TAIWAN SEMICONDUCTOR 6A Search Results

triac mw 131 600d

Abstract: 65n06
Contextual Info: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717

Contextual Info: TSP12U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement

Contextual Info: TSP12U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement

Contextual Info: TS6B01G thru TS6B07G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Bridge Rectifiers - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength of 2000VRMS - Reliable low cost construction - UL Recognized File # E-326243

HER605G

Contextual Info: HER601G thru HER606G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated High Efficient Rectifiers - Glass passivated chip junction - High efficiency, Low VF - High current capability - High reliability - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: TS6P01G thru TS6P07G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1 A - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

RRCP

Abstract: realtek 1185
Contextual Info: RTL8318P-LF 16-PORT 10/100M/ 1-PORT 10/100/1000M/ 1-PORT MII INTERFACE ETHERNET SWITCH CONTROLLER WITH EMBEDDED MEMORY DATASHEET Rev. 1.2 22 December 2006 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan

RTL8324

Abstract: realtek 1185
Contextual Info: RTL8324 RTL8324-LF 24-PORT 10/100M ETHERNET SWITCH CONTROLLER WITH EMBEDDED MEMORY DATASHEET Rev. 1.3 22 December 2006 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047

Contextual Info: RTL8316BP RTL8316BP-LF 16-PORT 10/100M ETHERNET SWITCH CONTROLLER WITH EMBEDDED MEMORY DATASHEET Rev. 1.2 22 December 2006 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047

RTL8316B

Contextual Info: RTL8316B RTL8316B-LF 16-PORT 10/100M ETHERNET SWITCH CONTROLLER WITH EMBEDDED MEMORY DATASHEET Rev. 1.3 22 December 2006 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047

RTL8324

Contextual Info: RTL8324P RTL8324P-LF 24-PORT 10/100M ETHERNET SWITCH CONTROLLER WITH EMBEDDED MEMORY DATASHEET Rev. 1.2 22 December 2006 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047

BA153G

Abstract: BA157G marking DLA marking L2 Taiwan semiconductor BA159G
Contextual Info: s TAIWAN SEMICONDUCTOR B A 157G - B A 159G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers tò R oHS COM PLIANCE Q-QA1 - 2 3 - •1C7 12.7 ! .OSO 12.0 ! DIA. I.JiZTvtl M IN . Features <v ^ <- <■ <■ G lass pass ivatcd ch i p ju nction. High efficiency, Low VF

em 223

Contextual Info: TAIWAN SEMICONDUCTOR s TSM3441 20V P-Channel MOSFET b RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 654 P in D e fin itio n : 1. Drain 2. Drain 3. G ate V o s V ) 6. Drain 5, Drain 4 . Source R o W rn Q ) b (A ) 90 @ Vos = -4.5V -3.3 1 1 0 @ V gs = -2.5V -2.9

MARKING 358 945A

Abstract: colour code diode zener MARKING 945A zener color codes Zener diode wz 140 colour code zener Zener diode wz 130 MARKING 2S SMA 927a A 928A
Contextual Info: TAIWAN SEMICONDUCTOR % 1S M A 5926 - 1S M A 5956 1.5 Watts Surface Mount Silicon Zener Diode SM A/DO-21 AAC tò RoHS C O M P L IA N C E F e a tu re s III*[f KM IK^-' l!Ki F o r su rfa ce m o u n te d a p p lic a tio n s in o rd e r to o p tim iz e b o a rd space

GL949

Abstract: Ic55A
Contextual Info: CORPORATION GL949 Description ISSUED DATE :2006/11/20 REVISED DATE : PNP SI L I CO N PL AN AR HI G H C URRE NT T RANSI ST O R The GL949 is designed for general purpose switching and amplifier applications. Features 6Amps continuous current, up to 20Amps pulse current

GL9435

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/02/18 REVISED DATE : GL9435 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 50m -6A Description The GL9435 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

GTC9926

Contextual Info: Pb Free Plating Product ISSUED DATE :2004/10/18 REVISED DATE :2006/07/27B GTC9926 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 28m 6A Description The GTC9926 provides the designer with the best combination of fast switching, ruggedized device design,

TSSOP6 package

Abstract: GTT8205S TSSOP-6
Contextual Info: Pb Free Plating Product ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B GTT8205S BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 28m 6A Description The GTT8205S provide the designer with best combination of fast switching, low on-resistance and

G2300

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B G2300 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 20V 28m 6A Description The G2300 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.

GTS9926

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/05/08 REVISED DATE :2006/07/27B GTS9926 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 28m 6A Description The GTS9926 provides the designer with the best combination of fast switching, ruggedized device design,

GSS9926

Contextual Info: Pb Free Plating Product ISSUED DATE :2004/05/27 REVISED DATE :2006/11/15E GSS9926 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 28m 6A Description The GSS9926 provides the designer with the best combination of fast switching, ruggedized device design,

GSC4N01

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/12/19 REVISED DATE : GSC4N01 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 30m 6A Description The GSC4N01 provide the designer with the best combination of fast switching, ruggedized device design, low

GSC9563

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/11/03 REVISED DATE : GSC9563 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -40V 40m -6A Description The GSC9563 provide the designer with the best combination of fast switching, ruggedized device design, low

GSS4924

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/10/31 REVISED DATE : GSS4924 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 35m 6A Description The GSS4924 provide the designer with the best combination of fast switching, ruggedized device design, low