TAPE HEAD Search Results

EIA-556

Contextual Info: Packaging of Chip Components Automatic Insertion Packaging TAPE & REEL QUANTITIES All tape and reel specifications are in compliance with RS481. 8mm Paper or Embossed Carrier 12mm 0612, 0508, 0805, 1206, 1210 Embossed Only 1812, 1825 2220, 2225 1808 Paper Only

Contextual Info: 1 3 2 6 5 4 7 8 Global Connector Technology Ltd. - BF030: 2.0mm PITCH PIN HEADER, DUAL ROW, SURFACE MOUNT A A B B C C D D E E Ordering Grid BF030 XX X XX XXXX XXXX XXXX XX Packing Options No. of Contacts SPECIFICATIONS 规格 B = Tape & Reel with Cap Standard

tape head preamp circuit

Abstract: 34R3435 head preamp MR head thin film
Contextual Info: SSI 34R3435 5/12 V 1-Channel BiCMOS Thin Film & MR Tape Drive R/W Device May 1997 DESCRIPTION FEATURES The SSI 34R3435 is a BiCMOS monolithic integrated circuit designed for use with one 2-terminal thin film recording head and one MR sensing element. It provides a low noise read amplifier and write driver for

LA4145

Abstract: N055
Contextual Info: Ordering number: EN1339D Monolithic Linear IC LA4145 0.6 to 0.9 W AF Power Amplifier for Radio Cassette Recorders Features Package Dimensions . The LA4145 is especially suited for use in cassette tape unit : mm . . . . . recorder, radio-cassette, recorder, stereo cassette player

Contextual Info: Ordering number : EN 3 9 7 7 A Monolithic Linear IC LA4166M For Microcassette Players Recording/Playback System Overview The LA4166M is a recording and playback system IC for microcassette and compact cassette tape recorders with a governor circuit for motor control.

OF TL084 OPAMP

Abstract: audio Amp. mosfet 1000 watt 3000 Watt BTL Audio Amplifier AUDIO AMPLIFIER 140 WATT MOSFET 24v 5 amp smps TDA2320A replacement DC MOTOR DRIVE WITH LM324 NE555 IGBT DRIVER TSM1001 lm336 sot23
Contextual Info: Standard linear portfolio From innovative devices to application specific products Package Flip chip DFN8 Mini SO8 SO8 S014/16 SO20 SO24 batwing SOT23-3/5 TO92 TQFP44/48 TSSOP8 TSSOP14/16 TSSOP28 Tape width mm Qty/reel (min.order qty) Lead-free available

AN-994

Abstract: IRFBF20 IRFBF20L IRFBF20S
Contextual Info: PD - 9.1665 IRFBF20S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBF20S Low-profile through-hole (IRFBF20L) Available in Tape & Reel (IRFBF20S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D

KV1330

Abstract: marking code C9 t092 KV1330NT
Contextual Info: KV1330NT VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 3.70 minimum) with Low Series Resistance ■ Two Diodes in a 3 Lead Through-Hole Discrete Package (TO92-3) ■ Very Small Capacitance Deviation at Tape/Reel

UPC2713T-E3

Abstract: UPC2713T
Contextual Info: 1.5 GHz SILICON MMIC UPC2713T WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY FEATURES 35 • FREQUENCY RESPONSE: 1.5 GHz • 5 V SINGLE SUPPLY VOLTAGE • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE Gain, GS dB • INTERNAL CURRENT REGULATION MINIMIZES GAIN

2sb892

Abstract: 2sc4645 2sC4389 2SB1406
Contextual Info: SASYO NMP New MPJTransistor Series * Small-sized package containing the same chip that has been so far placed in * Small-sized package making it possible to make application setssmaller and * Can meet tape-used automatic mounting requirements. * Full line-up of products for wide application.

IRF5820

Abstract: SI3443DV IRF5800 IRF5850
Contextual Info: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

140C

Abstract: 40HF EIA-541 IR140CSP IR140CPS
Contextual Info: Bulletin I0148J rev. B 04/03 IR140CSP FlipkyTM 1 Amp Features z Ultra Low VF per Footprint Area z Low Thermal Resistance One-fifth Footprint of SMA Super Low Profile <.8mm Available Tested on Tape & Reel z z z FlipkyTM Description Major Ratings and Characteristics

KV1812E

Contextual Info: KV1812E VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ Very Small URD Surface Mount Package Very Low Operating Voltage 1 to 8 V Large Capacitance Ratio (A = 7.4) Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel

KV1812K

Abstract: toko product code V toko marking code
Contextual Info: KV1812K VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ Very Small UFD Surface Mount Package Very Low Operating Voltage 1 to 8 V Large Capacitance Ratio (A = 7.4) Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel

SL6140

Abstract: 3 pin diagram 2K variable resistor
Contextual Info: SL6140 SL6140 400MHz Wideband AGC Amplifier DS2159 Issue no 5.0 July 1999 Features Ordering Information ● ● ● ● ● ● SL6140/NA/MP Industrial temperature range miniature plastic package SL6140/NA/MPTC Tape and Reel 400MHz Bandwidth RL=50Ω High voltage Gain 45dB (RL=1kΩ)

Contextual Info: BIPOLAR DIGITAL INTEGRATED CIRCUITS UPB1508GV 3.0 GHz DIVIDE BY 2 PRESCALER FEATURES • HIGH FREQUENCY OPERATION TO 3 GHz • LOW CURRENT CONSUMPTION: 12 mA at 5 V • INTERNAL BLOCK DIAGRAM FIXED DIVIDE RATIO: ÷2 • SMALL PACKAGE: 8 pin SSOP • AVAILABLE IN TAPE AND REEL

IRF7425

Abstract: MS-012AA
Contextual Info: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

10SSR-32H

Abstract: ac ssr SM06B E60389 LR20812 SM11B-SSR-H-TB SM10B-SSR-H-TB
Contextual Info: IDC 1.0mm SSR CONNECTOR Emboss Tape Disconnectable Insulation displacement connectors .039" pitch Features ––––––––––––––––––––––– • Ultra-compact 1.0mm (.039") pitch and only 2.0mm (.079") high and 4.5mm .177") thick.

Contextual Info: PD-96017 IRF7756PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -12V 0.040@VGS = -4.5V 0.058@VGS = -2.5V ±4.3A 0.087@VGS = -1.8V

B11B-ZR-SM3-TF

Abstract: 2B-ZR-SM3-TF S 9B-ZR-SM2-TF transistor ZR B12B-ZR-SM3-TF idc shrouded header S10B-ZR-SM3A-TF S12B-ZR-SM2-TF s-2b E60389
Contextual Info: Crimp 1.5mm ZH CONNECTOR Emboss Tape Disconnectable Crimp style connectors .059" pitch Features ––––––––––––––––––––––– • Compact, low profile design The ZH connector requires only about 45% of the installation

NE32484AS

Abstract: NE32484A NE32484A-SL NE32484A-T1 FET 4812
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE

marking t12 sot-23

Abstract: EIA-541 IRF6100 4.5v to 100v input regulator
Contextual Info: PD - 93930B IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V

mosfet ir 840

Abstract: IRLML6402 irlml6402 equivalent IRLML6402 micro3 IC BA 9 AN-994 g 995
Contextual Info: PD- 93755 IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

Contextual Info: PD-96020 IRF7754PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V