reel H Excellent long-term stability, exceeds MIL-R-11 H Mini 1/4W, 1/2W, 1W models H Standard tolerance: ±5% up to 10M ±2%, ±10% avail.

MC68360

Abstract: arbiter master C6000 SN74CBTD16211 TMS320C6000 TMS320C6202
Contextual Info: Application Report SPRA535 TMS320C6000 Expansion Bus to MC68360 Microprocessor Interface Zoran Nikolic DSP Applications Abstract This application report describes how to interface the Motorola MC68360 quad integrated communications controller QUICC to the expansion bus of the Texas Instruments (TI )

27c301

Abstract: 27C101 nec 27c1000 S631000 S631001 INTEL 27C101 intel 27010 eprom
Contextual Info: HDSSTlb 0013217 3 40E D GOULD INC/ GOULD A M I •> GOULD Aftll* ¡AHI 1MBit 131,072 x 8 Static CMOS Mask ROM Semiconductors S631000/S631001 Features General Description • Fast Access Time: S631000-10/S631001-10—100ns S631000-15/S631001-15—150ns S631000-20/S631001-20—200ns

T130

Abstract: GDGD700 T130N 5x931 heatsink tv 35 5X93
Contextual Info: ELIPEC S2E T 130 N D 34035^7 Typenreihe/Type range T 130 N Elektrische Eigenschaften Electrical properties 400* 600 Höchstzulässige Werte Maximum permissible values V dRM. Vrrm Periodische Vorwärts- und repetitive peak forward off-state 800 Rückwärts-Spitzensperrspannung

pd25a

Abstract: FDMS8460
Contextual Info: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2mΩ Features General Description „ Max rDS on = 2.2mΩ at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has

Contextual Info: FDMS8460 tm Trench N-Channel Power MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has

Contextual Info: ELIPEC T 130 N S2E D 3 4 0 3 5 ^ 7 G D G D 7 0 0 TTb * U P E C Typenreihe/Type range T 130 N Elektrische Eigenschaften Electrical properties 400* 600 Höchstzulässige Werte Maximum permissible values V dRM. Vrrm Periodische Vorwärts- und repetitive peak forward off-state

FDS8638

Abstract: ANS13 5680 so8
Contextual Info: FDS8638 N-Channel PowerTrench MOSFET 40 V, 18 A, 4.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and

217a marking

Contextual Info: FDMS8460 N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

Contextual Info: FDMS8333 N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

Contextual Info: FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

FDMS8460

Contextual Info: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has

Contextual Info: FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 30 A, 12.4 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

Contextual Info: FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

MO-240

Abstract: MO-240 aa
Contextual Info: FDMS86152 N-Channel PowerTrench MOSFET 100 V, 45 A, 6 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

Contextual Info: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd

Contextual Info: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd

90G001

Abstract: omap 4460
Contextual Info: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd

CSD17559Q5

Contextual Info: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd

Contextual Info: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd